Optoelectronic Semiconductors - Group III-Nitrides

 

Leitung: apl.Prof. Dr. Donat J. As

Universität Paderborn
Fakultät für Naturwissenschaften
Department Physik
Warburger Straße 100
33098 Paderborn
Germany

Tel.: +49 5251 60-5838
Fax: +49 5251 60-5843
E-mail: d.as@uni-paderborn.de

 

Mitglied in:







 

List of Publications:

Journal articles

Publications in 2014:

  • T. Wecker, H. Hörich, M. Feneberg, R. Goldhahn, D. Reuter and  D.J. As:
    Structural and optical properties of MBE grown asymmetric cubic GaN/AlxGa1-xN
    double quantum wells

    phys. stat. sol.
    (b) (2014) (submitted)
  • J.H. Buß. A. Schaefer, T. Schupp, D.J. As, D.J. Hägele, and J. Rudolf:
    High temperature electron spin
    dynamics in bulk cubic GaN: nanosecond spin lifetimes far above room-temperature
    Appl. Phys. Lett. (2014) (submitted)
  • S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
    Excitonic complexes in single Zinc-Blende GaN/AlN Quantum Dots Grown by Droplet Epitaxy
    Appl. Phys. Lett. (2014) (submitted)
  • R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, J. Christen, J.K.N. Lindner and  D.J. As:
    STEM-CL investigations on the influence of stacking faults on the optical propoerties of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
    phys. stat. sol.
    (c) (2014) (submitted)
  • M. Bürger, J.K.N. Lindner, D. Reuter and  D.J. As:
    Investigation of cubic GaN quantum dotrs grown by the Stranski-Krastanaov process
    phys. stat. sol.
    (c) (2014) (submitted)
  • S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
    Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots
    Phys. Rev. B (2014) (submitted)
  • M. Bürger, G. Callson, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, and D.J. As:
    Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks
    phys. stat. sol. (c) 11 (3-4), 790 (2014)
  • A.D. Rodrigues, M.P.F. de Godoy, C. Mietze, and D.J. As:
    Phonon localization in cubic GaN/AlN superlattices
    Solid State Comunications 186, 18 (2014)
  • L. Hiller, T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As and J. Pezoldt:
    Hydrogen Effects in ECR-etching of 3C-SiC(100) Mesa structures
    Materials Science Forum Vols. 778-780, 730 (2014)
  • R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As and J.K.N. Lindner:
    Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)
    phys. stat. sol. (c) 11 (2), 265 (2014)
  • S. Kako, M. Holmes, S. Sergent, M. Bürger, D.J. As, and Y. Arakawa:
    Single-Photon Emission from Cubic GaN Quantum Dots
    Appl. Phys. Lett. 104, 011101 (2014)

Publications in 2013:

Publications in 2012:

Publications in 2011:

 

Publications in 2010:

 

Publications in 2009:

 

Publications in 2008:

 

Publications in 2007:

 

Publications in 2006:

 

Publications in 2005:

 

Publications in 2004:

 

Publications in 2003:

  • D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka:
    Carbon doping of cubic GaN under Ga-rich growth conditions
    phys.stat.sol. (c) 0, 2537 (2003)
  • J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, J.A.N.T. Soares, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, S. Potthast, D.G.P. Salazar: 
    Optical properties on the incorporation of carbon as a dopant in cubic GaN
    Phys.
    Rev. B 68, 155204 (2003)
  • L.K. Teles, L.G. Ferreira, J.R. Leite, L.M.R.Scolfaro, A. Kharchenko, O. Husberg, D.J. As, D. Schikora, K. Lischka: 
    Strain induced ordering in InxGa1-xN alloys
    Appl. Phys. Lett. 82, 4274 (2003)
  • D.J. As, S. Potthast, U. Köhler, A. Khartchenko and K. Lischka:
    Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates
    MRS Symp.
    Proc. Vol. 743 L5.4 (2003)
  • O.C. Noriega, A. Tabata, J.A.N.T. Soares, S.C.P. Rodrigues, J.R. Leite, E. Ribeiro, J.R.L. Fernandez, E.A. Meneses, F. Cerdeira, D.J. As, D. Schikora, and K. Lischka:
    Photoreflectance studies of optical transitions in cubic GaN grown on GaAs (001) substrates
    Journal of Crystal Growth 252, 208 (2003)
  • A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D.J. As, U. Köhler, A. Dadgar, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner:
    Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared spectroscopic ellipsometry
    phys. stat. sol.
    (c), 0 (6),1750 (2003)
  • D.J.As, D. Schikora, K. Lischka: (invited)
    Molecular beam epitaxy of cubic III-nitrides on GaAs substrates
    phys. stat. sol.
    (c), 0 (6), 1607 (2003) (invited)
  • J.R.L. Fernandez, O.C. Noriega, J.A.N.T. Soares, F. Cerdeira, E.A. Meneses, J.R. Leite, D.J. As, D. Schikora, and K. Lischka:
    Near band-edge optical properties of cubic GaN
    Solid State Communications 125, No. 3-4, 205 (2003)
  • D. Schikora, D.J. As, K. Lischka: (invited)
    The molecular beam epitaxy of cubic III-nitrides
    in  "Vacuum Science and Technology: Nitrides as seen by the Technology" edt. T. Paskova and B. Monemar, Research Signpost, Kerala, India, (ISBN: 81-7736-198-8) chapter 15, pp. 315 (2003)
  • D.J.As: (invited)
    Growth and characterization of MBE-grown cubic GaN, InxGa1-xN and AlyGa1-yN
    in “III-Nitride Semiconductor materials: Growth” eds. M.O. Manasreh and I.T. Ferguson, in series “Optoelectronic Properties of Semiconductors and Superlattices“, series editor M.O. Manasreh, (Taylor & Francis, New York), Vol. 19,  chapter 9, pp. 323-450 (2003)
  • O.C. Noriega, J.R. Leite, E.A. Meneses, J.A.N.T. Soares, S.C.P. Rodrigues, L.M.R. Scolfaro,G.M. Sipahi, U. Köhler, D.J. As, S. Potthast, A. Khartchenko, and K. Lischka:
    Photoluminescence and photoreflectance characterization of cubic GaN/AlxGa1-xN quantum wells
    phys. stat. sol.
    (c) 0, (1), 528 (2003)
  • O. Husberg, A. Khartchenko, D.J. As, K. Lischka, E Silveira, O.C. Noriega, J.R.L. Fernandez, and J.R. Leite:
    Thermal annealing of cubic InGaN/GaN double heterostructures
    phys. stat. sol.
    (c) 0, (1), 293 (2003)
  • D.J. As, U. Köhler, S. Potthast, A. Khartchenko, and K. Lischka, V. Potin and D. Gerthsen:
    Cathodoluminescence, high-resolution x-ray diffraction and transmission-electron-microscopy investigations of cubic AlGaN/GaN quantum wells
    phys. stat. sol (c) 0, (1), 253 (2003)

 

Publications in 2002:

  • A. Pawlis, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora
    Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure
    Solid State Communications 123, 235-238 (2002)
    Microelectronics Journal 34, 439 (2003)
  • U. Köhler, D.J. As, S. Potthast, A. Khartchenko, K. Lischka, O.C. Noriega, D.G. Pachenco-Salazar, A. Tabata, S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Siphari, J.R. Leite
    Optical charachterization of cubic AlGaN/GaN quantum wells
    phys. stat. sol.
    (a) 192 (1), 129 (2002)
  • D.J. As: (invited)
    n- and p-type doping of cubic GaN
    Defect and Diffusion Forum Vols. 206-207, 87 (2002)
  • D.J. As, U. Köhler, and K. Lischka
    Optical properties of carbon doped cubic GaN epilayers grown on GaAs (001) substrate
    MRS Symp.
    Proc. Vol. 693, I 2.3 (2002)
  • A. Kasic and M. Schubert, T. Frey, U. Köhler, and D.J. As, C.M. Herzinger
    Transverse optical phonon modes and interband transitions of cubic AlGaN films
    Phys.
    Rev. B 65, 184302 (2002)
  • S.C.P. Rodrigues, G.M. Sipahi, L.M.R. Scolfaro, O.C. Noriega, J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka
    Inter- and intraband transitions in cubic nitride quantum wells
    phys. stat. sol. (a), vol. 190, no. 1, 121-127 (2002)
  • O. Husberg, A. Khartchenko, H. Vogelsang, D.J. As, K. Lischka, O.C. Noriega, A. Tabata, L.M.R. Scolfaro, J.R. Leite
    Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures
    Physica E 13, 1090-1093 (2002)
  • L.K. Teles, J. Furthmüller, L.M.R. Scolfaro, A. Tabata, J.R. Leite, F. Bechstedt, T. Frey, D.J. As, and K. Lischka
    Phase separation and gap bowing in zinc-blende InGaN, InAIN, BGaN, and BAIN alloy layers
    Physica E 13, 1086-1089 (2002)
  • A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Khartchenko, T. Frey, D.J. As, D. Schikora, K. Lischka, J. Furthmüller, and F. Bechstedt
    Phase separation suppression in InGaN epitaxial layers due to biaxial strain
    Appl.
    Phys. Lett. 80, 769 (2002)
  • Yu.A. Pusep, M.T.O. Silva, J.R.L. Fernandez, V.A. Chitta, and J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka
    Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and AlxGa1-xN epitaxial layers J. Appl.
    Phys. 91 (9), 6197 (2002)
  • C. Moysés Araújo, J.R.L. Fernandez, A. Ferreira da Silva, I. Pepe, J.R. Leite, Bo E. Sernelius, A. Tabata, C. Persson, R. Ahuja, D.J. As, D. Schikora, K. Lischka
    Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si
    Microelectronics Journal 33, 365-369 (2002)

 

Publications in 2001:

  • H. Przybylinska, A. Kozanecki, V. Glukhanyak, W. Jantsch, D.J. As, K. Lischka
    Photoluminescence properties of Er doped GaN
    Physica B 308-310, 34 (2001)
  • U. Köhler, M. Lübbers, J. Mimkes, D.J. As
    Properties of carbon as an acceptor in cubic GaN
    Physica B, vol. 308-310, 126 (2001)
  • M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam, C.M. Herzinger
    Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures
    SPIE – Int.Soc.Opt.Eng. Proc. Vol. 4449, p. 58 (2001)
  • M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam
    Infrared ellipsometry - a novel tool for characterization group-III-nitride heterostructures for optoelectronic device applications
    phys. stat. sol.
    (a) 288 (2), 437 (2001)
  • D.J. As, U. Köhler, M. Lübbers, J. Mimkes, and K. Lischka
    P-type doping of cubic GaN by carbon
    phys.stat.sol. (a) 188 (2), 699 (2001)
  • O. Husberg, A. Khartchenko, D.J.As, H. Vogelsang, T. Frey, D. Schikora, and K. Lischka
    Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures
    Appl.
    Phys. Lett. 79 (9), 1243 (2001)
  • D.J. As and U. Köhler
    Carbon - an alternative acceptor for cubic GaN
    J. Phys.: Condensed Matter 13 (40), 8923 (2001)
  • J.R. Fernandez, C. Moysés Araújo, A. Ferreira da Silva, J.R. Leite, Bo E. Sernelius, A. Tabata, E. Abramof, V.A. Chitta, C. Persson, R. Ahuja, I. Pepe, D.J. As, T. Frey, D. Schikora, K. Lischka
    Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems
    J. Crystal Growth 231, 420 (2001)
  • D.J. As, T. Frey, M. Bartels, K. Lischka, R. Goldhahn, S. Shokhovets, A. Tabata, J.R.L. Fernandez, and J.R. Leite
    MBE growth of cubic AlyGa1-yN/GaN heterostructures - structural, vibrational and optical properties
    J. Crystal Growth 230, 421 (2001)
  • M.S. Liu, S. Prawer, L.A. Bursill, R. Brenn, D.J. As
    Characterization of the surface irregularities of cubic GaN using Micro-Raman spectroscopy
    Appl.
    Phys. Lett. 78 (18), 2658 (2001)
  • D.J. As, T. Frey, M. Bartels, A. Khartchenko, D. Schikora, K. Lischka, R. Goldhahn, S. Shokhovets
    Optical properties of MBE grown cubic AlGaN epilayers and AlGaN/GaN quantum well structures
    MRS Symp. Proc. Vol. 639, G 5.9 (2001)
    MRS Internet J. Nitrides Semicond. Res. 6S1, G 5.9 (2001)
  • M.W. Bayerl, M.S. Brandt, T. Graf, O. Ambacher, J.A. Majewski, M. Stutzmann, D.J. As, K. Lischka
    g values of effective mass donors in AlxGa1-xN alloys
    Phys.
    Rev. B 63, 165204 (2001),
  • J.R.L. Fernandez, A. Tabata, V.A. Chitta, D.J. As, T. Frey, O.C. Noriega, M.T.O. Silva, E. Abramof, D. Schikora, K. Lischka, and J.R. Leite
    Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy
    Institute of Pure and Applied Physics (IPAP) CS vol. 1, 664 (2001)
  • T. Frey, D.J. As, M. Bartels, A. Pawlis, and K. Lischka, A. Tabata, J.R.L. Fernandez, M.T.O. Silva, and J.R. Leite, C. Haug, and R. Brenn
    Structural and vibrational properties of MBE grown cubic (Al,Ga)N/GaN heterostructures
    J. Appl.
    Phys. 89 (5), 2631 (2001)

 

Publications in 2000:

  • M. Lisker, H. Witte, A. Krtschil, J. Christen, D.J. As, B. Schöttker, and K. Lischka
    Enhancement of UV-sensitivity in GaN/GaAs heterostructures by Si-doping
    Material Science Forum 338-342, 1591 (2000)
  • V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, D.J. As, D. Schikora, and K. Lischka
    Resonant Raman scattering and the emission process in zincblende InxGa1-xN
    Materials Science Forum 338-342, 1595 (2000)
  • D.J. As, R. Richter, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, K. Lischka
    Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si
    MRS Internet J N S R 5: U264-U269, Suppl.
    1, 2000
  • J.R.L. Fernandez, V.A. Chitta, E. Abramof et al.
    Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature
    MRS Internet J N S R 5: U191-U196, Suppl.
    1, 2000
  • D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka
    Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates
    phys. stat. sol.
    (a) 180, 369 (2000)
  • J.-C. Holst, A. Hoffmann, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, and K. Lischka
    The origin of optical gain in cubic In,GaN grown by molecular beam epitaxy
    Appl.
    Phys. Lett. 76, 2832 (2000)
  • G. Kaczmarczyk, A. Kaschner, S. Reich, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert, A. Hoffmann, and C. Thomsen
    Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations
    Appl.
    Phys. Lett. 76, 2122 (2000)
  • V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, L.M.R. Scolfaro, T. Frey, D.J. As, D. Schikora, and K. Lischka
    Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering
    Phys.
    Rev. Lett 84, 3666 (2000)
  • D.J. As, T. Frey, D. Schikora, and K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt
    Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si (001) substrates
    Appl.
    Phys. Lett. 76, 1686 (2000)
  • R. Brenn, D.N. Jamieson, A. Cimmino, K.K. Lee, T. Frey, D.J. As, S. Prawer
    Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM
    Nuclear Instruments and Methods in Physics B 161, 435 (2000)
  • C. Wang, D.J.As, B. Buda, M. Lübbers, D. Schikora, J. Mimkes, and K. Lischka
    Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction
    J. Appl.
    Phys. 87, 3823 (2000)
  • R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D.J. As, and K. Lischka
    Refractive index and gap energy of cubic InxGa1-xN
    Appl.
    Phys. Lett. 76, 291 (2000)
  • D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka
    Electroluminescence of a cubic GaN/GaAs (001) p-n junction
    Appl.
    Phys. Lett. 76, 13 (2000)
  • D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg
    Investigations of the Stranski-Krastanov growth of CdSe quantum dots
    Appl. Phys. Lett. 76, 418 (2000)

 

Publications in 1999:

  • E. Silveira, A. Tabata, J.R. Leite, R. Trentin, V. Lemos, T. Frey, D.J. As, D. Schikora, K. Lischka
    Evidence of phase separation cubic InxGa1-xN epitaxial layers by resonant Raman scattering
    Appl.
    Phys. Lett. 75, 3602 (1999)
  • L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A. Tabate, J.L.P. Castineira, and D.J. As
    Relaxation effects on the negatively charged Mg impurity in zincblende GaN
    phys. stat. sol.
    (b) 216, 541 (1999)
  • D.J. As and K. Lischka (invited paper)
    Heteroepitaxy of doped and undoped cubic group III-nitrides
    phys. stat. sol.
    (a) 176, 475 (1999)
  • T. Frey, D.J. As, D. Schikora, K. Lischka, J. Holst, A. Hoffmann
    Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures
    phys. stat. sol.
    (b) 216, 259 (1999)
  • R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. As, and K. Lischka
    Determination of optical constants for cubic InxGa1-xN
    phys. stat. sol.
    (b) 216, 265 (1999)
  • J. Holst, A. Hoffmann, I. Broser, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, K. Lischka
    The influence of structural properties on the mechanisms of optical amplification in cubic GaInN
    phys. stat. sol.
    (b) 216, 471 (1999)
  • A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora, and K. Lischka
    Raman scattering study of zinc blende InxGa1-xN alloys
    phys. stat. sol.
    (b) 216, 769 (1999)
  • J. Portmann, C. Haug, R. Brenn, T. Frey, B. Schöttker, D.J. As
    Ion-channeling studies of cubic GaN and InxGa1-xN on GaAs substrates
    Nuclear Instruments and Methods in Physics Research B 155, 489 (1999)
  • A. Tabata, J.R. Leite, A.P. Lima, E. Silveira, V. Lemos, T. Frey, D.J. As., D. Schikora, and K. Lischka
    Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
    Appl.
    Phys. Lett. 75 (8), 1095 (1999)
  • R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, B. Schöttker, T. Frey , D.J. As, D. Schikora, K. Lischka
    Time Resolved Photoluminescence of Cubic Mg Doped GaN
    MRS Proc. Vol. 572, 225 (1999)
  • A. Tabata, A.P. Lima, J.R. Leite, V. Lemos, D. Schikora, B. Schöttker, U. Köhler, D.J. As, and K. Lischka
    Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrates
    Semicond.
    Sci. Technol. 14 (1999) 318-322
  • M. Lisker, A. Krtschil, H. Witte, J. Christen, D.J. As, B. Schöttker, and K. Lischka
    Electrical and photoelectrical characterization of deep defects in cubic GaN on GaAs
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998
    MRS Internet J. Nitride Semicond.
    Res. 4S1, U190-U195, G2.3 (1999)
  • J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D.J. As, D. Schikora, K. Lischka
    Mechanisms of Optical Gain in Cubic GaN and InGaN
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998
    MRS Internet J. Nitride Semicond.
    Res. 4S1, U80-U85, G3.14 (1999)
  • D.J. As, T. Simonsmeier, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, and K. Lischka
    P- and n-type doping of MBE grown cubic GaN/GaAs epilayers
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, December 1998
    MRS Internet J. Nitride Semicond.
    Res. 4S1, U238-U243, G3.24 (1999)
  • J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka
    Optical gain and stimulated emission of cleaved cubic gallium nitrite
    Appl.
    Phys. Lett. 74, 1966 (1999)
  • R. Pässler, E. Griebl, H. Riepl, G. Lautner, S. Bauer, H. Preis, W. Gebhardt, B. Buda, D.J. As, D. Schikora, K. Lischka, K. Papagelis, and S. Ves
    Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films
    J. Appl. Phys. 86, 4403 (1999)
  • A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schöttker, T. Frey, D.J. As, and K. Lischka
    Growth of cubic InN on InAs (001) by plasma assisted molecular beam epitaxy
    J. Crystal Growth 201/202, 396 (1999)
  • Z.X. Liu, A.R. Goñi, K. Syassen, H. Siegle, C. Thomsen, B. Schöttker, D.J. As, and D. Schikora
    Pressure and temperature effects on optical transitions in cubic GaN
    J. Appl.
    Phys. 86 (2), 929 (1999)
  • C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka
    Cathodoluminescence of homogeneous cubic GaN/GaAs (001) layers
    Semicond.
    Sci. Techn. 14, 161 (1999)
  • U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn
    Optical constants of cubic GaN in the energy range of 1.5 to 3.7 eV
    J. Appl.
    Phys. 85, 404 (1999)
  • A.P. Lima, T. Frey, U. Köhler, C. Wang, D.J. As, K. Lischka, D. Schikora
    Surface irregularities of MBE grown cubic GaN layers
    J. Crystal Growth 197, 31 (1999)

 

Publications in 1998:

  • N. Puhlmann, I. Stolpe, H.U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, and K. Lischka:
    Megagauss cyclotron resonance in cubic GaN layers
    Proc. 24rd Int.
    Conf. on Physics of Semicond., Jerusalem, August 1998 (invited paper), ed. D. Gershoni, World Scientifique, Singapore 1998
  • N. Puhlmann, I. Stolpe, H.-U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, K. Lischka:
    Magneto-optical investigations on cubic GaN in high magnetic fields
    Physica B 256-258, 659 (1998)
  • D.J. As (invited paper):
    Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers
    phys. stat. sol.
    (b) 210, 445 (1998)
  • D.J. As (invited paper):
    Defect Related Optical and Electrical Properties of MBE Grown Cubic GaN Epilayers
    Radiation Effects and Defects in Solids 146, 145 (1998)
  • D.J. As, T. Simonsmeier, B. Schöttker, T. Frey, and D. Schikora:
    Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
    Appl.
    Phys. Lett. 73, 1835-1837 (1998)
  • I. Loa, S. Gronemeyer, C. Thomsen, O. Ambacher, D. Schikora, and D.J. As:
    Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN
    J. Raman Spectroscopy 29, 291-295 (1998)
  • B. Buda, C. Wang, W. Wrede, O. Leifeld, D.J. As, D. Schikora, and K. Lischka:
    The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence
    Semicond.
    Sci. Technol. 13, 921-926 (1998)
  • J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, and K. Lischka:
    Mechanisms of optical gain in cubic gallium nitrite
    Appl.
    Phys. Lett. 72, 1439 (1998)
  • D.J. As, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
    Depth resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers
    MRS Proc. Vol. 482, 661 (1998)
  • C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka:
    Cathodoluminescence of Cubic GaN Epilayers
    Materials Science Forum Vols. 264-268 (1998) pp. 1339-1342
  • B. Schöttker, J. Kühler, D.J. As, D. Schikora, and K. Lischka
    An Accurate Method to Determine the Growth Conditions During Molecular Beam Epitaxy of Cubic GaN
    Materials Science Forum Vols. 264-268 (1998) pp. 1173-1176
  • D.J. As, C. Wang, B. Schöttker, D. Schikora, K. Lischka:
    Depth-resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers
    Mat. Res. Soc.
    Symp. Proc. Vol. 482, pp. 661-666 (1998)

 

Publications in 1997: 

  • H. Siegle, A.R. Goni, C. Thomsen, C. Ulrich, K. Syassen, B. Schöttker, D.J. As, D. Schikora:
    High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
    Mat. Res. Soc.
    Symp. Proc. Vol. 468, pp. 225-230 (1997)
  • D.J.As, A.Greiner, M.Lübbers, J.Mimkes, M.Hankeln, K.Lischka, D.Schikora:
    Hall-effect measurements on stoichiometrically grown cubic GaN epilayers on GaAs substrates
    Proc. 23th Int.Conf.on the Physics of Semiconductors, Berlin, Germany 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific Publ.
    Singapore,1997), vol. 1, p. 509
  • D.J.As, A.Rüther, M.Lübbers, J.Mimkes, K.Lischka, D.Schikora:
    P-type conductivity with a high hole mobility in cubic GaN/GaAs epilayers
    Mat. Res. Soc.
    Symp. Proc. No. 449,  pp. 615-620 (1997)
  • D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
    The near band edge photoluminescence of cubic GaN epilayers
    Appl.
    Phys. Lett. 70, 1311-1313 (1997)
  • D.Schikora, B. Schöttker, D.J. As, K.Lischka:
    Epitaxial growth and properties of cubic group III-nitride layers
    SPIE-Int.
    Soc. Opt. Eng. Proc. Vol. 2994, 60 (1997)

 

Publications in 1996:

  • D.J. As, D.Schikora, A.Greiner, M.Lübbers, J.Mimkes, K.Lischka:
    P- and n-type cubic GaN epilayers on GaAs
    Phys. Rev. B 54, R11118 (1996)
  • B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora, K. Lischka:
    Initial roughness and relaxation behaviour of MBE grown ZnSe/GaAs
    Acta physica polonica A 90, 997 (1996)
  • D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, F. Henneberger:
    Epitaxial growth and optical transitions of cubic GaN films
    Phys.
    Rev. B 54, R8381 (1996)

 

Publications in 1994:

  • K. Weich, J. Hörer, E. Patzak, D.J. As, R. Eggemann, M. Möhrle:
    Injection locked laser as wavelength converter and optical regenerator up to 10 Gbit/s
    Conf.Dig.ECOC 94, Vol.2, WeB2.2, 643 (1994)
  • U. Feiste, D.J. As, A. Ehrhardt, M. Möhrle, D. Franke:
    Investigations on the stability of an all-optically extracted clock at 18 GHz using a selfpulsating DFB-laser
    Conf.Dig.ECOC 94, Vol.1, TuP.29, 487 (1994)
  • K. Weich, R. Eggemann, J. Hörer, D.J. As, M. Möhrle, E. Patzak:
    10 Gbit/s all-optical decision with two section semiconductor lasers
    Electronics Letters 30, 784 (1994)
  • K. Weich, E. Patzak, J. Hörer, D.J. As, R. Eggemann, M. Möhrle:
    5 Gbit/s optical switching betweeen two injection locked modes of a semiconductor laser
    Tech.Dig.CLEO 94, Vol.8, CTuT4, 170 (1994)
  • K. Weich, J. Hörer, D.J. As, R. Eggemann, M. Möhrle, E. Patzak:
    2.5 Gbit all-optical clocked decision and retiming circuit using bistable semiconductor lasers
    Tech.Dig.OFC 94, Vol.4, WB5, 79 (1994)
  • U. Feiste, D.J. As, A. Ehrhardt:
    18 GHz all-optical frequency locking and clock recovery using a selfpulsating two-section DFB-laser
    Photonics Technology Letters 6, 106 (1994)

 

Publications in 1993:

  • A.Ehrhardt, D.J. As, U. Feiste:
    All optical clock extraction at 18 GHz by a selfpulsating two-section DFB-laser
    Conf.Dig.ECOC 93, Vol.3, ThP12.9, 85 (1993)
  • B. Sartorius, M. Möhrle, D.J. As, J. Hörer, H. Venghaus, U. Feiste:
    High frequency locking at 18 GHz in a selfpulsating DFB laser
    Conf.Dig.ECOC 93, Vol.2, WeP8.2, 365 (1993)
  • G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler, D.J.As:
    Enhancement of the in-plane effective mass of electrons in modulation doped InGaAs quantum wells due to confinement effects
    Phys.Rev.B 48, 2328 (1993)
  • D.J. As, R.Eggemann, U. Feiste, M. Möhrle, E. Patzak, K. Weich:
    Clock recovery based on a new type of selfpulstion in a 1.5 µm two-section InGaAsP-InP DFB laser
    Electronics Letters 29, 141 (1993)
  • M. Maier, K. Köhler, A. Höpner, D.J. As:
    Composition analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by deterimination of film thickness
    J. Appl.
    Phys. 73, 3820 (1993)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
    High resolution carrier temperature and lifetime topography of semiinsulating LEC GaAs using spatially and spectrally resolved photoluminescence
    J. Appl.
    Phys. 73, 1430 (1993)

 

Publications in 1992:

  • J.D. Ralston, I. Esquivias, S. Weiser, D.F.G. Gallagher, P.J. Tasker, E.C. Larkins, J. Rosenzweig, H.P. Zappe, J. Fleissner, D.J. As:
    16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure
    SPIE Vol. 1680 High-Speed Electronics and Optoelectronics, 127 (1992)
  • Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz:
    Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
    Appl.
    Phys. Lett. 60, 1609 (1992)
  • K. Hingerl, W. Jantsch, P. Juza, M. Lang, H. Sitter, J. Lilja, M. Pessa, D.J. As, W. Rothemund:
    Determination of acceptor binding energies in ZnSe
    J. Crystal Growth 117, 341 (1992)
  • M. Maier, D.J. As, K. Köhler, A. Höpner:
    Composition analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
    in "Secondary Ion Mass Spectroscopy SIMS VIII", edited by A. Benninghoven, K.T.F. Jansen, J. Tümpner, H.W. Werner (J. Wiley & Sons, Chichester, 1992), p.873
  • D.J.As, S. Korf, Z.M. Wang, J. Windscheif, K.H. Bachem, W. Jantz:
    Low temperature photoluminescence topography of MOCVD grown InGaP, AlGaAs, and AlGaAs/GaAs single quantum wells
    Semiconductor Sci.
    Technol. 7, A27 (1992)
  • Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz:
    Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
    Appl.
    Phys. Lett. 60, 1609 (1992)

 

Publications in 1991:

  • H.P. Zappe, D.J. As:
    Carrier transport in HEMTs analyzed by high-field electroluminescence
    IEEE Electron Device Letters 12, 590 (1991)
  • H.P. Zappe, D.J. As:
    Spectrum of hot-electron luminescence from high electron mobility transistors
    Appl.
    Phys. Lett. 59, 2257 (1991)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
    Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers
    Appl.
    Surf. Sci. 50, 228 (1991)
  • J.D. Ralston, M. Ramsteiner, B. Dischler, M. Maier, G. Brandt, P. Koidl, D.J. As:
    Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum well structures
    J. Appl.
    Phys. 70, 2195 (1991)
  • K. Hingerl, W. Jantsch, P. Juza, H. Sitter, D.J. As, W. Rothemund:
    Characterization of MBE grown ZnSe epilayers doped with Arsenic
    Crystal Properties and Preparation 32-34, 276 (1991)

 

Publications in 1990:

  • K. Hingerl, J. Lilja, M. Toivonen, W. Jantsch, D.J. As, W. Rothemund, P. Juza, H. Sitter:
    Electrical and optical properties of As and Li doped ZnSe films
    SPIE Proceedings Vol. 1361, 943 (1990)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
    Electron temperature and lifetime mapping of photoexcited carriers in semi-insulating LEC GaAs substrates by photoluminescence
    Inst.
    Phys. Conf. Ser. No. 112, 190 (1990)
  • T. Schweizer, K. Köhler, P. Ganser, D.J. As, K.H. Bachem:
    Investigation of the interface quality of GaAs/AlGaAs heterostructures
    Superlattices and Microstructures 8, 179 (1990)
  • H.P. Zappe, D.J. As:
    Mechanisms for the emission of visible light from GaAs field-effect transistors
    Appl.
    Phys. Lett. 57, 2919 (1990)
  • K. Hingerl, H. Sitter, D.J. As, W. Rothemund:
    Growth and Characterization of ZnSe grown on GaAs by Hot-Wall-Epitaxy
    J. Crystal Growth 101, 180 (1990)
  • D.J. As, Th. Frey, W. Jantz, G. Kaufel, K. Köhler, W. Rothemund, T. Schweizer, H.P. Zappe:
    Influences of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructrures
    J. Electr.
    Mat. 19, 747 (1990)

 

Publications in 1988:

  • D.J. As, P.W. Epperlein, P.W. Mooney:
    Deep electron traps in GaAs/n-AlGaAs single quantum wells 
    J. Appl.
    Phys. 64, 2408 (1988)
  • D.J. As, P.W. Epperlein, P.W. Mooney:
    DLTS measurements on MBE-grown narrow GaAs/-AlGaAs single quantum wells 
    Inst.
    Phys. Conf. Ser. No. 91, 561 (1988)

 

Publications in 1987:

  • D.J. As, L. Palmetshofer:
    Laser beam heating and high temperature luminescence of CdTe
    J. Appl.
    Phys. 62, 369 (1987)
  • D.J. As, J.M. Langer:
    Energy gap and the joint density of states temperature dependence in CdTe
    Acta Physica Polonica A 71, 149 (1987)
  • D.J. As, L. Palmetshofer, J.M. Langer:
    Laser annealing and photo-induced sublimation in compound semiconductors
    Acta Physica Polonica A 71, 363 (1987)

 

Publications in 1985:

  • D.J. As, L. Palmetshofer:
    Laser annealing of defects in CdTe epitaxial layers
    J. Crystal Growth 72, 246 (1985)
  • J. Schuller, D.J. As, W. Faschinger, K. Lischka, L. Palmetshofer, H. Sitter, W. Jantsch:
    Thermal and laser annealing of intrinsic defects in CdTe epilayers
    In Proc. 13th Int. Conf. on Defects in Semiconductors, L.C. Kimmerling and J.M. Parsey eds., Metallurgical Soc. of AIME (1985), p. 553

 

Publications in 1984:

  • D.J. As, L. Palmetshofer, J. Schuller, K. Lischka:
    CW-laser annealing of CdTe epitaxial layers
    in: Laser Processing and Diagnostics, ed.
    D. Bäuerle, Springer Ser. Chem. Phys. 39, 64 (1984)

 

Nonscientific papers:

  •  D.J. As:
    International Workshop on Nitride Semiconductors (IWN-2002) in Aachen, Germany, 22-25 July 2002
    phys. stat. sol.
    (b) 233, 555 (2002)

 

 

 

 

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