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Liste im Research Information System öffnen


Efficient frequency conversion by combined photonic–plasmonic mode coupling

N. Weber, S.P. Hoffmann, M. Albert, T. Zentgraf, C. Meier, Journal of Applied Physics (2018)


Tailored UV Emission by Nonlinear IR Excitation from ZnO Photonic Crystal Nanocavities

S.P. Hoffmann, M. Albert, N. Weber, D. Sievers, J. Förstner, T. Zentgraf, C. Meier, ACS Photonics (2018), pp. 1933-1942


Double resonant plasmonic nanoantennas for efficient second harmonic generation in zinc oxide

N. Weber, M. Protte, F. Walter, P. Georgi, T. Zentgraf, C. Meier, Physical Review B (2017)


Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs

T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, 2017

Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

S.V. Poltavtsev, A.N. Kosarev, I.A. Akimov, D.R. Yakovlev, S. Sadofev, J. Puls, S.P. Hoffmann, M. Albert, C. Meier, T. Meier, M. Bayer, Physical Review B (2017)


Ultrathin Nonlinear Metasurface for Optical Image Encoding

F. Walter, G. Li, C. Meier, S. Zhang, T. Zentgraf, Nano Letters (2017), pp. 3171-3175


Zn–VI quasiparticle gaps and optical spectra from many-body calculations

A. Riefer, N. Weber, J. Mund, D.R. Yakovlev, M. Bayer, A. Schindlmayr, C. Meier, W.G. Schmidt, Journal of Physics: Condensed Matter (2017)



Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots

S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, physica status solidi (c) (2016), pp. 292-296

We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations.

Fabrication of fully undercut ZnO-based photonic crystal membranes with 3D optical confinement

S.P. Hoffmann, M. Albert, C. Meier, Superlattices and Microstructures (2016), pp. 397-408



Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators

C.A. Bader, F. Zeuner, M.H.W. Bader, T. Zentgraf, C. Meier, Journal of Applied Physics (2015)



Optical spectrum, perceived color, refractive index, and non-adiabatic dynamics of the photochromic diarylethene CMTE

C. Wiebeler, C.A. Bader, C. Meier, S. Schumacher, Phys. Chem. Chem. Phys. (2014), pp. 14531-14538



Blue-green emitting microdisks using low-temperature-grown ZnO on patterned silicon substrates

M. Ruth, T. Zentgraf, C. Meier, Optics Express (2013)


Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

M. Bürger, R. Kemper, C. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner, D. As, Journal of Crystal Growth (2013), pp. 287-290

Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

Structural enhancement of ZnO on SiO2 for photonic applications

M. Ruth, C. Meier, AIP Advances (2013)


Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots

M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters (2013), pp. 081105

Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement with the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions.


All-optical tunability of microdisk lasers via photo-adressable polyelectrolyte functionalization

K.A. Piegdon, M. Lexow, G. Grundmeier, H. Kitzerow, K. Pärschke, D. Mergel, D. Reuter, A.D. Wieck, C. Meier, Optics Express (2012)


Carrier localization in ZnO quantum wires

P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters (2012)


Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially grown semiconductor microstructures

J. Kampmeier, M. Rashad, U. Woggon, M. Ruth, C. Meier, D. Schikora, K. Lischka, A. Pawlis, Physical Review B (2012)


Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)

R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, physica status solidi (c) (2012), pp. 1028-1031

We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selectivearea- grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.

Scaling coefficient for three-dimensional grain coalescence of ZnO on Si(111)

M. Ruth, C. Meier, Physical Review B (2012)



Electrically driven intentionally positioned single quantum dot

M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, physica status solidi (c) (2011), pp. 1182-1185

Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.

Investigations on the director field around microdisc resonators

M. Urbanski, K.A. Piegdon, C. Meier, H.S. Kitzerow, Liquid Crystals (2011), pp. 475-482



An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters (2010)

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

Anticrossing of Whispering Gallery Modes in microdisk resonators embedded in an anisotropic environment

S. Declair, C. Meier, T. Meier, J. Förstner, Photonics and Nanostructures - Fundamentals and Applications (2010), pp. 273-277

We numerically investigate the behavior of Whispering Gallery Modes (WGMs) in circularly shaped resonators like microdisks, with diameters in the range of optical vacuum wavelengths. The microdisk is embedded in an uniaxial anisotropic dielectric environment. By changing the optical anisotropy, one obtains spectral tunability of the optical modes. The degree of tunability strongly depends on the radial (azimuthal) mode order M (N). As the modes approach each other spectrally, anticrossing is observed, leading to a rearrangement of the optical states.

Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals

M. Mehta, C. Meier, Journal of The Electrochemical Society (2010)


Electroluminescence from silicon nanoparticles fabricated from the gas phase

J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology (2010)


Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode

M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-dimensional Systems and Nanostructures (2010), pp. 2749-2752

An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.

Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator

K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-dimensional Systems and Nanostructures (2010), pp. 2552-2555

GaAs-based semiconductor microdisks with high quality whispering gallery modes (Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs) served as a light source to feed the optical modes at room temperature. In order to achieve frequency tuning of the optical modes, the microdisk devices have been immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic phase below the clearing temperature of TC≈34°C .We have studied the device performance in the temperature rangeof T=20-50°C, in order to investigate the influence of the nematic–isotropic phase transition on the optical modes. Moreover,we havea pplied an AC electric field to the device,which leads in the nematic phase to a reorientation of the anisotropic dielectric tensor of the liquid crystal.This electrical anisotropy can be used to achieve electrical tunability of the optical modes.Using the finite-difference time domain (FDTD) technique with an anisotropic material model, we are able to describe the influence of the liquid crystal qualitatively.

Tuning quantum-dot based photonic devices with liquid crystals

K.A. Piegdon, S. Declair, J. Förstner, T. Meier, H. Matthias, M. Urbanski, H. Kitzerow, D. Reuter, A.D. Wieck, A. Lorke, C. Meier, Optics Express (2010)

Microdisks made from GaAs with embedded InAs quantum dots are immersed in the liquid crystal 4-cyano-4’-pentylbiphenyl (5CB). The quantum dots serve as emitters feeding the optical modes of the photonic cavity. By changing temperature, the liquid crystal undergoes a phase transition from the isotropic to the nematic state, which can be used as an effective tuning mechanism of the photonic modes of the cavity. In the nematic state, the uniaxial electrical anisotropy of the liquid crystal molecules can be exploited for orienting the material in an electric field, thus externally controlling the birefringence of the material. Using this effect, an electric field induced tuning of the modes is achieved. Numerical simulations using the finite-differences time-domain (FDTD) technique employing an anisotropic dielectric medium allow to understand the alignment of the liquid crystal molecules on the surface of the microdisk resonator.


Anticrossing of Whispering Gallery Modes in Microdisk Resonators Embedded in a Liquid Crystal

J. Förstner, S. Declair, C. Meier, T. Meier, in: AIP Conference Proceedings, AIP Conference Proceedings , 2009, pp. 60-62

We numerically investigate Whispering Gallery Modes (WGM) in a subwavelength microdisk resonator [1] embedded in an uniaxial anisotropic liquid crystal environment. It is shown that the WGMs have anticrossing behavior when modes of different radial mode order M or azimuthal order N approach each other spectrally.

Coupling Dynamics of Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator

J. Förstner, C. Meier, K. Piegdon, S. Declair, A. Hoischen, M. Urbanski, T. Meier, H. Kitzerow, in: Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), paper NTuC2, 2009

We experimentally and theoretically investigate microdisk resonators with embedded quantum dots immersed in a liquid crystal in its nematic phase, showing the tunabililty of the photonic modes via external parameters like temperature or electric field.

Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation

W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, A.D. Wieck, Journal of Materials Research (2009), pp. 2179-2184


Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

M. Mehta, M. Ruth, K.A. Piegdon, D. Krix, H. Nienhaus, C. Meier, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (2009)


Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers

K. Huba, D. Krix, C. Meier, H. Nienhaus, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (2009), pp. 889-894



Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters (2008)


Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength

C. Meier, S. Lüttjohann, M. Offer, H. Wiggers, A. Lorke, in: Advances in Solid State Physics, Springer Berlin Heidelberg, 2008, pp. 79-90


Tunable optical properties of photonic crystals and semiconductor microdisks using liquid crystals

K.A. Piegdon, H. Matthias, C. Meier, H. Kitzerow, in: Emerging Liquid Crystal Technologies III, SPIE, 2008



Quantum dots as tunable scatterers for 2D- and 1D-electron systems

B. Marquardt, M. Russ, A. Lorke, C. Meier, D. Reuter, A.D. Wieck, Physica E: Low-dimensional Systems and Nanostructures (2007), pp. 2075-2077


Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap

C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied Physics (2007)


Technique for tilting GaAs photonic crystal nanocavities out of plane

C. Meier, K. Hennessy, Applied Physics Letters (2007)


Temperature-induced crossover between bright and dark exciton emission in silicon nanoparticles

S. Lüttjohann, C. Meier, M. Offer, A. Lorke, H. Wiggers, Europhysics Letters (EPL) (2007)



Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs

I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F. Tegude, Journal of Crystal Growth (2006), pp. 607-611


Quantum dot electrons as controllable scattering centers in the vicinity of a two-dimensional electron gas

M. Russ, C. Meier, B. Marquardt, A. Lorke, D. Reuter, A.D. Wieck, Phase Transitions (2006), pp. 765-770


Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles

H. Nienhaus, V. Kravets, S. Koutouzov, C. Meier, A. Lorke, H. Wiggers, M.K. Kennedy, F.E. Kruis, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (2006)


Raman properties of silicon nanoparticles

C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, H. Wiggers, Physica E: Low-dimensional Systems and Nanostructures (2006), pp. 155-158


Vibrational and defect states in SnOx nanoparticles

C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho, H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics (2006)


Visible resonant modes in GaN-based photonic crystal membrane cavities

C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters (2006)



Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System of InAs Quantum Dots

D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, O. Wibbelhoff, C. Meier, A. Lorke, J.C. Maan, Physical Review Letters (2005)


Emission from neutral and charged excitons in self-organized InAs quantum dots: Band bending vs. Pauli-blocking

S. Lüttjohann, C. Meier, A. Lork, D. Reuter, A.D. Wieck, in: Physics of Semiconductors, 2005, pp. 733

GaN blue photonic crystal membrane nanocavities

Y. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters (2005)


Infrared properties of silicon nanoparticles

V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied Physics (2005)


Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching

E.D. Haberer, C. Meier, R. Sharma, A.R. Stonas, S.P. DenBaars, S. Nakamura, E.L. Hu, physica status solidi (c) (2005), pp. 2845-2848


Optical properties of GaN photonic crystal membrane nanocavities

Y. Choi, C. Meier, R. Sharma, K. Hennessy, E.D. Haberer, Y. Gao, S. Nakamura, E.L. Hu, in: 2005 Pacific Rim Conference on Lasers and Electro-Optics, 2005, pp. 69

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters (2005)


Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters (2005)


Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra

S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005)


Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor

B. Schwenzer, C. Meier, O. Masala, R. Seshadri, S.P. DenBaars, U.K. Mishra, Journal of Materials Chemistry (2005)


Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters (2005)



Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching

E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Applied Physics Letters (2004), pp. 5179-5181


Synthesis of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor

J. Knipping, H. Wiggers, B. Rellinghaus, P. Roth, D. Konjhodzic, C. Meier, Journal of Nanoscience and Nanotechnology (2004), pp. 1039-1044


Wave function mapping of self-assembled quantum dots by capacitance spectroscopy

O. Wibbelhoff, C. Meier, A. Lorke, P. Schafmeister, A. Wieck, Physica E: Low-dimensional Systems and Nanostructures (2004), pp. 516-520



Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs

C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, A. Wieck, Physica E: Low-dimensional Systems and Nanostructures (2003), pp. 503-504


Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs

D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters (2003), pp. 481-483


Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures

C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics (2003), pp. 6100-6106


Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping

D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2003), pp. 585-589


Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy

R.D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, A.D. Wieck, International Journal of Modern Physics B (2003), pp. 1147-1170



A new peak in the bend resistance of a four-terminal device written by FIB implantation

D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica B: Condensed Matter (2002), pp. 1906-1907


Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells

S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics (2002), pp. 6605-6607


Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping

D. Reuter, C. Meier, A. Seekamp, A. Wieck, Physica E: Low-dimensional Systems and Nanostructures (2002), pp. 938-941


Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices

D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002), pp. 377-379


Planar Hall sensors for micro-Hall magnetometry

M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier, Journal of Applied Physics (2002)


Tunable backscattering in quantum Hall systems induced by neighbouring gates

C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A. Wieck, Physica B: Condensed Matter (2002), pp. 1728-1729



Laterally resolved doping by focused ion beam implantation

D. Reuter, C. Meier, M.A. Alvarez, J. Koch, A.D. Wieck, in: IECON Proc. , 2000, pp. 1878

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Prof. Dr. Cedrik Meier

Nanophotonik & Nanomaterialien

Cedrik Meier
+49 5251 60-2672
+49 5251 60-3603

Die Universität der Informationsgesellschaft