Department Physik - Publikationen (Universität Paderborn)

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2021

Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation

E. Evers, N.E. Kopteva, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, npj Quantum Information (2021)

Abstract

DOI

<jats:title>Abstract</jats:title><jats:p>The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron <jats:italic>g</jats:italic> factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble of excited spins into a single Larmor precession mode that is commensurate with the laser repetition frequency. Furthermore, we demonstrate that an optical detuning of the pump pulses from the probed optical transitions induces a directed dynamic nuclear polarization and leads to a discretization of the total magnetic field acting on the electron ensemble. Finally, we show that the highly periodic optical excitation can be used as universal tool for strongly reducing the nuclear spin fluctuations and preparation of a robust nuclear environment for subsequent manipulation of the electron spins, also at varying operation frequencies.</jats:p>

Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography

J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021)

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2020

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020)

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Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings

C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020)

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InAs heteroepitaxy on nanopillar-patterned GaAs (111)A

V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K. Lindner, Journal of Crystal Growth (2020)

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Electrostatic potential shape of gate-defined quantum point contacts

M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020)

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Electrically controlled rapid adiabatic passage in a single quantum dot

A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters (2020), 116, pp. 251103

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2020-06 Widhalm - APL - Electrically controlled RAP in single QD (post-referreing preprint).pdf -

Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020)

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Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020)

Abstract

DOI

<jats:p>The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a recipe for contacts with very low resistance values that remain below 10 Ω for annealing times between 20 and 350 s, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating, temperature ramp rate and gas forming used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.</jats:p>

Strain-driven InAs island growth on top of GaAs(111) nanopillars

T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020)

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Electrical detection of excitonic states by time-resolved conductance measurements

C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020)

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Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off

T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, physica status solidi (a) (2020), n/a(n/a), pp. 2000408

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GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off using selective etching of Al-containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs sacrificial layers (10–50 nm thick) with different aluminum concentrations (x = 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy and high-resolution X-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.

2019

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N

M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, physica status solidi (b) (2019)

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Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth (2019), 512, pp. 164-168

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Germanium doping of cubic GaN grown by molecular beam epitaxy

M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019)

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2018

Ultrafast electric phase control of a single exciton qubit

A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters (2018), 112(11), pp. 111105

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We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse p/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3p within 100 ps which is below the dephasing time of the quantum dot exciton.

Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, 2018

Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates

A. Trapp, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (2018), 36(2)

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MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, 2018

Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks

V. Zolatanosha, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (2018), 36(2)

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Spin inertia of resident and photoexcited carriers in singly charged quantum dots

E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B (2018), 98(12)

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Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, physica status solidi (b) (2018), 255(3), pp. 1600729

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We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.

Theory of spin inertia in singly charged quantum dots

D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B (2018), 98(12)

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Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots

E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2018), 98(7)

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Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures

J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State (2018), 60(8), pp. 1611-1617

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Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

S. Blumenthal, D. Reuter, D.J. As, physica status solidi (b) (2018), 255(5)

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Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2018), 33(9)

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2017

Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth (2017), 481, pp. 7-10

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Optical Properties of Germanium Doped Cubic GaN

D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances (2017), 2(05), pp. 283-288

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Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, physica status solidi (b) (2017), 255(3)

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Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures

V. Zolatanosha, D. Reuter, Microelectronic Engineering (2017), 180, pp. 35-39

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InAs heteroepitaxy on GaAs patterned by nanosphere lithography

V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, 2017

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth (2017), 470, pp. 46-50

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Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography

T. Riedl, V.. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, 2017

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, physica status solidi (b) (2017), 255(5)

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Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures

T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth (2017), 477, pp. 149-153

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Spin dynamics of quadrupole nuclei in InGaAs quantum dots

M.S. Kuznetsova, R.V. Cherbunin, I.Y. Gerlovin, I.V. Ignatiev, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2017), 95(15)

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Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs

T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, 2017

Incorporation of germanium for n-type doping of cubic GaN

M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, physica status solidi (b) (2017), 254(8)

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Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact

A. Srinivasan, D. Miserev, K. Hudson, O. Klochan, K. Muraki, Y. Hirayama, D. Reuter, A. Wieck, O. Sushkov, A. Hamilton, Physical Review Letters (2017), 118(14)

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2016

Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots

S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, physica status solidi (c) (2016), 13(5-6), pp. 292-296

Abstract

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We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations.

Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization

A.R. Onur, J.P. de Jong, D. O'Shea, D. Reuter, A.D. Wieck, C.H. van der Wal, Physical Review B (2016), 93(16)

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Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy

P.S. Sokolov, M.Y. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, A.D. Wieck, Physical Review B (2016), 93(4)

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Heat flow, transport and fluctuations in etched semiconductor quantum wire structures

C. Riha, O. Chiatti, S.S. Buchholz, D. Reuter, A.D. Wieck, S.F. Fischer, physica status solidi (a) (2016), 213(3), pp. 571-581

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From Localised to Ballistic Excitons in GaAs Quantum Wells

F. Pulizzi, P. Christianen, J. Maan, S. Eshlaghi, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), pp. 397-402

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Phase sensitive properties and coherent manipulation of a photonic crystal microcavity

W. Quiring, B. Jonas, J. Förstner, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Optics Express (2016), 24(18), pp. 20672-20684

Abstract

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We present phase sensitive cavity field measurements on photonic crystal microcavities. The experiments have been performed as autocorrelation measurements with ps double pulse laser excitation for resonant and detuned conditions. Measured E-field autocorrelation functions reveal a very strong detuning dependence of the phase shift between laser and cavity field and of the autocorrelation amplitude of the cavity field. The fully resolved phase information allows for a precise frequency discrimination and hence for a precise measurement of the detuning between laser and cavity. The behavior of the autocorrelation amplitude and phase and their detuning dependence can be fully described by an analytic model. Furthermore, coherent control of the cavity field is demonstrated by tailored laser excitation with phase and amplitude controlled pulses. The experimental proof and verification of the above described phenomena became possible by an electric detection scheme, which employs planar photonic crystal microcavity photo diodes with metallic Schottky contacts in the defect region of the resonator. The applied photo current detection was shown to work also efficiently at room temperature, which make electrically contacted microcavities attractive for real world applications.

2016-09 Förstner,Reuter,Zrenner_Phase sensitive properties and coherent manipulation of a photonic crystal microcavity.pdf -

Evidence of Singlet-Triplet Crossing in Photoluminescence of Positively Charged Excitons in GaAs Quantum Wells

L. Bryja, A. Wójs, J. Jadczak, J. Misiewicz, P. Płochocka, M. Potemski, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), pp. 1073-1077

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Electric field distribution and exciton recombination line shape in GaAs

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Materials Research Express (2016), 3(5)

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Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers

S. Tiemeyer, M. Bombeck, H. Göhring, M. Paulus, C. Sternemann, J. Nase, F.J. Wirkert, J. Möller, T. Büning, O.H. Seeck, D. Reuter, A.D. Wieck, M. Bayer, M. Tolan, Nanotechnology (2016), 27(42)

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Exciton Exchange between Nearly-Free and Acceptor-Bound States of a Positive Trion Assisted by Cyclotron Excitation

J. Jadczak, L. Bryja, A. Wójs, G. Bartsch, D. Yakovlev, M. Bayer, P. Plochocka, M. Potemski, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), 119(5), pp. 600-601

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Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots

S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T. Meier, A. Zrenner, M. Bayer, Applied Physics B (2016), 122(1)

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Spins in semiconductor quantum dots have been considered as prospective quantum bit excitations. Their coupling to the crystal environment manifests itself in a limitation of the spin coherence times to the microsecond range, both for electron and hole spins. This rather short-lived coherence compared to atomic states asks for manipulations on timescales as short as possible. Due to the huge dipole moment for transitions between the valence and conduction band, pulsed laser systems offer the possibility to perform manipulations within picoseconds or even faster. Here, we report on results that show the potential of optical spin manipulations with currently available pulsed laser systems. Using picosecond laser pulses, we demonstrate optically induced spin rotations of electron and hole spins. We further realize the optical decoupling of the hole spins from the nuclear surrounding at the nanosecond timescales and demonstrate an all-optical spin tomography for interacting electron spin sub-ensembles.

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal of Applied Physics (2016), 55(5S)

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A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

N. Sharma, D. Reuter, Journal of Crystal Growth (2016), 477, pp. 225-229

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Thermal energy and charge currents in multi-terminal nanorings

T. Kramer, C. Kreisbeck, C. Riha, O. Chiatti, S.S. Buchholz, A.D. Wieck, D. Reuter, S.F. Fischer, AIP Advances (2016), 6(6)

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Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

P. Sitarek, K. Ryczko, J. Misiewicz, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), 120(5), pp. 849-851

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From Localised to Ballistic Excitons in GaAs Quantum Wells

F. Pulizzi, P. Christianen, J. Maan, S. Eshlaghi, D. Reuter, A. Wieck, Acta Physica Polonica A (2016), pp. 397-402

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2015

Photonic crystal cavities with metallic Schottky contacts

W. Quiring, M. Al-Hmoud, A. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Applied Physics Letters (2015), 107(4)

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We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5K and 310K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

A. Finke, M. Ruth, S. Scholz, A. Ludwig, A.D. Wieck, D. Reuter, A. Pawlis, Physical Review B (2015), 91(3)

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Robust Population Inversion by Polarization Selective Pulsed Excitation

D. Mantei, J. Förstner, S. Gordon, Y.A. Leier, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Scientific Reports (2015), 5(1), pp. 10313

Abstract

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The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.

2015-05 Mantei,Förstner,Gordon,Leier,Rai,Reuter,Wieck,Zrenner_Robust Population Inversion by Polarization Selective Pulsed Excitation.pdf -

Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice

T. Jostmeier, T. Wecker, D. Reuter, D.J. As, M. Betz, Applied Physics Letters (2015), 107(21)

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Spatially indirect transitions in electric field tunable quantum dot diodes

A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, physica status solidi (b) (2015), 253(3), pp. 437-441

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We analyse an InAs/GaAs-based electric ﬁeld tunable single quantum dot diode with a thin tunnelling barrier between a buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between conﬁned holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.

Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process

M. Bürger, J. Lindner, D. Reuter, D.J. As, physica status solidi (c) (2015), 12(4-5), pp. 452-455

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We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on 3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes and densities were obtained from uncapped samples by atomic force microscopy. These results were correlated with similar but capped samples by photoluminescence experiments. The QD density varies by one order of magnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer thickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison between the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov growth mode as the main formation process of the cubic GaN QDs.

Nuclear spin polarization in the electron spin-flip Raman scattering of singly charged (In,Ga)As/GaAs quantum dots

J. Debus, D. Kudlacik, V.F. Sapega, D. Dunker, P. Bohn, F. Paßmann, D. Braukmann, J. Rautert, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2015), 92(19)

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Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots

M. Mehta, D. Reuter, M. Kamruddin, A.K. Tyagi, A.D. Wieck, Nano (2015), 10(04)

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Transform-limited single photons from a single quantum dot

A.V. Kuhlmann, J.H. Prechtel, J. Houel, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Nature Communications (2015), 6(1)

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Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

J.C.H. Chen, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis, D.A. Ritchie, K. Trunov, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters (2015), 106(18)

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2014

Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, physica status solidi (b) (2014), 252(5), pp. 873-878

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All-optical implementation of a dynamic decoupling protocol for hole spins in (In,Ga)As quantum dots

S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014), 90(12)

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Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pumping

M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, M.Y. Petrov, I.V. Ignatiev, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014), 89(12)

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Magnetoconductance of a magnetic double barrier in a quantum wire

B. Schüler, M. Cerchez, H. Xu, T. Heinzel, D. Reuter, A. Wieck, Superlattices and Microstructures (2014), 79, pp. 54-62

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Excitation of complex spin dynamics patterns in a quantum-dot electron spin ensemble

S. Varwig, I.A. Yugova, A. René, T. Kazimierczuk, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014), 90(12)

DOI

Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy

T. Henn, T. Kießling, L.W. Molenkamp, D. Reuter, A.D. Wieck, K. Biermann, P.V. Santos, W. Ossau, physica status solidi (b) (2014), 251(9), pp. 1839-1849

DOI

All-optical tomography of electron spins in (In,Ga)As quantum dots

S. Varwig, A. René, S.E. Economou, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T.L. Reinecke, M. Bayer, Physical Review B (2014), 89(8)

DOI

Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process

M. Bürger, J. Lindner, D. Reuter, D. As, 2014

Confocal shift interferometry of coherent emission from trapped dipolar excitons

J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U. Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters (2014), 105(24)

DOI

Magnetic properties of Gd-doped GaN

S. Shvarkov, A. Ludwig, A.D. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H. Becker, D. Rogalla, D. Reuter, physica status solidi (b) (2014), 251(9), pp. 1673-1684

DOI

Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe

Y. Kim, D. Sleiter, K. Sanaka, D. Reuter, K. Lischka, Y. Yamamoto, A. Pawlis, Current Applied Physics (2014), 14(9), pp. 1234-1239

DOI

Observation of quantum states without a semiclassical equivalence bound by a magnetic field gradient

B. Schüler, M. Cerchez, H. Xu, J. Schluck, T. Heinzel, D. Reuter, A.D. Wieck, Physical Review B (2014), 90(20)

DOI

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

F. Lo, C. Huang, K. Chou, J. Guo, H. Liu, V. Ney, A. Ney, S. Shvarkov, S. Pezzagna, D. Reuter, C. Chia, M. Chern, A.D. Wieck, J. Massies, Journal of Applied Physics (2014), 116(4)

DOI

Direct Quantitative Electrical Measurement of Many-Body Interactions in Exciton Complexes in InAs Quantum Dots

P. Labud, A. Ludwig, A. Wieck, G. Bester, D. Reuter, Physical Review Letters (2014), 112(4)

DOI

Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

J. Debus, V.F. Sapega, D. Dunker, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2014), 90(23)

DOI

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

D.J. Carrad, A.M. Burke, O. Klochan, A.M. See, A.R. Hamilton, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Physical Review B (2014), 89(15)

DOI

Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks

M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, D.J. As, physica status solidi (c) (2014), 11(3-4), pp. 790-793

DOI

2013

Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2013), 87(23)

DOI

Hot carrier effects on the magneto-optical detection of electron spins in GaAs

T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B (2013), 88(8)

DOI

Optical Spectroscopy of Spin Noise

V.S. Zapasskii, A. Greilich, S.A. Crooker, Y. Li, G.G. Kozlov, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review Letters (2013), 110(17)

DOI

Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy

G. Moody, R. Singh, H. Li, I. Akimov, M. Bayer, D. Reuter, A. Wieck, S. Cundiff, Solid State Communications (2013), 163, pp. 65-69

DOI

Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots

A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B (2013), 88(20)

DOI

Hot carrier effects on the magneto-optical detection of electron spins in GaAs

T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B (2013), 88(8)

DOI

The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter (2013), 25(32)

DOI

Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters (2013), 103(9)

DOI

Spin relaxation length in quantum dot spin LEDs

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, physica status solidi (c) (2013), 10(9), pp. 1214-1217

DOI

Charge noise and spin noise in a semiconductor quantum device

A.V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M. Poggio, R.J. Warburton, Nature Physics (2013), 9(9), pp. 570-575

DOI

Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects

H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: Spintronics VI, SPIE, 2013

DOI

Origins of conductance anomalies in ap-type GaAs quantum point contact

Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A.D. Wieck, Physical Review B (2013), 87(24)

DOI

Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells

G.J. Schinner, J. Repp, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, A.O. Govorov, A.W. Holleitner, J.P. Kotthaus, Physical Review Letters (2013), 110(12)

DOI

Anisotropic Zeeman shift in p-type GaAs quantum point contacts

Y. Komijani, M. Csontos, I. Shorubalko, U. Zülicke, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, EPL (Europhysics Letters) (2013), 102(3)

DOI

Observation of the Kondo effect in a spin-3/2 hole quantum dot

O. Klochan, A. Micolich, A. Hamilton, K. Trunov, D. Reuter, A. Wieck, in: COMMAD 2012, IEEE, 2013

DOI

Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum

Y. Komijani, T. Choi, F. Nichele, K. Ensslin, T. Ihn, D. Reuter, A.D. Wieck, Physical Review B (2013), 88(3)

DOI

Evidences of defect contribution in magnetically ordered Sm-implanted GaN

F. Lo, J. Guo, C. Huang, K. Chou, H. Liu, V. Ney, A. Ney, M. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current Applied Physics (2013), 14, pp. S7-S11

DOI

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Leitung

Prof. Dr. Dirk Reuter

Optoelektronische Materialien und Bauelemente

Telefon:

+49 5251 60-5842

E-Mail:

dirk.reuter(at)upb(dot)de

Büro:

P8.2.12