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Liste im Research Information System öffnen

2019

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth (2019), pp. 164-168

DOI


2018

Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates

A. Trapp, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (2018)

DOI


Ultrafast electric phase control of a single exciton qubit

A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters (2018), pp. 111105

We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse p/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3p within 100 ps which is below the dephasing time of the quantum dot exciton.


Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, 2018


MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, 2018


Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks

V. Zolatanosha, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (2018)

DOI


Spin inertia of resident and photoexcited carriers in singly charged quantum dots

E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B (2018)

DOI


Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

S. Blumenthal, D. Reuter, D.J. As, physica status solidi (b) (2018)

DOI


Theory of spin inertia in singly charged quantum dots

D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B (2018)

DOI


Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots

E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2018)

DOI


Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures

J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State (2018), pp. 1611-1617

DOI


Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2018)

DOI


2017

Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth (2017), pp. 7-10

DOI


Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures

V. Zolatanosha, D. Reuter, Microelectronic Engineering (2017), pp. 35-39

DOI


Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, physica status solidi (b) (2017)

DOI


Optical Properties of Germanium Doped Cubic GaN

D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances (2017), pp. 283-288

DOI


InAs heteroepitaxy on GaAs patterned by nanosphere lithography

V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, 2017


Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth (2017), pp. 46-50

DOI


Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography

T. Riedl, V.. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, 2017


Spin dynamics of quadrupole nuclei in InGaAs quantum dots

M.S. Kuznetsova, R.V. Cherbunin, I.Y. Gerlovin, I.V. Ignatiev, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2017)

DOI


Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, physica status solidi (b) (2017)

DOI


Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures

T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth (2017), pp. 149-153

DOI


Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs

T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, 2017


Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact

A. Srinivasan, D. Miserev, K. Hudson, O. Klochan, K. Muraki, Y. Hirayama, D. Reuter, A. Wieck, O. Sushkov, A. Hamilton, Physical Review Letters (2017)

DOI


Incorporation of germanium for n-type doping of cubic GaN

M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, physica status solidi (b) (2017)

DOI


2016

Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization

A.R. Onur, J.P. de Jong, D. O'Shea, D. Reuter, A.D. Wieck, C.H. van der Wal, Physical Review B (2016)

DOI


Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy

P.S. Sokolov, M.Y. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, A.D. Wieck, Physical Review B (2016)

DOI


Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots

S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, physica status solidi (c) (2016), pp. 292-296

We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations.


Phase sensitive properties and coherent manipulation of a photonic crystal microcavity

W. Quiring, B. Jonas, J. Förstner, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Optics Express (2016)

We present phase sensitive cavity field measurements on photonic crystal microcavities. The experiments have been performed as autocorrelation measurements with ps double pulse laser excitation for resonant and detuned conditions. Measured E-field autocorrelation functions reveal a very strong detuning dependence of the phase shift between laser and cavity field and of the autocorrelation amplitude of the cavity field. The fully resolved phase information allows for a precise frequency discrimination and hence for a precise measurement of the detuning between laser and cavity. The behavior of the autocorrelation amplitude and phase and their detuning dependence can be fully described by an analytic model. Furthermore, coherent control of the cavity field is demonstrated by tailored laser excitation with phase and amplitude controlled pulses. The experimental proof and verification of the above described phenomena became possible by an electric detection scheme, which employs planar photonic crystal microcavity photo diodes with metallic Schottky contacts in the defect region of the resonator. The applied photo current detection was shown to work also efficiently at room temperature, which make electrically contacted microcavities attractive for real world applications.


Heat flow, transport and fluctuations in etched semiconductor quantum wire structures

C. Riha, O. Chiatti, S.S. Buchholz, D. Reuter, A.D. Wieck, S.F. Fischer, physica status solidi (a) (2016), pp. 571-581

DOI


Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers

S. Tiemeyer, M. Bombeck, H. Göhring, M. Paulus, C. Sternemann, J. Nase, F.J. Wirkert, J. Möller, T. Büning, O.H. Seeck, D. Reuter, A.D. Wieck, M. Bayer, M. Tolan, Nanotechnology (2016)

DOI


Electric field distribution and exciton recombination line shape in GaAs

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Materials Research Express (2016)

DOI


Exciton Exchange between Nearly-Free and Acceptor-Bound States of a Positive Trion Assisted by Cyclotron Excitation

J. Jadczak, L. Bryja, A. Wójs, G. Bartsch, D. Yakovlev, M. Bayer, P. Plochocka, M. Potemski, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), pp. 600-601

DOI


Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots

S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T. Meier, A. Zrenner, M. Bayer, Applied Physics B (2016)

Spins in semiconductor quantum dots have been considered as prospective quantum bit excitations. Their coupling to the crystal environment manifests itself in a limitation of the spin coherence times to the microsecond range, both for electron and hole spins. This rather short-lived coherence compared to atomic states asks for manipulations on timescales as short as possible. Due to the huge dipole moment for transitions between the valence and conduction band, pulsed laser systems offer the possibility to perform manipulations within picoseconds or even faster. Here, we report on results that show the potential of optical spin manipulations with currently available pulsed laser systems. Using picosecond laser pulses, we demonstrate optically induced spin rotations of electron and hole spins. We further realize the optical decoupling of the hole spins from the nuclear surrounding at the nanosecond timescales and demonstrate an all-optical spin tomography for interacting electron spin sub-ensembles.


Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

P. Sitarek, K. Ryczko, J. Misiewicz, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), pp. 849-851

DOI


A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

N. Sharma, D. Reuter, Journal of Crystal Growth (2016), pp. 225-229

DOI


Thermal energy and charge currents in multi-terminal nanorings

T. Kramer, C. Kreisbeck, C. Riha, O. Chiatti, S.S. Buchholz, A.D. Wieck, D. Reuter, S.F. Fischer, AIP Advances (2016)

DOI


Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal of Applied Physics (2016)

DOI


2015

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

A. Finke, M. Ruth, S. Scholz, A. Ludwig, A.D. Wieck, D. Reuter, A. Pawlis, Physical Review B (2015)

DOI


Photonic crystal cavities with metallic Schottky contacts

W. Quiring, M. Al-Hmoud, A. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Applied Physics Letters (2015)

We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5K and 310K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.


Robust Population Inversion by Polarization Selective Pulsed Excitation

D. Mantei, J. Förstner, S. Gordon, Y.A. Leier, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Scientific Reports (2015), pp. 10313

The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.


Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice

T. Jostmeier, T. Wecker, D. Reuter, D.J. As, M. Betz, Applied Physics Letters (2015)

DOI


Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process

M. Bürger, J. Lindner, D. Reuter, D.J. As, physica status solidi (c) (2015), pp. 452-455

We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on 3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes and densities were obtained from uncapped samples by atomic force microscopy. These results were correlated with similar but capped samples by photoluminescence experiments. The QD density varies by one order of magnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer thickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison between the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov growth mode as the main formation process of the cubic GaN QDs.


Spatially indirect transitions in electric field tunable quantum dot diodes

A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, physica status solidi (b) (2015), pp. 437-441

We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.


Nuclear spin polarization in the electron spin-flip Raman scattering of singly charged (In,Ga)As/GaAs quantum dots

J. Debus, D. Kudlacik, V.F. Sapega, D. Dunker, P. Bohn, F. Paßmann, D. Braukmann, J. Rautert, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2015)

DOI


Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots

M. Mehta, D. Reuter, M. Kamruddin, A.K. Tyagi, A.D. Wieck, Nano (2015)

DOI


Transform-limited single photons from a single quantum dot

A.V. Kuhlmann, J.H. Prechtel, J. Houel, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Nature Communications (2015)

DOI


Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

J.C.H. Chen, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis, D.A. Ritchie, K. Trunov, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters (2015)

DOI


2014

All-optical implementation of a dynamic decoupling protocol for hole spins in (In,Ga)As quantum dots

S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014)

DOI


Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pumping

M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, M.Y. Petrov, I.V. Ignatiev, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014)

DOI


Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, physica status solidi (b) (2014), pp. 873-878

DOI


Magnetoconductance of a magnetic double barrier in a quantum wire

B. Schüler, M. Cerchez, H. Xu, T. Heinzel, D. Reuter, A. Wieck, Superlattices and Microstructures (2014), pp. 54-62

DOI


Excitation of complex spin dynamics patterns in a quantum-dot electron spin ensemble

S. Varwig, I.A. Yugova, A. René, T. Kazimierczuk, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014)

DOI


Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy

T. Henn, T. Kießling, L.W. Molenkamp, D. Reuter, A.D. Wieck, K. Biermann, P.V. Santos, W. Ossau, physica status solidi (b) (2014), pp. 1839-1849

DOI


All-optical tomography of electron spins in (In,Ga)As quantum dots

S. Varwig, A. René, S.E. Economou, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T.L. Reinecke, M. Bayer, Physical Review B (2014)

DOI



Confocal shift interferometry of coherent emission from trapped dipolar excitons

J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U. Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters (2014)

DOI


Magnetic properties of Gd-doped GaN

S. Shvarkov, A. Ludwig, A.D. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H. Becker, D. Rogalla, D. Reuter, physica status solidi (b) (2014), pp. 1673-1684

DOI


Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe

Y. Kim, D. Sleiter, K. Sanaka, D. Reuter, K. Lischka, Y. Yamamoto, A. Pawlis, Current Applied Physics (2014), pp. 1234-1239

DOI


Observation of quantum states without a semiclassical equivalence bound by a magnetic field gradient

B. Schüler, M. Cerchez, H. Xu, J. Schluck, T. Heinzel, D. Reuter, A.D. Wieck, Physical Review B (2014)

DOI


Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

F. Lo, C. Huang, K. Chou, J. Guo, H. Liu, V. Ney, A. Ney, S. Shvarkov, S. Pezzagna, D. Reuter, C. Chia, M. Chern, A.D. Wieck, J. Massies, Journal of Applied Physics (2014)

DOI


Direct Quantitative Electrical Measurement of Many-Body Interactions in Exciton Complexes in InAs Quantum Dots

P. Labud, A. Ludwig, A. Wieck, G. Bester, D. Reuter, Physical Review Letters (2014)

DOI


Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

J. Debus, V.F. Sapega, D. Dunker, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014)

DOI


Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

D.J. Carrad, A.M. Burke, O. Klochan, A.M. See, A.R. Hamilton, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Physical Review B (2014)

DOI


Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks

M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, D.J. As, physica status solidi (c) (2014), pp. 790-793

DOI


2013

Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots

A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B (2013)

DOI


Hot carrier effects on the magneto-optical detection of electron spins in GaAs

T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B (2013)

DOI


The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter (2013)

DOI


Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2013)

DOI


Hot carrier effects on the magneto-optical detection of electron spins in GaAs

T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B (2013)

DOI


Optical Spectroscopy of Spin Noise

V.S. Zapasskii, A. Greilich, S.A. Crooker, Y. Li, G.G. Kozlov, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review Letters (2013)

DOI


Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy

G. Moody, R. Singh, H. Li, I. Akimov, M. Bayer, D. Reuter, A. Wieck, S. Cundiff, Solid State Communications (2013), pp. 65-69

DOI


Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters (2013)

DOI


Spin relaxation length in quantum dot spin LEDs

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, physica status solidi (c) (2013), pp. 1214-1217

DOI


Charge noise and spin noise in a semiconductor quantum device

A.V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M. Poggio, R.J. Warburton, Nature Physics (2013), pp. 570-575

DOI


Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: Spintronics VI, SPIE, 2013

DOI


Origins of conductance anomalies in ap-type GaAs quantum point contact

Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A.D. Wieck, Physical Review B (2013)

DOI


Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells

G.J. Schinner, J. Repp, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, A.O. Govorov, A.W. Holleitner, J.P. Kotthaus, Physical Review Letters (2013)

DOI


Anisotropic Zeeman shift in p-type GaAs quantum point contacts

Y. Komijani, M. Csontos, I. Shorubalko, U. Zülicke, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, EPL (Europhysics Letters) (2013)

DOI


Observation of the Kondo effect in a spin-3/2 hole quantum dot

O. Klochan, A. Micolich, A. Hamilton, K. Trunov, D. Reuter, A. Wieck, in: COMMAD 2012, IEEE, 2013

DOI


Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum

Y. Komijani, T. Choi, F. Nichele, K. Ensslin, T. Ihn, D. Reuter, A.D. Wieck, Physical Review B (2013)

DOI


Evidences of defect contribution in magnetically ordered Sm-implanted GaN

F. Lo, J. Guo, C. Huang, K. Chou, H. Liu, V. Ney, A. Ney, M. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current Applied Physics (2013), pp. S7-S11

DOI


Frequency-Stabilized Source of Single Photons from a Solid-State Qubit

J.H. Prechtel, A.V. Kuhlmann, J. Houel, L. Greuter, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Physical Review X (2013)

DOI


A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

A.V. Kuhlmann, J. Houel, D. Brunner, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Review of Scientific Instruments (2013)

DOI


Spin relaxation length in quantum dot spin LEDs

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, physica status solidi (c) (2013), pp. 1214-1217

DOI


Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U. Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography (2013), pp. 887-892

DOI


Temperature dependence of hole spin coherence in (In,Ga)As quantum dots measured by mode-locking and echo techniques

S. Varwig, A. René, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2013)

DOI


Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with two-dimensional spectroscopy

G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, S.T. Cundiff, Physical Review B (2013)

DOI


Excitons, Biexcitons, and Trions in an InAs Quantum Dot Ensemble Studied with 2D Fourier-Transform Spectroscopy

G. Moody, R. Singh, H. Li, I. Akimov, M. Bayer, D. Reuter, A. Wieck, S.T. Cundiff, in: Conference on Lasers and Electro-Optics 2012, OSA, 2013

DOI


Spin relaxation in spin light-emitting diodes: effects of magnetic field and temperature

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: Ultrafast Phenomena and Nanophotonics XVII, SPIE, 2013

DOI


Biexcitons in semiconductor quantum dot ensembles

G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, A.S. Bracker, D. Gammon, S.T. Cundiff, physica status solidi (b) (2013), pp. 1753-1759

DOI


Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2013)

DOI


Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures

D.Q. Wang, J.C.H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A.D. Wieck, D.A. Ritchie, A.R. Hamilton, Physical Review B (2013)

DOI


Aharonov–Bohm rings with strong spin–orbit interaction: the role of sample-specific properties

F. Nichele, Y. Komijani, S. Hennel, C. Gerl, W. Wegscheider, D. Reuter, A.D. Wieck, T. Ihn, K. Ensslin, New Journal of Physics (2013)

DOI


Confinement Effects on Biexciton Binding in Semiconductor Quantum Dots Measured with 2D Coherent Spectroscopy

G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, A.S. Bracker, D. Gammon, S.T. Cundiff, in: CLEO: 2013, OSA, 2013

DOI


Coherence of Fine-Structure States of an InAs Quantum Dot Ensemble Studied with 2D Fourier-Transform Spectroscopy

R. Singh, G. Moody, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, S.T. Cundiff, in: Conference on Lasers and Electro-Optics 2012, OSA, 2013

DOI


High-resolution mass spectrometer for liquid metal ion sources

M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, A.D. Wieck, Review of Scientific Instruments (2013)

DOI


Scaling of the Kondo zero-bias peak in a hole quantum dot at finite temperatures

O. Klochan, A.P. Micolich, A.R. Hamilton, D. Reuter, A.D. Wieck, F. Reininghaus, M. Pletyukhov, H. Schoeller, Physical Review B (2013)

DOI


Many-body correlations of electrostatically trapped dipolar excitons

G.J. Schinner, J. Repp, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, A.O. Govorov, A.W. Holleitner, J.P. Kotthaus, Physical Review B (2013)

DOI


On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures

E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology (2013)

DOI


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Leitung

Prof. Dr. Dirk Reuter

Optoelektronische Materialien und Bauelemente

Dirk Reuter
Telefon:
+49 5251 60-5842
Büro:
P8.2.12

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