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Oxford Instruments Plasmalab System 100:

RIE plasma process system with inductively coupled plasma ICP 180 for reactive ion etching
- Automatic wafer loading; max. wafer size 100 mm
- Available process gases: C₄F₈, SF₆, O₂, Ar, CHF₃, CF₄, He
- RF power: max 300 W @ 13.56 MHz
- ICP power: max 3000 W @ 13.56 MHz

Oxford Instruments Plasmalab 80plus (PECVD):

PECVD plasma process system for deposition of insulating and semiconducting films
- Available process gases: SiH₄/Ar (2%/98%), NH₃, N₂O, N₂, CF₄
- Heatable specimen table: max. 400°C
- Wafer size max. 50 mm (homogeneous plasma)
- RF power max: 400 W @13.56 MHz

Optical measurement of static and dynamic contact angles on solid surfaces (sessile drop method), Determiantion of surface energies of solids and surface tension of liquids (pendant drop method)
- Lift table (z axis)
- Software controlled double dose unit
- Zoom objective, camera (resolution 656x492 px)