Selected Publications

Please refer to the Research Information System (RIS) for a complete list of all publications of the Theoretical Materials Physics group.

Defect-assisted exciton transfer across the tetracene-Si(111):H interface

M. Krenz, U. Gerstmann, W. G. Schmidt, Phys. Rev. Lett. 137, 076201 (2024). doi:10.1103/PhysRevLett.132.076201

Controlled growth of ordered monolayers of N-heterocyclic carbenes on silicon

M. Franz, S. Chandola, M. Koy, R. Zielinski, H. Aldahhak, M. Das, M. Freitag, U. Gerstmann, D. Liebig, A.K. Hoffmann, M. Rosin, W.G. Schmidt, C. Hogan, F. Glorius, N. Esser, M. Dähne
Nature Chemistry 13, 828 (2021). doi:10.1038/s41557-021-00721-2

Vibration-Driven Self-Doping of Dangling-Bond Wires on Si(553)-Au Surfaces

C. Braun, S. Neufeld, U. Gerstmann, S. Sanna, J. Plaickner, E. Speiser, N. Esser, W. G. Schmidt Phys. Rev. Lett. 124, 146802 (2020). doi:10.1103/PhysRevLett.124.146802

 

Beyond the molecular movie: Dynamics of bands and bonds during a photoinduced phase transition

C.W. Nicholson, A. Lücke, W.G. Schmidt, M. Puppin, L. Rettig, R. Ernstorfer, M. Wolf Science 362, 821 (2018). doi:10.1126/science.aar4183

 

Signatures of transient Wannier-Stark localization in bulk gallium arsenide

C. Schmidt, J. Bühler, A.-C. Heinrich, J. Allerbeck, R. Podzimski, D. Berghoff, T. Meier, W.G. Schmidt, C. Reichl, W. Wegscheider, D. Brida, A. Leitenstorfer Nature Communications 9, 2890 (2018). https://doi.org/10.1038/s41467-018-05229-x

Optically excited structural transition in atomic wires on surfaces at the quantum limit

T. Frigge, B. Hafke, T. Witte, B. Krenzer, C. Streubühr, A. Samad Syed, V. Miksic Trontl, I. Avigo, P. Zhou, M. Ligges, D. von der Linde, U. Bovensiepen, M. Horn-von Hoegen, S. Wippermann, A. Lücke, S. Sanna, U. Gerstmann, W. G. Schmidt
Nature 544, 207 (2017), doi:10.1038/nature21432

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

B.M. George, J. Behrends, A. Schnegg, T.F. Schulze, M. Fehr, L. Korte, B. Rech, K. Lips, M. Rohrmüller, E. Rauls, W.G. Schmidt, U. Gerstmann Phys. Rev. Lett. 110, 136803 (2013), doi:10.1103/PhysRevLett.110.136803

 

Identification of the Nitrogen Split Interstitial (N-N)N in GaN

H.J. von Bardeleben, J.L. Cantin, U. Gerstmann, A. Scholle, S. Greulich-Weber, E. Rauls, M. Landmann, W.G. Schmidt, A. Gentils, J. Botsoa, M. F. Barthe Phys. Rev. Lett. 109, 206402 (2012), doi:10.1103/PhysRevLett.109.206402

 

Atomistic Picture of Charge Density Wave Formation at Surfaces

S. Wall, B.Krenzer, S. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, W.G. Schmidt, M. Horn-von Hoegen Phys. Rev. Lett. 109, 186101 (2012), doi:10.1103/PhysRevLett.109.186101

 

Electrically Detected Electron-Spin-Echo Envelope Modulation: A Highly Sensitive Technique for Resolving Complex Interface Structures

F. Hoehne, J. Lu, A.R. Stegner, M. Stutzmann, M.S. Brandt, M. Rohrmüller, W.G. Schmidt, U. Gerstmann Phys. Rev. Lett. 106, 196101 (2011), doi:10.1103/PhysRevLett.106.196101

 

Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array

S. Wippermann, W.G. Schmidt Phys. Rev. Lett. 105, 126102 (2010), doi:10.1103/PhysRevLett.105.126102

 

Structure of Si(111)-In Nanowires Determined from the Midinfrared Optical Response

S. Chandola, K. Hinrichs, M. Gensch, N. Esser, S. Wippermann, W.G. Schmidt, F. Bechstedt, K. Fleischer, J.F. McGilp Phys. Rev. Lett. 102, 226805 (2009), doi:10.1103/PhysRevLett.102.226805

 

Resolving the Optical Spectrum of Water: Coordination and Electrostatic Effects

A. Hermann, W.G. Schmidt, P. Schwerdtfeger Phys. Rev. Lett. 100, 207403 (2008), doi:10.1103/PhysRevLett.100.207403

 

Adatom-Induced Conductance Modication of In Nanowires: Potential-Well Scattering and Structural Effects

S. Wippermann, N. Koch, W.G. Schmidt Phys. Rev. Lett. 100, 106802 (2008), doi:10.1103/PhysRevLett.100.106802

Long-Range Chiral Recognition due to Substrate Locking and Substrate-Adsorbate Charge Transfer

S. Blankenburg, W.G. Schmidt Phys. Rev. Lett. 99, 196107 (2007), doi:10.1103/PhysRevLett.99.196107

Hexagon versus Trimer Formation in In Nanowires on Si(111): Energetics and Quantum Conductance

A.A. Stekolnikov, K. Seino, F. Bechstedt, S. Wippermann, W.G. Schmidt, A. Calzolari, M. Buongiorno Nardelli Phys. Rev. Lett. 98, 026105 (2007), doi:10.1103/PhysRevLett.98.026105

Attracted by Long-Range Electron Correlation: Adenine on Graphite

F. Ortmann, W.G. Schmidt, F. Bechstedt Phys. Rev. Lett. 95, 186101 (2005), doi:10.1103/PhysRevLett.95.186101

Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110)

M. Preuss, W.G. Schmidt, F. Bechstedt Phys. Rev. Lett. 94, 236102 (2005), doi:10.1103/PhysRevLett.94.236102

 

Femtosecond Transfer Dynamics of Photogenerated Electrons at a Surface Resonance of Reconstructed InP(100)

L. Töben, L. Gundlach, R. Ernstorfer, R. Eichberger, T. Hannappel, F. Willig, A. Zeiser, J. Förstner, A. Knorr, P.H. Hahn, W.G. Schmidt Phys. Rev. Lett. 94, 067601 (2005), doi:10.1103/PhysRevLett.94.067601

 

Optical Absorption of Water: Coulomb Effects versus Hydrogen Bonding

P.H. Hahn, W. G. Schmidt, K. Seino, M. Preuss, F. Bechstedt, J. Bernholc Phys. Rev. Lett. 94, 037404 (2005), doi:10.1103/PhysRevLett.94.037404

 

Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the (4x6) Phase

A. Ohtake, P. Kocán, K. Seino, W. G. Schmidt, N. Koguchi Phys. Rev. Lett. 93, 266101 (2004), doi:10.1103/PhysRevLett.93.266101

 

Energetics of Si(001) Surfaces Exposed to Electric Fields and Charge Injection

K. Seino, W.G. Schmidt, F. Bechstedt Phys. Rev. Lett. 93, 036101 (2004), doi:10.1103/PhysRevLett.93.036101

 

InP(001)-(2×1) Surface: A Hydrogen Stabilized Structure

W.G. Schmidt, P.H. Hahn, F. Bechstedt, N. Esser, P. Vogt, A. Wange, W. Richter Phys. Rev. Lett. 90, 126101 (2003), doi:10.1103/PhysRevLett.90.126101

 

Bulk Excitonic Effects in Surface Optical Spectra

P.H. Hahn, W.G. Schmidt, F. Bechstedt Phys. Rev. Lett. 88, 016402 (2001), doi:10.1103/PhysRevLett.88.016402

 

Optical Anisotropy of the SiC(001)-(3x2) Surface: Evidence for the Two-Adlayer Asymmetric-Dimer Model

W. Lu, W.G. Schmidt, E.L. Briggs, J. Bernholc Phys. Rev. Lett. 85, 4381 (2000), doi:10.1103/PhysRevLett.85.4381

 

Reectance Anisotropy of GaAs(100): Theory and Experiment

AI. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole Phys. Rev. Lett. 81, 721 (1998), doi:10.1103/PhysRevLett.81.721

 

Atomic Structure of the Sb-Stabilized GaAs(100)-(2x4) Surface

N. Esser, AI. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W.G. Schmidt, F. Bechstedt, R. Del Sole Phys. Rev. Lett. 77, 4402 (1996), doi:10.1103/PhysRevLett.77.4402

 

Optical Properties of Ordered As Layers on InP(110) Surfaces

P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt Phys. Rev. Lett. 77, 759 (1996), doi:10.1103/PhysRevLett.77.759