Oxford Instruments Plasmalab 80plus (RIE):

RIE plasma process system with inductively coupled plasma ICP 65 for reactive ion etching
- Available process gases: SiCl4, SF6, O2, Ar, Cl2, CH4, H2
- Wafer size max. 50 mm (homogeneous plasma)
- RF power: max 400 W @ 13.56 MHz
- ICP power: max 300 W @ 13.56 MHz

Oxford Instruments Plasmalab 80plus (PECVD):

PECVD plasma process system for deposition of insulating and semiconducting films
- Available process gases: SiH4/Ar (2%/98%), NH3, N2O, N2, CF4
- Heatable specimen table: max. 400°C
- Wafer size max. 50 mm (homogeneous plasma)
- RF power max: 400 W @13.56 MHz