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Publikationen

List of Publications:

Journal articles

recent publications:

  • T. Cerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov, M. Bayer:
    Picosecond acoustics experiments with cubic GaN/AlGaN single quantum wells
    Appl. Phys. Lett. (2016) submitted
  • J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele and J. Rudolph:
    Electron spin dynamics in bulk cubic GaN
    Phys. Rev. B (2016) submitted

Publikationen

2016
2015
2014
2013
2012
2011
2010
2009 and earlier publications

Publications in 2009: 

 

Publications in 2008: 

 

Publications in 2007: 

 

Publications in 2006: 

 

Publications in 2005:

 

Publications in 2004:

 

Publications in 2003:

  • D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka: 
    Carbon doping of cubic GaN under Ga-rich growth conditions
    phys.stat.sol. (c) 0, 2537 (2003)
  • J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, J.A.N.T. Soares, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, S. Potthast, D.G.P. Salazar:  
    Optical properties on the incorporation of carbon as a dopant in cubic GaN 
    Phys. Rev. B 68, 155204 (2003)
  • L.K. Teles, L.G. Ferreira, J.R. Leite, L.M.R.Scolfaro, A. Kharchenko, O. Husberg, D.J. As, D. Schikora, K. Lischka:  
    Strain induced ordering in InxGa1-xN alloys 
    Appl. Phys. Lett. 82, 4274 (2003)
  • D.J. As, S. Potthast, U. Köhler, A. Khartchenko and K. Lischka:
    Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates 
    MRS Symp. Proc. Vol. 743 L5.4 (2003) 
  • O.C. Noriega, A. Tabata, J.A.N.T. Soares, S.C.P. Rodrigues, J.R. Leite, E. Ribeiro, J.R.L. Fernandez, E.A. Meneses, F. Cerdeira, D.J. As, D. Schikora, and K. Lischka: 
    Photoreflectance studies of optical transitions in cubic GaN grown on GaAs (001) substrates 
    Journal of Crystal Growth 252, 208 (2003)
  • A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D.J. As, U. Köhler, A. Dadgar, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner:
    Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared spectroscopic ellipsometry 
    phys. stat. sol. (c), (6),1750 (2003)
  • D.J.As, D. Schikora, K. Lischka: (invited) 
    Molecular beam epitaxy of cubic III-nitrides on GaAs substrates 
    phys. stat. sol. (c), 0 (6), 1607 (2003) (invited)
  • J.R.L. Fernandez, O.C. Noriega, J.A.N.T. Soares, F. Cerdeira, E.A. Meneses, J.R. Leite, D.J. As, D. Schikora, and K. Lischka:
    Near band-edge optical properties of cubic GaN 
    Solid State Communications 125, No. 3-4, 205 (2003)
  • D. Schikora, D.J. As, K. Lischka: (invited)
    The molecular beam epitaxy of cubic III-nitrides 
    in  "Vacuum Science and Technology: Nitrides as seen by the Technology" edt. T. Paskova and B. Monemar, Research Signpost, Kerala, India, (ISBN: 81-7736-198-8) chapter 15, pp. 315 (2003)
  • D.J.As: (invited)
    Growth and characterization of MBE-grown cubic GaN, InxGa1-xN and AlyGa1-yN 
    in “III-Nitride Semiconductor materials: Growth” eds. M.O. Manasreh and I.T. Ferguson, in series “Optoelectronic Properties of Semiconductors and Superlattices“, series editor M.O. Manasreh, (Taylor & Francis, New York), Vol. 19,  chapter 9, pp. 323-450 (2003)
  • O.C. Noriega, J.R. Leite, E.A. Meneses, J.A.N.T. Soares, S.C.P. Rodrigues, L.M.R. Scolfaro,G.M. Sipahi, U. Köhler, D.J. As, S. Potthast, A. Khartchenko, and K. Lischka:
    Photoluminescence and photoreflectance characterization of cubic GaN/AlxGa1-xN quantum wells 
    phys. stat. sol. (c) 0, (1), 528 (2003)
  • O. Husberg, A. Khartchenko, D.J. As, K. Lischka, E Silveira, O.C. Noriega, J.R.L. Fernandez, and J.R. Leite: 
    Thermal annealing of cubic InGaN/GaN double heterostructures 
    phys. stat. sol. (c) 0, (1), 293 (2003)
  • D.J. As, U. Köhler, S. Potthast, A. Khartchenko, and K. Lischka, V. Potin and D. Gerthsen: 
    Cathodoluminescence, high-resolution x-ray diffraction and transmission-electron-microscopy investigations of cubic AlGaN/GaN quantum wells 
    phys. stat. sol (c) 0, (1), 253 (2003)

 

Publications in 2002:

  • A. Pawlis, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora 
    Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure 
    Solid State Communications 123, 235-238 (2002) 
    Microelectronics Journal 34, 439 (2003)
  • U. Köhler, D.J. As, S. Potthast, A. Khartchenko, K. Lischka, O.C. Noriega, D.G. Pachenco-Salazar, A. Tabata, S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Siphari, J.R. Leite 
    Optical charachterization of cubic AlGaN/GaN quantum wells
    phys. stat. sol. (a) 192 (1), 129 (2002)
  • D.J. As: (invited)
    n- and p-type doping of cubic GaN 
    Defect and Diffusion Forum Vols. 206-207, 87 (2002)
  • D.J. As, U. Köhler, and K. Lischka 
    Optical properties of carbon doped cubic GaN epilayers grown on GaAs (001) substrate 
    MRS Symp. Proc. Vol. 693, I 2.3 (2002) 
  • A. Kasic and M. Schubert, T. Frey, U. Köhler, and D.J. As, C.M. Herzinger 
    Transverse optical phonon modes and interband transitions of cubic AlGaN films 
    Phys. Rev. B 65, 184302 (2002)
  • S.C.P. Rodrigues, G.M. Sipahi, L.M.R. Scolfaro, O.C. Noriega, J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    Inter- and intraband transitions in cubic nitride quantum wells 
    phys. stat. sol. (a), vol. 190, no. 1, 121-127 (2002) 
  • O. Husberg, A. Khartchenko, H. Vogelsang, D.J. As, K. Lischka, O.C. Noriega, A. Tabata, L.M.R. Scolfaro, J.R. Leite 
    Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures 
    Physica E 13, 1090-1093 (2002) 
  • L.K. Teles, J. Furthmüller, L.M.R. Scolfaro, A. Tabata, J.R. Leite, F. Bechstedt, T. Frey, D.J. As, and K. Lischka 
    Phase separation and gap bowing in zinc-blende InGaN, InAIN, BGaN, and BAIN alloy layers 
    Physica E 13, 1086-1089 (2002)
  • A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Khartchenko, T. Frey, D.J. As, D. Schikora, K. Lischka, J. Furthmüller, and F. Bechstedt 
    Phase separation suppression in InGaN epitaxial layers due to biaxial strain 
    Appl. Phys. Lett. 80, 769 (2002) 
  • Yu.A. Pusep, M.T.O. Silva, J.R.L. Fernandez, V.A. Chitta, and J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and AlxGa1-xN epitaxial layers J. Appl. Phys. 91 (9), 6197 (2002)
  • C. Moysés Araújo, J.R.L. Fernandez, A. Ferreira da Silva, I. Pepe, J.R. Leite, Bo E. Sernelius, A. Tabata, C. Persson, R. Ahuja, D.J. As, D. Schikora, K. Lischka 
    Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si 
    Microelectronics Journal 33, 365-369 (2002) 

 

Publications in 2001:

  • H. Przybylinska, A. Kozanecki, V. Glukhanyak, W. Jantsch, D.J. As, K. Lischka
    Photoluminescence properties of Er doped GaN 
    Physica B 308-310, 34 (2001) 
  • U. Köhler, M. Lübbers, J. Mimkes, D.J. As 
    Properties of carbon as an acceptor in cubic GaN 
    Physica B, vol. 308-310, 126 (2001)
  • M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam, C.M. Herzinger 
    Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures 
    SPIE – Int.Soc.Opt.Eng. Proc. Vol. 4449, p. 58 (2001)
  • M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam 
    Infrared ellipsometry - a novel tool for characterization group-III-nitride heterostructures for optoelectronic device applications 
    phys. stat. sol. (a) 288 (2), 437 (2001) 
  • D.J. As, U. Köhler, M. Lübbers, J. Mimkes, and K. Lischka 
    P-type doping of cubic GaN by carbon 
    phys.stat.sol. (a) 188 (2), 699 (2001)
  • O. Husberg, A. Khartchenko, D.J.As, H. Vogelsang, T. Frey, D. Schikora, and K. Lischka 
    Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures 
    Appl. Phys. Lett. 79 (9), 1243 (2001)
  • D.J. As and U. Köhler 
    Carbon - an alternative acceptor for cubic GaN 
    J. Phys.: Condensed Matter 13 (40), 8923 (2001)
  • J.R. Fernandez, C. Moysés Araújo, A. Ferreira da Silva, J.R. Leite, Bo E. Sernelius, A. Tabata, E. Abramof, V.A. Chitta, C. Persson, R. Ahuja, I. Pepe, D.J. As, T. Frey, D. Schikora, K. Lischka 
    Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems 
    J. Crystal Growth 231, 420 (2001)
  • D.J. As, T. Frey, M. Bartels, K. Lischka, R. Goldhahn, S. Shokhovets, A. Tabata, J.R.L. Fernandez, and J.R. Leite 
    MBE growth of cubic AlyGa1-yN/GaN heterostructures - structural, vibrational and optical properties 
    J. Crystal Growth 230, 421 (2001)
  • M.S. Liu, S. Prawer, L.A. Bursill, R. Brenn, D.J. As 
    Characterization of the surface irregularities of cubic GaN using Micro-Raman spectroscopy 
    Appl. Phys. Lett. 78 (18), 2658 (2001)
  • D.J. As, T. Frey, M. Bartels, A. Khartchenko, D. Schikora, K. Lischka, R. Goldhahn, S. Shokhovets 
    Optical properties of MBE grown cubic AlGaN epilayers and AlGaN/GaN quantum well structures 
    MRS Symp. Proc. Vol. 639, G 5.9 (2001) 
    MRS Internet J. Nitrides Semicond. Res. 6S1, G 5.9 (2001)
  • M.W. Bayerl, M.S. Brandt, T. Graf, O. Ambacher, J.A. Majewski, M. Stutzmann, D.J. As, K. Lischka 
    g values of effective mass donors in AlxGa1-xN alloys 
    Phys. Rev. B 63, 165204 (2001), 
  • J.R.L. Fernandez, A. Tabata, V.A. Chitta, D.J. As, T. Frey, O.C. Noriega, M.T.O. Silva, E. Abramof, D. Schikora, K. Lischka, and J.R. Leite 
    Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy 
    Institute of Pure and Applied Physics (IPAP) CS vol. 1, 664 (2001)
  • T. Frey, D.J. As, M. Bartels, A. Pawlis, and K. Lischka, A. Tabata, J.R.L. Fernandez, M.T.O. Silva, and J.R. Leite, C. Haug, and R. Brenn 
    Structural and vibrational properties of MBE grown cubic (Al,Ga)N/GaN heterostructures 
    J. Appl. Phys. 89 (5), 2631 (2001)

 

Publications in 2000:

  • M. Lisker, H. Witte, A. Krtschil, J. Christen, D.J. As, B. Schöttker, and K. Lischka 
    Enhancement of UV-sensitivity in GaN/GaAs heterostructures by Si-doping 
    Material Science Forum 338-342, 1591 (2000)
  • V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    Resonant Raman scattering and the emission process in zincblende InxGa1-xN 
    Materials Science Forum 338-342, 1595 (2000) 
  • D.J. As, R. Richter, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, K. Lischka 
    Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si 
    MRS Internet J N S R 5: U264-U269, Suppl. 1, 2000
  • J.R.L. Fernandez, V.A. Chitta, E. Abramof et al. 
    Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature 
    MRS Internet J N S R 5: U191-U196, Suppl. 1, 2000
  • D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka 
    Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates 
    phys. stat. sol. (a) 180, 369 (2000)
  • J.-C. Holst, A. Hoffmann, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    The origin of optical gain in cubic In,GaN grown by molecular beam epitaxy 
    Appl. Phys. Lett. 76, 2832 (2000)
  • G. Kaczmarczyk, A. Kaschner, S. Reich, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert, A. Hoffmann, and C. Thomsen 
    Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations 
    Appl. Phys. Lett. 76, 2122 (2000)
  • V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, L.M.R. Scolfaro, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering 
    Phys. Rev. Lett 84, 3666 (2000)
  • D.J. As, T. Frey, D. Schikora, and K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt 
    Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si (001) substrates 
    Appl. Phys. Lett. 76, 1686 (2000)
  • R. Brenn, D.N. Jamieson, A. Cimmino, K.K. Lee, T. Frey, D.J. As, S. Prawer 
    Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM 
    Nuclear Instruments and Methods in Physics B 161, 435 (2000)
  • C. Wang, D.J.As, B. Buda, M. Lübbers, D. Schikora, J. Mimkes, and K. Lischka 
    Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction 
    J. Appl. Phys. 87, 3823 (2000)
  • R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D.J. As, and K. Lischka 
    Refractive index and gap energy of cubic InxGa1-x
    Appl. Phys. Lett. 76, 291 (2000)
  • D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka 
    Electroluminescence of a cubic GaN/GaAs (001) p-n junction 
    Appl. Phys. Lett. 76, 13 (2000)
  • D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg 
    Investigations of the Stranski-Krastanov growth of CdSe quantum dots 
    Appl. Phys. Lett. 76, 418 (2000)

 

Publications in 1999:

  • E. Silveira, A. Tabata, J.R. Leite, R. Trentin, V. Lemos, T. Frey, D.J. As, D. Schikora, K. Lischka
    Evidence of phase separation cubic InxGa1-xN epitaxial layers by resonant Raman scattering 
    Appl. Phys. Lett. 75, 3602 (1999)
  • L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A. Tabate, J.L.P. Castineira, and D.J. As 
    Relaxation effects on the negatively charged Mg impurity in zincblende GaN 
    phys. stat. sol. (b) 216, 541 (1999)
  • D.J. As and K. Lischka (invited paper) 
    Heteroepitaxy of doped and undoped cubic group III-nitrides 
    phys. stat. sol. (a) 176, 475 (1999)
  • T. Frey, D.J. As, D. Schikora, K. Lischka, J. Holst, A. Hoffmann 
    Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures 
    phys. stat. sol. (b) 216, 259 (1999)
  • R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. As, and K. Lischka 
    Determination of optical constants for cubic InxGa1-xN 
    phys. stat. sol. (b) 216, 265 (1999)
  • J. Holst, A. Hoffmann, I. Broser, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, K. Lischka 
    The influence of structural properties on the mechanisms of optical amplification in cubic GaInN 
    phys. stat. sol. (b) 216, 471 (1999)
  • A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora, and K. Lischka 
    Raman scattering study of zinc blende InxGa1-xN alloys 
    phys. stat. sol. (b) 216, 769 (1999)
  • J. Portmann, C. Haug, R. Brenn, T. Frey, B. Schöttker, D.J. As 
    Ion-channeling studies of cubic GaN and InxGa1-xN on GaAs substrates 
    Nuclear Instruments and Methods in Physics Research B 155, 489 (1999)
  • A. Tabata, J.R. Leite, A.P. Lima, E. Silveira, V. Lemos, T. Frey, D.J. As., D. Schikora, and K. Lischka 
    Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers 
    Appl. Phys. Lett. 75 (8), 1095 (1999)
  • R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, B. Schöttker, T. Frey , D.J. As, D. Schikora, K. Lischka 
    Time Resolved Photoluminescence of Cubic Mg Doped GaN 
    MRS Proc. Vol. 572, 225 (1999)
  • A. Tabata, A.P. Lima, J.R. Leite, V. Lemos, D. Schikora, B. Schöttker, U. Köhler, D.J. As, and K. Lischka 
    Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrates 
    Semicond. Sci. Technol. 14 (1999) 318-322
  • M. Lisker, A. Krtschil, H. Witte, J. Christen, D.J. As, B. Schöttker, and K. Lischka 
    Electrical and photoelectrical characterization of deep defects in cubic GaN on GaAs 
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998 
    MRS Internet J. Nitride Semicond. Res. 4S1, U190-U195, G2.3 (1999)
  • J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D.J. As, D. Schikora, K. Lischka 
    Mechanisms of Optical Gain in Cubic GaN and InGaN 
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998 
    MRS Internet J. Nitride Semicond. Res. 4S1, U80-U85, G3.14 (1999)
  • D.J. As, T. Simonsmeier, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, and K. Lischka 
    P- and n-type doping of MBE grown cubic GaN/GaAs epilayers 
    MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, December 1998 
    MRS Internet J. Nitride Semicond. Res. 4S1, U238-U243, G3.24 (1999)
  • J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka 
    Optical gain and stimulated emission of cleaved cubic gallium nitrite 
    Appl. Phys. Lett. 74, 1966 (1999) 
  • R. Pässler, E. Griebl, H. Riepl, G. Lautner, S. Bauer, H. Preis, W. Gebhardt, B. Buda, D.J. As, D. Schikora, K. Lischka, K. Papagelis, and S. Ves 
    Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films 
    J. Appl. Phys. 86, 4403 (1999)
  • A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schöttker, T. Frey, D.J. As, and K. Lischka 
    Growth of cubic InN on InAs (001) by plasma assisted molecular beam epitaxy 
    J. Crystal Growth 201/202, 396 (1999) 
  • Z.X. Liu, A.R. Goñi, K. Syassen, H. Siegle, C. Thomsen, B. Schöttker, D.J. As, and D. Schikora 
    Pressure and temperature effects on optical transitions in cubic GaN 
    J. Appl. Phys. 86 (2), 929 (1999)
  • C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka 
    Cathodoluminescence of homogeneous cubic GaN/GaAs (001) layers 
    Semicond. Sci. Techn. 14, 161 (1999) 
  • U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn 
    Optical constants of cubic GaN in the energy range of 1.5 to 3.7 eV 
    J. Appl. Phys. 85, 404 (1999)
  • A.P. Lima, T. Frey, U. Köhler, C. Wang, D.J. As, K. Lischka, D. Schikora 
    Surface irregularities of MBE grown cubic GaN layers 
    J. Crystal Growth 197, 31 (1999)

 

Publications in 1998:

  • N. Puhlmann, I. Stolpe, H.U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, and K. Lischka: 
    Megagauss cyclotron resonance in cubic GaN layers 
    Proc. 24rd Int. Conf. on Physics of Semicond., Jerusalem, August 1998 (invited paper), ed. D. Gershoni, World Scientifique, Singapore 1998
  • N. Puhlmann, I. Stolpe, H.-U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, K. Lischka: 
    Magneto-optical investigations on cubic GaN in high magnetic fields 
    Physica B 256-258, 659 (1998)
  • D.J. As (invited paper): 
    Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers 
    phys. stat. sol. (b) 210, 445 (1998) 
  • D.J. As (invited paper): 
    Defect Related Optical and Electrical Properties of MBE Grown Cubic GaN Epilayers 
    Radiation Effects and Defects in Solids 146, 145 (1998)
  • D.J. As, T. Simonsmeier, B. Schöttker, T. Frey, and D. Schikora:
    Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy 
    Appl. Phys. Lett. 73, 1835-1837 (1998)
  • I. Loa, S. Gronemeyer, C. Thomsen, O. Ambacher, D. Schikora, and D.J. As: 
    Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN 
    J. Raman Spectroscopy 29, 291-295 (1998)
  • B. Buda, C. Wang, W. Wrede, O. Leifeld, D.J. As, D. Schikora, and K. Lischka: 
    The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence 
    Semicond. Sci. Technol. 13, 921-926 (1998)
  • J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, and K. Lischka:
    Mechanisms of optical gain in cubic gallium nitrite 
    Appl. Phys. Lett. 72, 1439 (1998) 
  • D.J. As, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
    Depth resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers 
    MRS Proc. Vol. 482, 661 (1998)
  • C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka:
    Cathodoluminescence of Cubic GaN Epilayers 
    Materials Science Forum Vols. 264-268 (1998) pp. 1339-1342
  • B. Schöttker, J. Kühler, D.J. As, D. Schikora, and K. Lischka 
    An Accurate Method to Determine the Growth Conditions During Molecular Beam Epitaxy of Cubic GaN 
    Materials Science Forum Vols. 264-268 (1998) pp. 1173-1176
  • D.J. As, C. Wang, B. Schöttker, D. Schikora, K. Lischka: 
    Depth-resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers 
    Mat. Res. Soc. Symp. Proc. Vol. 482, pp. 661-666 (1998) 

 

Publications in 1997:  

  • H. Siegle, A.R. Goni, C. Thomsen, C. Ulrich, K. Syassen, B. Schöttker, D.J. As, D. Schikora:
    High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs 
    Mat. Res. Soc. Symp. Proc. Vol. 468, pp. 225-230 (1997)
  • D.J.As, A.Greiner, M.Lübbers, J.Mimkes, M.Hankeln, K.Lischka, D.Schikora: 
    Hall-effect measurements on stoichiometrically grown cubic GaN epilayers on GaAs substrates 
    Proc. 23th Int.Conf.on the Physics of Semiconductors, Berlin, Germany 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific Publ. Singapore,1997), vol. 1, p. 509
  • D.J.As, A.Rüther, M.Lübbers, J.Mimkes, K.Lischka, D.Schikora: 
    P-type conductivity with a high hole mobility in cubic GaN/GaAs epilayers 
    Mat. Res. Soc. Symp. Proc. No. 449,  pp. 615-620 (1997)
  • D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka: 
    The near band edge photoluminescence of cubic GaN epilayers 
    Appl. Phys. Lett. 70, 1311-1313 (1997)
  • D.Schikora, B. Schöttker, D.J. As, K.Lischka:
    Epitaxial growth and properties of cubic group III-nitride layers
    SPIE-Int. Soc. Opt. Eng. Proc. Vol. 2994, 60 (1997)

 

Publications in 1996:

  • D.J. As, D.Schikora, A.Greiner, M.Lübbers, J.Mimkes, K.Lischka: 
    P- and n-type cubic GaN epilayers on GaAs 
    Phys. Rev. B 54, R11118 (1996)
  • B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora, K. Lischka: 
    Initial roughness and relaxation behaviour of MBE grown ZnSe/GaAs 
    Acta physica polonica A 90, 997 (1996)
  • D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, F. Henneberger: 
    Epitaxial growth and optical transitions of cubic GaN films 
    Phys. Rev. B 54, R8381 (1996) 

 

Publications in 1994:

  • K. Weich, J. Hörer, E. Patzak, D.J. As, R. Eggemann, M. Möhrle: 
    Injection locked laser as wavelength converter and optical regenerator up to 10 Gbit/s
    Conf.Dig.ECOC 94, Vol.2, WeB2.2, 643 (1994)
  • U. Feiste, D.J. As, A. Ehrhardt, M. Möhrle, D. Franke: 
    Investigations on the stability of an all-optically extracted clock at 18 GHz using a selfpulsating DFB-laser
    Conf.Dig.ECOC 94, Vol.1, TuP.29, 487 (1994)
  • K. Weich, R. Eggemann, J. Hörer, D.J. As, M. Möhrle, E. Patzak: 
    10 Gbit/s all-optical decision with two section semiconductor lasers
    Electronics Letters 30, 784 (1994)
  • K. Weich, E. Patzak, J. Hörer, D.J. As, R. Eggemann, M. Möhrle: 
    5 Gbit/s optical switching between two injection locked modes of a semiconductor laser
    Tech.Dig.CLEO 94, Vol.8, CTuT4, 170 (1994)
  • K. Weich, J. Hörer, D.J. As, R. Eggemann, M. Möhrle, E. Patzak: 
    2.5 Gbit all-optical clocked decision and retiming circuit using bistable semiconductor lasers
    Tech.Dig.OFC 94, Vol.4, WB5, 79 (1994)
  • U. Feiste, D.J. As, A. Ehrhardt: 
    18 GHz all-optical frequency locking and clock recovery using a selfpulsating two-section DFB-laser
    Photonics Technology Letters 6, 106 (1994)

 

Publications in 1993:

  • A.Ehrhardt, D.J. As, U. Feiste: 
    All optical clock extraction at 18 GHz by a selfpulsating two-section DFB-laser
    Conf.Dig.ECOC 93, Vol.3, ThP12.9, 85 (1993)
  • B. Sartorius, M. Möhrle, D.J. As, J. Hörer, H. Venghaus, U. Feiste: 
    High frequency locking at 18 GHz in a selfpulsating DFB laser
    Conf.Dig.ECOC 93, Vol.2, WeP8.2, 365 (1993)
  • G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler, D.J.As: 
    Enhancement of the in-plane effective mass of electrons in modulation doped InGaAs quantum wells due to confinement effects
    Phys.Rev.B 48, 2328 (1993)
  • D.J. As, R.Eggemann, U. Feiste, M. Möhrle, E. Patzak, K. Weich:
    Clock recovery based on a new type of selfpulstion in a 1.5 µm two-section InGaAsP-InP DFB laser
    Electronics Letters 29, 141 (1993)
  • M. Maier, K. Köhler, A. Höpner, D.J. As: 
    Composition analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by deterimination of film thickness
    J. Appl. Phys. 73, 3820 (1993)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
    High resolution carrier temperature and lifetime topography of semiinsulating LEC GaAs using spatially and spectrally resolved photoluminescence
    J. Appl. Phys. 73, 1430 (1993)

 

Publications in 1992:

  • J.D. Ralston, I. Esquivias, S. Weiser, D.F.G. Gallagher, P.J. Tasker, E.C. Larkins, J. Rosenzweig, H.P. Zappe, J. Fleissner, D.J. As: 
    16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure
    SPIE Vol. 1680 High-Speed Electronics and Optoelectronics, 127 (1992)
  • Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz: 
    Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
    Appl. Phys. Lett. 60, 1609 (1992)
  • K. Hingerl, W. Jantsch, P. Juza, M. Lang, H. Sitter, J. Lilja, M. Pessa, D.J. As, W. Rothemund: 
    Determination of acceptor binding energies in ZnSe
    J. Crystal Growth 117, 341 (1992)
  • M. Maier, D.J. As, K. Köhler, A. Höpner: 
    Composition analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
    in "Secondary Ion Mass Spectroscopy SIMS VIII", edited by A. Benninghoven, K.T.F. Jansen, J. Tümpner, H.W. Werner (J. Wiley & Sons, Chichester, 1992), p.873
  • D.J.As, S. Korf, Z.M. Wang, J. Windscheif, K.H. Bachem, W. Jantz: 
    Low temperature photoluminescence topography of MOCVD grown InGaP, AlGaAs, and AlGaAs/GaAs single quantum wells
    Semiconductor Sci. Technol. 7, A27 (1992)
  • Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz: 
    Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
    Appl. Phys. Lett. 60, 1609 (1992)

 

Publications in 1991:

  • H.P. Zappe, D.J. As: 
    Carrier transport in HEMTs analyzed by high-field electroluminescence
    IEEE Electron Device Letters 12, 590 (1991)
  • H.P. Zappe, D.J. As: 
    Spectrum of hot-electron luminescence from high electron mobility transistors
    Appl. Phys. Lett. 59, 2257 (1991)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
    Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers
    Appl. Surf. Sci. 50, 228 (1991)
  • J.D. Ralston, M. Ramsteiner, B. Dischler, M. Maier, G. Brandt, P. Koidl, D.J. As: 
    Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum well structures
    J. Appl. Phys. 70, 2195 (1991)
  • K. Hingerl, W. Jantsch, P. Juza, H. Sitter, D.J. As, W. Rothemund: 
    Characterization of MBE grown ZnSe epilayers doped with Arsenic
    Crystal Properties and Preparation 32-34, 276 (1991)

 

Publications in 1990:

  • K. Hingerl, J. Lilja, M. Toivonen, W. Jantsch, D.J. As, W. Rothemund, P. Juza, H. Sitter: 
    Electrical and optical properties of As and Li doped ZnSe films
    SPIE Proceedings Vol. 1361, 943 (1990)
  • Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
    Electron temperature and lifetime mapping of photoexcited carriers in semi-insulating LEC GaAs substrates by photoluminescence
    Inst. Phys. Conf. Ser. No. 112, 190 (1990)
  • T. Schweizer, K. Köhler, P. Ganser, D.J. As, K.H. Bachem: 
    Investigation of the interface quality of GaAs/AlGaAs heterostructures
    Superlattices and Microstructures 8, 179 (1990)
  • H.P. Zappe, D.J. As: 
    Mechanisms for the emission of visible light from GaAs field-effect transistors
    Appl. Phys. Lett. 57, 2919 (1990)
  • K. Hingerl, H. Sitter, D.J. As, W. Rothemund: 
    Growth and Characterization of ZnSe grown on GaAs by Hot-Wall-Epitaxy
    J. Crystal Growth 101, 180 (1990)
  • D.J. As, Th. Frey, W. Jantz, G. Kaufel, K. Köhler, W. Rothemund, T. Schweizer, H.P. Zappe: 
    Influences of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructrures
    J. Electr. Mat. 19, 747 (1990)

 

Publications in 1988:

  • D.J. As, P.W. Epperlein, P.W. Mooney: 
    Deep electron traps in GaAs/n-AlGaAs single quantum wells  
    J. Appl. Phys. 64, 2408 (1988)
  • D.J. As, P.W. Epperlein, P.W. Mooney: 
    DLTS measurements on MBE-grown narrow GaAs/-AlGaAs single quantum wells  
    Inst. Phys. Conf. Ser. No. 91, 561 (1988)

 

Publications in 1987:

  • D.J. As, L. Palmetshofer: 
    Laser beam heating and high temperature luminescence of CdTe
    J. Appl. Phys. 62, 369 (1987)
  • D.J. As, J.M. Langer: 
    Energy gap and the joint density of states temperature dependence in CdTe
    Acta Physica Polonica A 71, 149 (1987)
  • D.J. As, L. Palmetshofer, J.M. Langer: 
    Laser annealing and photo-induced sublimation in compound semiconductors
    Acta Physica Polonica A 71, 363 (1987)

 

Publications in 1985:

  • D.J. As, L. Palmetshofer: 
    Laser annealing of defects in CdTe epitaxial layers
    J. Crystal Growth 72, 246 (1985)
  • J. Schuller, D.J. As, W. Faschinger, K. Lischka, L. Palmetshofer, H. Sitter, W. Jantsch: 
    Thermal and laser annealing of intrinsic defects in CdTe epilayers
    In Proc. 13th Int. Conf. on Defects in Semiconductors, L.C. Kimmerling and J.M. Parsey eds., Metallurgical Soc. of AIME (1985), p. 553

 

Publications in 1984:

  • D.J. As, L. Palmetshofer, J. Schuller, K. Lischka: 
    CW-laser annealing of CdTe epitaxial layers
    in: Laser Processing and Diagnostics, ed. D. Bäuerle, Springer Ser. Chem. Phys. 39, 64 (1984)

 

Nonscientific papers:

  •  D.J. As: 
    International Workshop on Nitride Semiconductors (IWN-2002) in Aachen, Germany, 22-25 July 2002
    phys. stat. sol. (b) 233, 555 (2002)
Gruppenleitung

Prof. Dr. Donat Josef As

Optoelektronische Halbleiter

Donat Josef As
Telefon:
+49 5251 60-5838
Fax:
+49 5251 60-5843
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P8.2.10
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