Ak­tu­el­le Pu­bli­ka­ti­o­nen

• M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hoffmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann ,
  Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1-xN
  ACS Applied Materials & Interfaces 15, 39513 2023, https://doi.org/10.1021/acsami.3c06319
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
  Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part II: Absorption edge shift with gain and temperature effects
  J. Appl. Phys. 134, 075703 (2023), https://doi.org/10.1063/5.0153092
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
  Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part I: Determination of the dielectric function
  J. Appl. Phys. 134, 075702 (2023), https://doi.org/10.1063/5.0153091
•  

• M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hoffmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann ,
  Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1-xN
  ACS Applied Materials & Interfaces 15, 39513 2023, https://doi.org/10.1021/acsami.3c06319
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
  Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part II: Absorption edge shift with gain and temperature effects
  J. Appl. Phys. 134, 075703 (2023), https://doi.org/10.1063/5.0153092
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
  Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part I: Determination of the dielectric function
  J. Appl. Phys. 134, 075702 (2023), https://doi.org/10.1063/5.0153091
• M. Meier, M.Littmann, J. Bürger, T. Riedl, D. Kool, J.Lindener, D. Reuter, D.J. As
  Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
  Physica Status Solidi (b) - 260, 2200508 (2023), https://doi.org/10.1002/pssb.202200508
• M. Littmann, D. Reuter, D.J. As
  Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy
  Physica Status Solidi (b) 260, 230034 (2023), https://doi.org/10.1002/pssb.202300034

• F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As
  Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
  Physica Status Solidi (b) (2022), https://doi.org/10.1063/5.0053865
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
  Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
  arXiv:2206.02223v1 [cond-mat.mtrl-sci] 5 Jun 2022), http://arxiv.org/abs/2206.02223.

• F. Meier, M. Potte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As
  Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001)
  AIP Advances 11, 075013 (2021), doi.org/10.1063/5.0053865
• M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, C.M. Schneider, M. Cinchetti
  Estremely low energy ARPES of quantum well states in cubic GaN/AlN and GaAs/GaAlAs heterostructures
  Scientific Reports 11, 19081 (2021), https://doi.org/10.1038/s41598-021-98569-6
• E. Baron, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, M. Feneberg
  Optical evidence of many-body effects in zincblende AlxGa1-xN alloy systems
  Journal of Physics D: Applied Physics 54, 025101 (2021), doi.org/10.1088/1361-6463/abb97a

• M. Deppe, T. Henksmeier, D. Reuter, D. J. As
  Molecular Beam Epitaxy Growth and Characterisation of Germanium Doped Cubic AlxGa1-xN
  Phys. Stat. Sol. B 257, 1900532 (2020), DOI: 10.1002/pssb.201900532
• E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
  Photoluminescence line shape analysis of highly n-type doped zincblende GaN
  Phys. Stat. Sol. B 257, 1900522 (2020), DOI: 10.1002/pssb.201900522
• A. Beloufa, D. Bouguenna, N. Kermas, D.J. As
  A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1-xN/AlN/GaN MOS-HEMTs
  Journal of Electronic Materials.49 (3), 2008 (2020), doi.org/10.1007/s11664-019-07927-8

• J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolf:
  Optical excitiation density dependence of spin dynamics in bulk cubic GaN
  J. Appl. Phys. 126, 153901 (2019); doi.org/10.1063/1.5123914
• E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
  Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1x1020cm-3
  Phys. Rev. Mat. 3, 104603 (2019); doi: 10.1103/PhysRevMaterials.3.104603
• M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, and D.J. As
  Germanium doping of cubic GaN brown by molecular beam epitaxy
  J. Appl. Phys. 125, 095703 (2019); doi: 10.1063/1.5066095

• D.J. As and K. Lischka:
  Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
  Molecular Beam Epitaxy, 2^nd Ed. , Edt. M. Hennini, Elsevier (2018), Chaper 6, p. 95-114 DOI: https://doi.org/10.1016/B978-0-12-812136-8.00006-2
• S. Blumenthal, D. Reuter, D.J. As:
  Optical properties of cubic GaN quantum dot pairs grown by molecular beam epitaxy
  Phys. Stat. Sol. (b) 255 (5), 1700457 (2018) online
• T. Wecker, C. Callsen, A. Hoffmann, D. Reuter, D.J. As:
  Correlation of decay time and barrier thickness for asymmetric cubic GaN/Al_0.64Ga_0.36N double quantum wells
  Phys. Stat. Sol. (b) 255 (5), 1700373 (2018) online
• L.K.S. Herval, M.P.F. Godoy, T. Wecker, D.J. As:
  Investigation on interface-related defects by photoluminecence of cubic (Al)GaN/AlN multi-quantum wells structures
  J.  Luminescence 198, 309 (2018) online
• S. Blumenthal, D. Reuter, D.J. As:
  Stacked self-assembled cubic GaN quantum dots grown by molecular beam epitaxy
  Phys. Stat. Sol. (b) 255 (3), 1600729 (2018) online

• T. Wecker, T. Jostmeier, T. Rieger, E. Neumannn, A. Pawlis, M. Betz, D. Reuter, D.J. As:
  Linear and Nonlinear Behaviour of Intersubband Transitions in IR of Cubic GaN/AlN Multi Quantum Well Structures
  J. Crystal Growth 477, 149 (2017) online
• M.Deppe, J. W. Gerlach, D. Reuter, D.J. As:
  Incorporation of germanium for n-type doping of cubic GaN
  Phys. Stat. Sol. (b) 254 (8), 1600700 (2017) online
• T. Cerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov, M. Bayer:
  Picosecond acoustics experiments with cubic GaN/AlGaN single quantum wells
  Phys. Rev. Appl. 7, 014006 (2017) DOI: 10.1103/PhysRevApplied.7.014006
• D.J. As, M. Deppe, J.W. Gerlach and D. Reuter:
  Optical Properties of Germanium Doped Cubic GaN
  MRS Advances 637 (5), 283 (2017) first view DOI: 10.1557/adv.2016.6437

• J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele and J. Rudolph:
  Electron spin dynamics in bulk cubic GaN
  Phys. Rev. B 94, 235202 (2016) online
• V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues, E. Abramof, D. Schikora, D.J. As, K. Lischka:
  Magnetic und structural properties of Fe-implated cubic GaN
  J. Appl. Phys. 120 (10), 103901 (2016) online
• D. Bouguenma, T. Wecker, D.J. As, N. Kermas, A. Beloufa:
  Numerical analysis of transmission coefficient, LDOS and DOS in superlattice nanostructures of cubic Al_xGa_1-xN/GaN resonant tunneling MODFETs
  J. of Computational Electronics, 15 1 (2016) online
• C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H-W. Becker, D.J. As, H.C. Hofsäss, A.D. Wieck, A. Ludwig:
  Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots
  Nucl. Instr. Meth. B 383, 1 (2016) online
• S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter and  D.J. As:
  Fabrication and Characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots
  phys. stat. sol. (c) 13, No. 5–6, 292–296 (2016) online
• T. Wecker, G. Callsen, A. Hoffmann, D. Reuter and D.J. As:
  Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al_0.25Ga_0.75N double quantum well grown by molecular beam epitaxy
  Jap. J. Appl. Phys. 55, 05FG01 (2016) online
• M. Rüsing, T. Wecker, G. Berth, D.J. As, and A. Zrenner:
  Joint Raman spectrosopy and HRXRD investigation of cubic Gallium nitride layers grown on 3C-SiC
  phys. stat. sol. (b) 253, 778 (2016) online
• S. Sergent, S. Kako, M. Bürger, S. Blumenthal, S. Iwamoto, D.J. As and Y. Arakawa:
  Active Zinc-Blende III-Nitride Photonic Structures on Silicon
  Appl. Phys. Express 9, 012002 (2016) online 

• J.H. Buß, T. Schupp, D.J. As, D.J. Hägele and J. Rudolph:
  Temperature dependence of the electron Landé g-factor in cubic GaN
  J. Appl. Phys. 118, 225701 (2015)
• T. Jostmeier, T. Wecker, D. Reuter, D.J. As, and M. Betz:
  Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice
  Appl. Phys. Lett. 107, 211101 (2015)
• T. Wecker, H. Hörich, M. Feneberg, R. Goldhahn, D. Reuter and  D.J. As:
  Structural and optical properties of MBE grown asymmetric cubic GaN/AlxGa1-xN double quantum wells
  phys. stat. sol. (b) 252 (5), 873 (2015)
• R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, J.K.N. Lindner and  D.J. As:
  STEM-CL investigations on the influence of stacking faults on the optical properties of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
  phys. stat. sol. (c) 12 (4-5), 469 (2015)
• M. Bürger, J.K.N. Lindner, D. Reuter and  D.J. As:
  Investigation of cubic GaN quantum dots grown by the Stranski-Krastanaov process
  phys. stat. sol. (c) 12 (4-5), 452 (2015)
• A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D.J. Hägele, and J. Rudolf:
  Strain dependent electron spin dynamics in bulk cubic GaN
  J. Appl. Phys. 117, 093906 (2015)

• D.J. As, R.M. Kemper, C. Mietze, T. Wecker, J.K.N. Lindner, P. Veit, A. Dempewolf, F. Bertram, J. Christen:
  Spacially Resolved Optical Emission of Cubic GaN/AlN Multi-Quantum Well Structures
  MRS Symp. Proc. Vol. 1736 E, T3.03 (2014)
• S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
  Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots
  Phys. Rev. B 90, 235312 (2014)
• J.H. Buß. A. Schaefer, T. Schupp, D.J. As, D.J. Hägele, and J. Rudolf:
  High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature
  Appl. Phys. Lett. 105, 182404 (2014)
• S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
  Excitonic complexes in single Zinc-Blende GaN/AlN Quantum Dots Grown by Droplet Epitaxy
  Appl. Phys. Lett. 105, 141112 (2014)
• M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, and D.J. As:
  Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks
  phys. stat. sol. (c) 11 (3-4), 790 (2014)
• A.D. Rodrigues, M.P.F. de Godoy, C. Mietze, and D.J. As:
  Phonon localization in cubic GaN/AlN superlattices
  Solid State Comunications 186, 18 (2014)
• L. Hiller, T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As and J. Pezoldt:
  Hydrogen Effects in ECR-etching of 3C-SiC(100) Mesa structures
  Materials Science Forum Vols. 778-780, 730 (2014)
• R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As and J.K.N. Lindner:
  Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)
  phys. stat. sol. (c) 11 (2), 265 (2014)
• S. Kako, M. Holmes, S. Sergent, M. Bürger, D.J. As, and Y. Arakawa:
  Single-Photon Emission from Cubic GaN Quantum Dots
  Appl. Phys. Lett. 104, 011101 (2014)

• S. Sergent, S. Kako, M. Bürger, D.J. As, and Y. Arakawa:
  Narrow Spectral Linewidth of Single Zinc-Blende GaN/AlN Self-Assembled Quantum Dots
  Appl. Phys. Lett. 103, 151109 (2013)
• D. Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As:
  Comparative study on performance of cubic Al_xGa_1-xN/GaN nanostructures MODFETs and MOS-MODFETs
  Superlattices and Microstructures 62, 260 (2013)
• M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter and D.J. As:
  Lasing properties of non-polar GaN quantum dots in cubic AlN microdisk cavities
  Appl. Phys. Lett 103, 021107 (2013)
• M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, R. Goldhahn:
  Transition energies and direct-indirect band gap crossing in zinc-blende Al_xGa_1-xN
  Phys. Rev. B 87, 195210 (2013)
• M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier and D.J. As:
  Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
  Appl. Phys. Lett. 102, 081105 (2013)
• R.M. Kemper, D.J. As and J.K.N. Lindner:
  Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
  in "Silicon-based Nanomaterials" edt.H. Li, J. Wu, Z.M. Wang, Springer Series in Materials Sciences 187, chapter 15, 381-405 (2013), ISBN 978-1-4614-8168-3, DOI: 10.1007/978-1-4614-8169-0
• D.J. As, A. Zado, Q.Y. Wei, T. Li, J.Y. Huang, F.A. Ponce:
  Capacity Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions
  Jap. J. Appl. Phys. 52 (8), 08JN04 (2013)
• R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As and J.K.N. Lindner:
  Growth of cubic GaN on 3C-SiC/Si (001) nanostructures
  Journal of Crystal Growth 378, 291 (2013)
• M. Bürger, R.M. Kemper, C. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner and  D.J. As:
  Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
  Journal of Crystal Growth 378, 287 (2013)
• D.J. As and C. Mietze: (invited paper)
  MBE growth and applications of cubic AlN/GaN quantum wells
  phys. stat. sol. (a) 210, 474 (2013)
• A. Zado and  D.J. As:
  Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C-SiC substrates
  phys. stat. sol. (c) 10 (3), 486 (2013)
• C. Mietze, M. Bürger, S. Sakr, M. Thernycheva, F.H. Julien, and  D.J. As:
  Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers
  phys. stat. sol. (a) 210 (3), 455 (2013)
• D.J. As, K. Lischka: (invited)
  Nonpolar cubic III-nitrides: from the basics of growth to device applications
  in "Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots; From Research to Mass Production" edt. M. Henini, Elsevier (2013), chapter 11, p 203  (ISBN 9780123878397, http://dx.doi.org/10.1016/B978-0-12-387839-7.00011-7)

• D. Bouguenna, A. Boudghene Stambouli, A. Zado, D.J. As, N. Mekkakia Maaza:
  2D Simulations of current-voltage characteristics of cubic Al_xGa_1-xN/GaN modulation doped hetero-junction field effect transistor structures
  Electrical and Electronic Engineering 2 (5), 309 (2012)
• M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn:
  Optical properties of cubic GaN from 1 to 20 eV
  Phys. Rev. B 85, 155207 (2012)
• M. Bürger, T. Schupp, K. Lischka and  D.J. As:
  Cathodoluminescence spectroscopy of zinc-blende GaN quantum dots
  phys. stat. sol. (c) 9 (5), 1273 (2012)
• Q.Y. Wei, T. Li, J.Y. Huang, F.A. Ponce, E. Tschumak, A. Zado, D.J. As:
  Free carrier accumulation at cubic AlGaN/GaN heterojunction
  Appl. Phys. Lett 100, 142108 (2012)
• A. Zado, K. Lischka and  D.J. As:
  Electrical properties of MBE grown Si₃N₄ - cubic GaN MIS structures
  phys. stat. sol. (c) 9 (3-4), 1088  (2012)
• R. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As and J.K.N. Lindner:
  Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
  phys. stat. sol. (c) 9 (3-4), 1028 (2012)
• C. Mietze, K. Lischka and  D.J. As:
  Current-voltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3C-SiC
  phys. stat. sol. (a) 209 (3), 439 (2012).
• A. Zado, J. Gerlach and D.J. As:
  Low interface trapped charge density in MBE in situ grown Si₃N₄  cubic GaN MIS structures
  Semicond. Sci. Technol. 27, 035020 (2012)
• J. Pezoldt, R. Grieseler, T. Schupp, D.J. As, P. Schaaf:
  Mechanical Properties of cubic SiC, GaN and AlN thin Films
  Materials Science Forum Vols. 717-720, 513 (2012)
• L. Hiller. T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt:
  ECR-Etching of Submicron and Nanometer sized 3C-SiC (100) Mesa Structures
  Materials Science Forum Vols. 717-720, 901 (2012)

• R.M. Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, and D.J. As:
  Anti-phase domains in cubic GaN
  J. Appl. Phys. 110, 123512 (2011)
• R. Granzner, E. Tschumak, M. Kittler, K. Tonisch, W. Jatal, J. Pezoldt, D.J. As and F. Schwierz:
  Vertical design of cubic GaN-based high electron mobility transistors
  J. Appl. Phys. 110, 114501 (2011)
• C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka and  D.J. As:
  Band offsets in cubic GaN/AlN superlattices
  Phys. Rev. B 83, 195301 (2011)
• J.H. Buß, J. Rudolf, T. Schupp, D.J. As, K. Lischka, and D. Hägele:
  Long room-temperature electron spin lifetimes in bulk cubic GaN
  Proc. of SPIE Vol. 7937, 793711 (2011) (invited paper)
• H. Machhadani, M. Tchernycheva, L. Rigutti, S. Saki, R. Colombelli, C. Mietze, D.J. As and F.H. Julien:
  Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to THz spectral range
  Phys. Rev. B 83, 075313 (2011)
• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
  Molcular beam epitaxy based growth of cubic GaN quantum dots
  phys. stat. sol. (c) 8 (5), 1495 (2011)
• R.M. Kemper, M. Weinl. C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.K.N. Lindner, K. Lischka, D.J. As:
  Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates
  Journal of Crystal Growth 323, 84 (2011)
• T. Schupp, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
  Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation
  Journal of Crystal Growth 323, 286 (2011)
• A. Zado, E. Tschumak, J. Gerlach, K. Lischka, and D.J. As:
  Carbon as an acceptor in cubic GaN/3C-SiC
  Journal of Crystal Growth 323, 88 (2011)
• C. Mietze, E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As:
  Intrasubband transitions in cubic AlN/GaN superlatices for detectors from near to far infrared
  phys. stat. sol. (c) 8 (4), 1204 (2011)

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
  Growth of cubic GaN quantum dots
  AIP Conf. Proc. 1292, 165 (2010)
• C. Mietze, E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As:
  Band offset between cubic GaN and AlN from intra- and interband spectroscopy of superlattices
  AIP Conf. Proc. 1292, 169 (2010)
• A. Zado, E. Tschumak, J. Gerlach, K. Lischka, and D.J. As:
  Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr₄
  AIP Conf. Proc. 1292, 181 (2010)
• E. Tschumak: (invited paper)
  Cubic AlGaN/GaN hetero-Junction Field-Effect Transitors with Normally-on and Normally-off Chracteristics
  AIP Conf. Proc. 1292, 159 (2010)
• J.H. Buß, J. Rudolf, T. Schupp, D.J. As, K. Lischka, and D. Hägele:
  Long room-temperature electron spin lifetimes in highly doped cubic GaN
  Appl. Phys. Lett. 97, 062101 (2010)
• T. Schupp, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
  Droplet epitaxy of zinc-blende GaN quantum dots
  Journal of Crystal Growth 312, 3235 (2010)
• E. Tschumak, R. Granzer, J.K.N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and D.J. As:
  Nonpolar cubic AlGaN/GaN HFETs on Ar⁺ implanted 3C-SiC (001)
  Appl. Phys. Lett. 96, 253501 (2010)
• R. Kudrawiec, E. Tschumak, J. Misiewicz, and D.J. As:
  Contactless electro-reflectance study of Fermi-level pinning at the surface of cubic GaN
  Appl. Phys. Lett. 96, 241904 (2010)
• D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, K. Lischka:
  Cubic AlGaN/GaN Hetero-field effect tranistors with normally on and normally off operation
  MRS Symp. Proc. Vol. 1202, I04-08 (2010)
• D.J. As:
  Recent developments on non-polar cubic group III-nitrides for optoelectronic applications
  Proc. of SPIE Vol. 7608, 76080G (2010) (invited paper)
• T. Schupp, K. Lischka and D.J. As:
  MBE growth of atomically smooth cubic AlN
  J. Crystal Growth 312, 1500 (2010)
• D.J. As, H. Pöttgen, E. Tschumak, and K. Lischka:
  Electronic properties of nonpolar cubic GaN MOS structures
  phys. stat. sol. (c) 7 (7-8), 1988 (2010)
• T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, N. Esser, C. Cobet, K. Lischka, and D.J. As:
  MBE growth of cubic AlN on 3C-SiC substrate
  phys. stat. sol. (a), 207 (6), 1365 (2010)
• A. Scholle, S. Greulich-Weber, D.J. As, C. Mietze, N.T. Son, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt:
  Magnetic characterization of conductance electrons in GaN
  phys. stat. sol. (b) 247 (7), 1728 (2010)
• T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, K. Lischka, and D.J. As:
  Growth of atomically smooth cubic AlN by molecular beam epitaxy
  phys. stat. sol. (c) 7 (1), 17 (2010)
• E. Tschumak, J.K.N. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and D.J. As:
  Nonpolar cubic AlGaN/GaN HFETs grown by MBE on Ar⁺ implanted 3C-SiC (001)
  phys. stat. sol. (c) 7 (1), 104 (2010)
• A. Zado, E. Tschumak, K. Lischka, and D.J. As:
  Electrical characterization of an interface n-type conduction channel in cubic AlGaN/GaN heterostructures
  phys. stat. sol. (c) 7 (1), 52 (2010)
• C. Mietze, E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As:
  Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC
  phys. stat. sol. (c) 7 (1), 64 (2010)
• F. Niebelschütz, K. Bruecker, W. Jatal, E. Tschumak, D.J. As, A. Hein, and J. Pezoldt,  :
  Resonant MEMS based on cubic GaN layers
  phys. stat. sol. (c) 7 (1), 116 (2010)

Publications in 2009: 

• M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, and D.J. As:
  Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
  J. Appl. Phys. 106, 076104 (2009)
• K. Lorenz, I.S. Roqan, N. Franco, K.P. O´Donnell, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova:
  Europium doping of cubic (zincblende) GaN by ion implantation
  J. Appl. Phys. 105, 113507 (2009)
• D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka:
  Schottky and ohmic contacts on non-polar cubic GaN epilayers
  MRS. Symp. Proc. Vol. 1108, A01-02 (2009)
• E. Tschumak, K. Tonisch, J. Pezoldt,  D.J. As:
  Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates
  Proc. ECSCRM-2008 in Materials Science Forum Vols. 615-617 (2009) 943
• D.J. As, E. Tschumak, H. Pöttgen, O. Kasdorf, J.W. Gerlach, H. Karl, K. Lischka:
  Carbon doping on non-polar cubic GaN by CBr₄
  Journal of Crystal Growth 311, 2039 (2009)
• D.J. As:
  Cubic group III-nitride based nano-structures - basics and applications in optoelectronics
  Microelectronics Journal 40, 204 (2009)
• E. Tschumak, M.P.F. de Godoy,  D.J. As, K. Lischka:
  Insulating substrates for cubic GaN-based HFETs
  Microelectronics Journal 40, 367 (2009)
• A. Pawlis, M. Panfilova, K. Sanaka, T.D. Ladd, D.J. As, K. Lischka, Y. Yamamoto:
  Low-threshold ZnSe microdisk laser based on Fluorine impurity bound-exciton transition
  Microelectronics Journal 40, 256 (2009)

Publications in 2008: 

• E.A. DeCuir, Jr., M.O. Manasreh, E. Tschumak, J. Schörmann, D.J. As, and K. Lischka:
  Cubic GaN/AlN multiple quantum well photodetector
  Appl. Phys. Lett. 92, 201910 (2008)
• A. Pawlis, M. Panfilova, D.J. As, K. Lischka, K. Sanaka, T.D. Ladd, and Y. Yamamoto:
  Lasing of donor-bound excitons in ZnSe microdiscs
  Phys. Rev. B 77, 153304 (2008)
• P. Schley, R. Goldhahn, C. Napierala, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke:
  Dielectric function of cubic InN from mid-infrared to the visible spetral range
  Semiconductor Science and Technol. 23, 055001 (2008)
• E.A. DeCuir, Jr., E. Fred, O. Manasreh, J. Schörmann, D.J. As, and K. Lischka:
  Near infrared intersubband absorption in cubic GaN/AlN superlattices
  MRS. Symp. Proc. Vol. 1055E, GG13.2 (2008)
• D.J. As, S. Potthast, J. Schörmann, E. Tschumak, M.F. de Godoy, K. Lischka:
  Molecular beam epitaxy of nonpolar cubic Al_xGa_1-xN/GaN epilayers
  MRS. Symp. Proc. Vol. 1040E, Q4.2 (2008)
• P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, J. Schörmann, D.J. As, K. Lischka, H. Lu, W.J. Schaff:
  Valence band density of state of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
  Phys. Rev. B 77, 115213 (2008)
• D.J. As, J. Schörmann, E. Tschumak, K. Lischka, E.A. DeCuir Jr., M.O. Manasreh:
  Growth of nonpolar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 µm applications
  phys. stat. sol. (c) 5 (6), 2092 (2008)
• P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt:
  Band gap and effective electron mass in cubic InN
  phys. stat. sol. (c) 5 (6), 2342 (2008)
• I.S. Roqan, K.P. O´Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, E. Alves, D.J. As, M. Panfilova, I.M. Watson:
  Luminescence of Eu-implanted zincblende and wurtzite GaN
  phys. stat. sol. (b) 245 (1), 170 (2008)

Publications in 2007: 

• P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Mutó, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff:
  Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
  Appl. Phys. Lett. 91, 092101(2007)
• E.A. DeCuir Jr., E. Fred, M.O. Manasreh, J. Schörmann, D.J. As, K. Lischka:
  Near-infrared Intersubband Absorption in Non-polar Cubic GaN/AlN Superlattices
  Appl. Phys. Lett. 91, 041911 (2007)
• F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck,V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka:
  Magnetic and structural properties of Gd-implanted zinc-blende GaN
  Appl. Phys. Lett. 90, 262505 (2007)
• R. Goldhahn, P. Schley, J. Schörmann, D.J. As, K. Lischka, F. Fuchs, F. Bechstedt, C. Cobet, N. Esser:
  Dielectric function and band structure of cubic InN
  Bessy - Annual Report 2006, 529 (2007)
• S.F. Li, J. Schörmann, D.J. As, K. Lischka:
  Room temperature blue and green light emissions from nonpolar cubic InGaN/GaN multi quantum wells
  Appl. Phys. Lett. 90, 071903 (2007)
• J. Schörmann, S. Potthast, D.J. As, K. Lischka:
  In-situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
  Appl. Phys. Lett. 90, 041918 (2007)
• J. Schörmann, D.J. As, K. Lischka:
  MBE Growth of cubic InN
  MRS Symp. Proc. Vol. 955E, I8.3 (2007)
• D.J. As, M. Schnietz, J. Schörmann, S. Potthast, J.W. Gerlach, J. Vogt and K. Lischka:
  MBE growth of cubic Al_xIn_1-xN and Al_xGa_yIn_1-x-yN lattice matched to GaN
  phys. stat. sol. (c) 4 (7), 2318 (2007)

Publications in 2006: 

• J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F.Li, W. Löffler, M. Hetterich, H. Kalt:
  Molecular Beam Epitaxy of phase pure cubic InN
  Appl. Phys. Lett. 89, 261903 (2006)
• J. Schörmann, S. Potthast, D.J. As, K. Lischka:
  Near UV emission from nonpolar cubic Al_xGa_1-xN/GaN Quantum Wells
  Appl. Phys. Lett. 89, 131910 (2006) 
• D.G. Pacheco-Salazar, F. Cerdeira, E.A. Meneses, J.R. Leite, S.F. Li, D.J. As and K. Lischka:
  Optical measurements on c-InGaN layers deposited on SiC substrates
  Semicond. Sci. Technol. 21, 846 (2006)
• D.J. As, S. Potthast, J. Fernandez, J. Schörmann, K. Lischka, H. Nagasawa, M. Abe:
  Ni Schottky diodes on cubic GaN
  Appl. Phys. Lett. 88, 152112 (2006)
• D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
  Mechanism of current leakage in Ni Schottky diodes on cubic GaN and Al_xGa_1-xN epilayers
  MRS Symp. Proc. Vol. 892, 283 FF 13.4.1 (2006)
• D.J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, H. Nagasawa, M. Abe:
  Molecular beam epitaxy of cubic group III-nitrides on free-standing 3C-SiC substrates
  Materials Science Forum Vols. 527-529, 1489 (2006) 
• J. Schörmann, S. Potthast, M. Schietz, S.F. Li, D.J. As, and K. Lischka:
  Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates
  phys. stat. sol. (c) 3 (6), 1604 (2006)
• S. Potthast, J. Schörmann, J. Fernandez, D.J. As, K. Lischka, H. Nagasawa, M. Abe:
  Two-dimensional electron gas in cubic Al_xGa_1-xN/GaN heterostructures
  phys. stat. sol. (c) 3 (6), 2091 (2006)
• M. Abe, H. Nagasawa, S. Potthast, D.J. As, and K. Lischka:
  Cubic GaN/AlGaN HEMTs on 3C-SiC substrates for normally-off operation
  IEICE Transactions on Electronics, E89-C (7), 1057 (2006)
• D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
  Cubic GaN/AlGaN Schottky-barrier devices an 3C-SiC substrates
  Microelectronic Engineering 83, 34 (2006)

Publications in 2005:

• R. Goldhahn, C. Buchheim, V. Lebedev, V. Cimalla, O. Ambacher, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, S. Potthast, and D.J. As:
  Dielectric function and critical points of the baund structure for hexagonal and cubic GaN and AlN
  Bessy - Annual Report 2005, p.206
• H. Przybylinska, G. Kocher, W. Jantsch, D.J. As and K. Lischka:
   Photoconductivity study of Mg and C acceptors in cubic GaN
   AIP Conf. Proc. 772, 253 (2005)
• D.G. Pacheco-Salazar, S.F. Li, F. Cerdeira, E.A. Meneses, J.R. Leite, L.M.R. Scolfaro, D.J. As and K. Lischka:
  Growth and characterization of cubic In_xGa_1-xN epilayers on two different types of substrates
  J. Crystal Growth 284 (3-4), 379 (2005)
• S.F. Li, D.J. As, K. Lischka,D.G. Pacheco-Salazar, J.R. Leite, F. Cerdeira, E.A. Meneses:
  Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells
  MRS Symp. Proc. Vol. 831, E8.15 (2005)

Publications in 2004:

• S.F. Li, J. Schörmann, A. Pawlis, D.J. As, and Klaus Lischka
  Cubic InGaN/GaN multiple quantum wells and AlGaN/GaN Bragg reflectors for green resonant cavity LED
  in IEEE Proceedings SIMC-XIII, Bejing, p.61 (2004)
• V.A. Chitta, J.A. H. Coaquira, J.R.L. Fernandez, C.A. Duarte, J.R. Leite, D. Schikora, D.J. As, K. Lischka, E.Abramof:
  Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn⁺ ions
  Appl. Phys. Lett. 85, 3777 (2004)
• A. Pawlis, D.J. As, D. Schikora, J. Schörmann, K. Lischka: (invited)
  Photonic devices based on wide gap semiconductors for room temperature polariton emission
  phys.stat.sol. (c) 1, S2, S202 (2004) 
• D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka:
  Electrical and optical properties of carbon doped cubic GaN epilayers grown under extreme Ga excess 
  MRS Symp. Proc. Vol. 798, Y8.2, p.515 (2004) 
• A. Montaigne Ramil, K. Schmidegg, A. Bonanni, H. Sitter, D. Stifter, Li Shunfeng, D.J. As, K. Lischka: 
  In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic GaN (001) 
  Thin Solid Film 455-456, 684 (2004)
• J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, J.A.N.T. Soares, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, D.G.P. Salazar, D. Schikora, K. Lischka:  
  Near band-edge optical properties of cubic GaN with and without carbon doping 
  Microelectronics Journal 35, 73 (2004)  

Publications in 2003:

• D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka: 
  Carbon doping of cubic GaN under Ga-rich growth conditions
  phys.stat.sol. (c) 0, 2537 (2003)
• J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, J.A.N.T. Soares, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, S. Potthast, D.G.P. Salazar:  
  Optical properties on the incorporation of carbon as a dopant in cubic GaN 
  Phys. Rev. B 68, 155204 (2003)
• L.K. Teles, L.G. Ferreira, J.R. Leite, L.M.R.Scolfaro, A. Kharchenko, O. Husberg, D.J. As, D. Schikora, K. Lischka:  
  Strain induced ordering in In_xGa_1-xN alloys 
  Appl. Phys. Lett. 82, 4274 (2003)
• D.J. As, S. Potthast, U. Köhler, A. Khartchenko and K. Lischka:
  Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates 
  MRS Symp. Proc. Vol. 743 L5.4 (2003) 
• O.C. Noriega, A. Tabata, J.A.N.T. Soares, S.C.P. Rodrigues, J.R. Leite, E. Ribeiro, J.R.L. Fernandez, E.A. Meneses, F. Cerdeira, D.J. As, D. Schikora, and K. Lischka: 
  Photoreflectance studies of optical transitions in cubic GaN grown on GaAs (001) substrates 
  Journal of Crystal Growth 252, 208 (2003)
• A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D.J. As, U. Köhler, A. Dadgar, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner:
  Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared spectroscopic ellipsometry 
  phys. stat. sol. (c), 0 (6),1750 (2003)
• D.J.As, D. Schikora, K. Lischka: (invited) 
  Molecular beam epitaxy of cubic III-nitrides on GaAs substrates 
  phys. stat. sol. (c), 0 (6), 1607 (2003) (invited)
• J.R.L. Fernandez, O.C. Noriega, J.A.N.T. Soares, F. Cerdeira, E.A. Meneses, J.R. Leite, D.J. As, D. Schikora, and K. Lischka:
  Near band-edge optical properties of cubic GaN 
  Solid State Communications 125, No. 3-4, 205 (2003)
• D. Schikora, D.J. As, K. Lischka: (invited)
  The molecular beam epitaxy of cubic III-nitrides 
  in  "Vacuum Science and Technology: Nitrides as seen by the Technology" edt. T. Paskova and B. Monemar, Research Signpost, Kerala, India, (ISBN: 81-7736-198-8) chapter 15, pp. 315 (2003)
• D.J.As: (invited)
  Growth and characterization of MBE-grown cubic GaN, In_xGa_1-xN and Al_yGa_1-yN 
  in “III-Nitride Semiconductor materials: Growth” eds. M.O. Manasreh and I.T. Ferguson, in series “Optoelectronic Properties of Semiconductors and Superlattices“, series editor M.O. Manasreh, (Taylor & Francis, New York), Vol. 19,  chapter 9, pp. 323-450 (2003)
• O.C. Noriega, J.R. Leite, E.A. Meneses, J.A.N.T. Soares, S.C.P. Rodrigues, L.M.R. Scolfaro,G.M. Sipahi, U. Köhler, D.J. As, S. Potthast, A. Khartchenko, and K. Lischka:
  Photoluminescence and photoreflectance characterization of cubic GaN/Al_xGa_1-xN quantum wells 
  phys. stat. sol. (c) 0, (1), 528 (2003)
• O. Husberg, A. Khartchenko, D.J. As, K. Lischka, E Silveira, O.C. Noriega, J.R.L. Fernandez, and J.R. Leite: 
  Thermal annealing of cubic InGaN/GaN double heterostructures 
  phys. stat. sol. (c) 0, (1), 293 (2003)
• D.J. As, U. Köhler, S. Potthast, A. Khartchenko, and K. Lischka, V. Potin and D. Gerthsen: 
  Cathodoluminescence, high-resolution x-ray diffraction and transmission-electron-microscopy investigations of cubic AlGaN/GaN quantum wells 
  phys. stat. sol (c) 0, (1), 253 (2003)

Publications in 2002:

• A. Pawlis, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora 
  Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure 
  Solid State Communications 123, 235-238 (2002) 
  Microelectronics Journal 34, 439 (2003)
• U. Köhler, D.J. As, S. Potthast, A. Khartchenko, K. Lischka, O.C. Noriega, D.G. Pachenco-Salazar, A. Tabata, S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Siphari, J.R. Leite 
  Optical charachterization of cubic AlGaN/GaN quantum wells
  phys. stat. sol. (a) 192 (1), 129 (2002)
• D.J. As: (invited)
  n- and p-type doping of cubic GaN 
  Defect and Diffusion Forum Vols. 206-207, 87 (2002)
• D.J. As, U. Köhler, and K. Lischka 
  Optical properties of carbon doped cubic GaN epilayers grown on GaAs (001) substrate 
  MRS Symp. Proc. Vol. 693, I 2.3 (2002) 
• A. Kasic and M. Schubert, T. Frey, U. Köhler, and D.J. As, C.M. Herzinger 
  Transverse optical phonon modes and interband transitions of cubic AlGaN films 
  Phys. Rev. B 65, 184302 (2002)
• S.C.P. Rodrigues, G.M. Sipahi, L.M.R. Scolfaro, O.C. Noriega, J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  Inter- and intraband transitions in cubic nitride quantum wells 
  phys. stat. sol. (a), vol. 190, no. 1, 121-127 (2002) 
• O. Husberg, A. Khartchenko, H. Vogelsang, D.J. As, K. Lischka, O.C. Noriega, A. Tabata, L.M.R. Scolfaro, J.R. Leite 
  Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures 
  Physica E 13, 1090-1093 (2002) 
• L.K. Teles, J. Furthmüller, L.M.R. Scolfaro, A. Tabata, J.R. Leite, F. Bechstedt, T. Frey, D.J. As, and K. Lischka 
  Phase separation and gap bowing in zinc-blende InGaN, InAIN, BGaN, and BAIN alloy layers 
  Physica E 13, 1086-1089 (2002)
• A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Khartchenko, T. Frey, D.J. As, D. Schikora, K. Lischka, J. Furthmüller, and F. Bechstedt 
  Phase separation suppression in InGaN epitaxial layers due to biaxial strain 
  Appl. Phys. Lett. 80, 769 (2002) 
• Yu.A. Pusep, M.T.O. Silva, J.R.L. Fernandez, V.A. Chitta, and J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and Al_xGa_1-xN epitaxial layers J. Appl. Phys. 91 (9), 6197 (2002)
• C. Moysés Araújo, J.R.L. Fernandez, A. Ferreira da Silva, I. Pepe, J.R. Leite, Bo E. Sernelius, A. Tabata, C. Persson, R. Ahuja, D.J. As, D. Schikora, K. Lischka 
  Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si 
  Microelectronics Journal 33, 365-369 (2002) 

Publications in 2001:

• H. Przybylinska, A. Kozanecki, V. Glukhanyak, W. Jantsch, D.J. As, K. Lischka
  Photoluminescence properties of Er doped GaN 
  Physica B 308-310, 34 (2001) 
• U. Köhler, M. Lübbers, J. Mimkes, D.J. As 
  Properties of carbon as an acceptor in cubic GaN 
  Physica B, vol. 308-310, 126 (2001)
• M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam, C.M. Herzinger 
  Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures 
  SPIE – Int.Soc.Opt.Eng. Proc. Vol. 4449, p. 58 (2001)
• M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam 
  Infrared ellipsometry - a novel tool for characterization group-III-nitride heterostructures for optoelectronic device applications 
  phys. stat. sol. (a) 288 (2), 437 (2001) 
• D.J. As, U. Köhler, M. Lübbers, J. Mimkes, and K. Lischka 
  P-type doping of cubic GaN by carbon 
  phys.stat.sol. (a) 188 (2), 699 (2001)
• O. Husberg, A. Khartchenko, D.J.As, H. Vogelsang, T. Frey, D. Schikora, and K. Lischka 
  Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures 
  Appl. Phys. Lett. 79 (9), 1243 (2001)
• D.J. As and U. Köhler 
  Carbon - an alternative acceptor for cubic GaN 
  J. Phys.: Condensed Matter 13 (40), 8923 (2001)
• J.R. Fernandez, C. Moysés Araújo, A. Ferreira da Silva, J.R. Leite, Bo E. Sernelius, A. Tabata, E. Abramof, V.A. Chitta, C. Persson, R. Ahuja, I. Pepe, D.J. As, T. Frey, D. Schikora, K. Lischka 
  Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems 
  J. Crystal Growth 231, 420 (2001)
• D.J. As, T. Frey, M. Bartels, K. Lischka, R. Goldhahn, S. Shokhovets, A. Tabata, J.R.L. Fernandez, and J.R. Leite 
  MBE growth of cubic Al_yGa_1-yN/GaN heterostructures - structural, vibrational and optical properties 
  J. Crystal Growth 230, 421 (2001)
• M.S. Liu, S. Prawer, L.A. Bursill, R. Brenn, D.J. As 
  Characterization of the surface irregularities of cubic GaN using Micro-Raman spectroscopy 
  Appl. Phys. Lett. 78 (18), 2658 (2001)
• D.J. As, T. Frey, M. Bartels, A. Khartchenko, D. Schikora, K. Lischka, R. Goldhahn, S. Shokhovets 
  Optical properties of MBE grown cubic AlGaN epilayers and AlGaN/GaN quantum well structures 
  MRS Symp. Proc. Vol. 639, G 5.9 (2001) 
  MRS Internet J. Nitrides Semicond. Res. 6S1, G 5.9 (2001)
• M.W. Bayerl, M.S. Brandt, T. Graf, O. Ambacher, J.A. Majewski, M. Stutzmann, D.J. As, K. Lischka 
  g values of effective mass donors in Al_xGa_1-xN alloys 
  Phys. Rev. B 63, 165204 (2001), 
• J.R.L. Fernandez, A. Tabata, V.A. Chitta, D.J. As, T. Frey, O.C. Noriega, M.T.O. Silva, E. Abramof, D. Schikora, K. Lischka, and J.R. Leite 
  Overdamped Electron Plasma Oscillations in Cubic Al_xGa_1-xN Layers Observed by Raman Scattering Spectroscopy 
  Institute of Pure and Applied Physics (IPAP) CS vol. 1, 664 (2001)
• T. Frey, D.J. As, M. Bartels, A. Pawlis, and K. Lischka, A. Tabata, J.R.L. Fernandez, M.T.O. Silva, and J.R. Leite, C. Haug, and R. Brenn 
  Structural and vibrational properties of MBE grown cubic (Al,Ga)N/GaN heterostructures 
  J. Appl. Phys. 89 (5), 2631 (2001)

Publications in 2000:

• M. Lisker, H. Witte, A. Krtschil, J. Christen, D.J. As, B. Schöttker, and K. Lischka 
  Enhancement of UV-sensitivity in GaN/GaAs heterostructures by Si-doping 
  Material Science Forum 338-342, 1591 (2000)
• V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  Resonant Raman scattering and the emission process in zincblende InxGa1-xN 
  Materials Science Forum 338-342, 1595 (2000) 
• D.J. As, R. Richter, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, K. Lischka 
  Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si 
  MRS Internet J N S R 5: U264-U269, Suppl. 1, 2000
• J.R.L. Fernandez, V.A. Chitta, E. Abramof et al. 
  Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature 
  MRS Internet J N S R 5: U191-U196, Suppl. 1, 2000
• D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka 
  Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates 
  phys. stat. sol. (a) 180, 369 (2000)
• J.-C. Holst, A. Hoffmann, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  The origin of optical gain in cubic In,GaN grown by molecular beam epitaxy 
  Appl. Phys. Lett. 76, 2832 (2000)
• G. Kaczmarczyk, A. Kaschner, S. Reich, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert, A. Hoffmann, and C. Thomsen 
  Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations 
  Appl. Phys. Lett. 76, 2122 (2000)
• V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, L.M.R. Scolfaro, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering 
  Phys. Rev. Lett 84, 3666 (2000)
• D.J. As, T. Frey, D. Schikora, and K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt 
  Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si (001) substrates 
  Appl. Phys. Lett. 76, 1686 (2000)
• R. Brenn, D.N. Jamieson, A. Cimmino, K.K. Lee, T. Frey, D.J. As, S. Prawer 
  Topographical structure of MBE grown cubic In_xGa_1-xN films studied with a MeV ion microprobe and by AFM 
  Nuclear Instruments and Methods in Physics B 161, 435 (2000)
• C. Wang, D.J.As, B. Buda, M. Lübbers, D. Schikora, J. Mimkes, and K. Lischka 
  Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction 
  J. Appl. Phys. 87, 3823 (2000)
• R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D.J. As, and K. Lischka 
  Refractive index and gap energy of cubic In_xGa_1-xN 
  Appl. Phys. Lett. 76, 291 (2000)
• D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka 
  Electroluminescence of a cubic GaN/GaAs (001) p-n junction 
  Appl. Phys. Lett. 76, 13 (2000)
• D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg 
  Investigations of the Stranski-Krastanov growth of CdSe quantum dots 
  Appl. Phys. Lett. 76, 418 (2000)

Publications in 1999:

• E. Silveira, A. Tabata, J.R. Leite, R. Trentin, V. Lemos, T. Frey, D.J. As, D. Schikora, K. Lischka
  Evidence of phase separation cubic In_xGa_1-xN epitaxial layers by resonant Raman scattering 
  Appl. Phys. Lett. 75, 3602 (1999)
• L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A. Tabate, J.L.P. Castineira, and D.J. As 
  Relaxation effects on the negatively charged Mg impurity in zincblende GaN 
  phys. stat. sol. (b) 216, 541 (1999)
• D.J. As and K. Lischka (invited paper) 
  Heteroepitaxy of doped and undoped cubic group III-nitrides 
  phys. stat. sol. (a) 176, 475 (1999)
• T. Frey, D.J. As, D. Schikora, K. Lischka, J. Holst, A. Hoffmann 
  Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures 
  phys. stat. sol. (b) 216, 259 (1999)
• R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. As, and K. Lischka 
  Determination of optical constants for cubic InxGa1-xN 
  phys. stat. sol. (b) 216, 265 (1999)
• J. Holst, A. Hoffmann, I. Broser, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, K. Lischka 
  The influence of structural properties on the mechanisms of optical amplification in cubic GaInN 
  phys. stat. sol. (b) 216, 471 (1999)
• A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora, and K. Lischka 
  Raman scattering study of zinc blende InxGa1-xN alloys 
  phys. stat. sol. (b) 216, 769 (1999)
• J. Portmann, C. Haug, R. Brenn, T. Frey, B. Schöttker, D.J. As 
  Ion-channeling studies of cubic GaN and In_xGa_1-xN on GaAs substrates 
  Nuclear Instruments and Methods in Physics Research B 155, 489 (1999)
• A. Tabata, J.R. Leite, A.P. Lima, E. Silveira, V. Lemos, T. Frey, D.J. As., D. Schikora, and K. Lischka 
  Raman phonon modes of zinc blende In_xGa_1-xN alloy epitaxial layers 
  Appl. Phys. Lett. 75 (8), 1095 (1999)
• R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, B. Schöttker, T. Frey , D.J. As, D. Schikora, K. Lischka 
  Time Resolved Photoluminescence of Cubic Mg Doped GaN 
  MRS Proc. Vol. 572, 225 (1999)
• A. Tabata, A.P. Lima, J.R. Leite, V. Lemos, D. Schikora, B. Schöttker, U. Köhler, D.J. As, and K. Lischka 
  Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrates 
  Semicond. Sci. Technol. 14 (1999) 318-322
• M. Lisker, A. Krtschil, H. Witte, J. Christen, D.J. As, B. Schöttker, and K. Lischka 
  Electrical and photoelectrical characterization of deep defects in cubic GaN on GaAs 
  MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998 
  MRS Internet J. Nitride Semicond. Res. 4S1, U190-U195, G2.3 (1999)
• J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D.J. As, D. Schikora, K. Lischka 
  Mechanisms of Optical Gain in Cubic GaN and InGaN 
  MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998 
  MRS Internet J. Nitride Semicond. Res. 4S1, U80-U85, G3.14 (1999)
• D.J. As, T. Simonsmeier, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, and K. Lischka 
  P- and n-type doping of MBE grown cubic GaN/GaAs epilayers 
  MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, December 1998 
  MRS Internet J. Nitride Semicond. Res. 4S1, U238-U243, G3.24 (1999)
• J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka 
  Optical gain and stimulated emission of cleaved cubic gallium nitrite 
  Appl. Phys. Lett. 74, 1966 (1999) 
• R. Pässler, E. Griebl, H. Riepl, G. Lautner, S. Bauer, H. Preis, W. Gebhardt, B. Buda, D.J. As, D. Schikora, K. Lischka, K. Papagelis, and S. Ves 
  Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films 
  J. Appl. Phys. 86, 4403 (1999)
• A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schöttker, T. Frey, D.J. As, and K. Lischka 
  Growth of cubic InN on InAs (001) by plasma assisted molecular beam epitaxy 
  J. Crystal Growth 201/202, 396 (1999) 
• Z.X. Liu, A.R. Goñi, K. Syassen, H. Siegle, C. Thomsen, B. Schöttker, D.J. As, and D. Schikora 
  Pressure and temperature effects on optical transitions in cubic GaN 
  J. Appl. Phys. 86 (2), 929 (1999)
• C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka 
  Cathodoluminescence of homogeneous cubic GaN/GaAs (001) layers 
  Semicond. Sci. Techn. 14, 161 (1999) 
• U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn 
  Optical constants of cubic GaN in the energy range of 1.5 to 3.7 eV 
  J. Appl. Phys. 85, 404 (1999)
• A.P. Lima, T. Frey, U. Köhler, C. Wang, D.J. As, K. Lischka, D. Schikora 
  Surface irregularities of MBE grown cubic GaN layers 
  J. Crystal Growth 197, 31 (1999)

Publications in 1998:

• N. Puhlmann, I. Stolpe, H.U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, and K. Lischka: 
  Megagauss cyclotron resonance in cubic GaN layers 
  Proc. 24rd Int. Conf. on Physics of Semicond., Jerusalem, August 1998 (invited paper), ed. D. Gershoni, World Scientifique, Singapore 1998
• N. Puhlmann, I. Stolpe, H.-U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, K. Lischka: 
  Magneto-optical investigations on cubic GaN in high magnetic fields 
  Physica B 256-258, 659 (1998)
• D.J. As (invited paper): 
  Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers 
  phys. stat. sol. (b) 210, 445 (1998) 
• D.J. As (invited paper): 
  Defect Related Optical and Electrical Properties of MBE Grown Cubic GaN Epilayers 
  Radiation Effects and Defects in Solids 146, 145 (1998)
• D.J. As, T. Simonsmeier, B. Schöttker, T. Frey, and D. Schikora:
  Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy 
  Appl. Phys. Lett. 73, 1835-1837 (1998)
• I. Loa, S. Gronemeyer, C. Thomsen, O. Ambacher, D. Schikora, and D.J. As: 
  Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN 
  J. Raman Spectroscopy 29, 291-295 (1998)
• B. Buda, C. Wang, W. Wrede, O. Leifeld, D.J. As, D. Schikora, and K. Lischka: 
  The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence 
  Semicond. Sci. Technol. 13, 921-926 (1998)
• J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, and K. Lischka:
  Mechanisms of optical gain in cubic gallium nitrite 
  Appl. Phys. Lett. 72, 1439 (1998) 
• D.J. As, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
  Depth resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers 
  MRS Proc. Vol. 482, 661 (1998)
• C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka:
  Cathodoluminescence of Cubic GaN Epilayers 
  Materials Science Forum Vols. 264-268 (1998) pp. 1339-1342
• B. Schöttker, J. Kühler, D.J. As, D. Schikora, and K. Lischka 
  An Accurate Method to Determine the Growth Conditions During Molecular Beam Epitaxy of Cubic GaN 
  Materials Science Forum Vols. 264-268 (1998) pp. 1173-1176
• D.J. As, C. Wang, B. Schöttker, D. Schikora, K. Lischka: 
  Depth-resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers 
  Mat. Res. Soc. Symp. Proc. Vol. 482, pp. 661-666 (1998) 

Publications in 1997:  

• H. Siegle, A.R. Goni, C. Thomsen, C. Ulrich, K. Syassen, B. Schöttker, D.J. As, D. Schikora:
  High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs 
  Mat. Res. Soc. Symp. Proc. Vol. 468, pp. 225-230 (1997)
• D.J.As, A.Greiner, M.Lübbers, J.Mimkes, M.Hankeln, K.Lischka, D.Schikora: 
  Hall-effect measurements on stoichiometrically grown cubic GaN epilayers on GaAs substrates 
  Proc. 23th Int.Conf.on the Physics of Semiconductors, Berlin, Germany 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific Publ. Singapore,1997), vol. 1, p. 509
• D.J.As, A.Rüther, M.Lübbers, J.Mimkes, K.Lischka, D.Schikora: 
  P-type conductivity with a high hole mobility in cubic GaN/GaAs epilayers 
  Mat. Res. Soc. Symp. Proc. No. 449,  pp. 615-620 (1997)
• D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka: 
  The near band edge photoluminescence of cubic GaN epilayers 
  Appl. Phys. Lett. 70, 1311-1313 (1997)
• D.Schikora, B. Schöttker, D.J. As, K.Lischka:
  Epitaxial growth and properties of cubic group III-nitride layers
  SPIE-Int. Soc. Opt. Eng. Proc. Vol. 2994, 60 (1997)

Publications in 1996:

• D.J. As, D.Schikora, A.Greiner, M.Lübbers, J.Mimkes, K.Lischka: 
  P- and n-type cubic GaN epilayers on GaAs 
  Phys. Rev. B 54, R11118 (1996)
• B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora, K. Lischka: 
  Initial roughness and relaxation behaviour of MBE grown ZnSe/GaAs 
  Acta physica polonica A 90, 997 (1996)
• D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, F. Henneberger: 
  Epitaxial growth and optical transitions of cubic GaN films 
  Phys. Rev. B 54, R8381 (1996) 

Publications in 1994:

• K. Weich, J. Hörer, E. Patzak, D.J. As, R. Eggemann, M. Möhrle: 
  Injection locked laser as wavelength converter and optical regenerator up to 10 Gbit/s
  Conf.Dig.ECOC 94, Vol.2, WeB2.2, 643 (1994)
• U. Feiste, D.J. As, A. Ehrhardt, M. Möhrle, D. Franke: 
  Investigations on the stability of an all-optically extracted clock at 18 GHz using a selfpulsating DFB-laser
  Conf.Dig.ECOC 94, Vol.1, TuP.29, 487 (1994)
• K. Weich, R. Eggemann, J. Hörer, D.J. As, M. Möhrle, E. Patzak: 
  10 Gbit/s all-optical decision with two section semiconductor lasers
  Electronics Letters 30, 784 (1994)
• K. Weich, E. Patzak, J. Hörer, D.J. As, R. Eggemann, M. Möhrle: 
  5 Gbit/s optical switching between two injection locked modes of a semiconductor laser
  Tech.Dig.CLEO 94, Vol.8, CTuT4, 170 (1994)
• K. Weich, J. Hörer, D.J. As, R. Eggemann, M. Möhrle, E. Patzak: 
  2.5 Gbit all-optical clocked decision and retiming circuit using bistable semiconductor lasers
  Tech.Dig.OFC 94, Vol.4, WB5, 79 (1994)
• U. Feiste, D.J. As, A. Ehrhardt: 
  18 GHz all-optical frequency locking and clock recovery using a selfpulsating two-section DFB-laser
  Photonics Technology Letters 6, 106 (1994)

Publications in 1993:

• A.Ehrhardt, D.J. As, U. Feiste: 
  All optical clock extraction at 18 GHz by a selfpulsating two-section DFB-laser
  Conf.Dig.ECOC 93, Vol.3, ThP12.9, 85 (1993)
• B. Sartorius, M. Möhrle, D.J. As, J. Hörer, H. Venghaus, U. Feiste: 
  High frequency locking at 18 GHz in a selfpulsating DFB laser
  Conf.Dig.ECOC 93, Vol.2, WeP8.2, 365 (1993)
• G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler, D.J.As: 
  Enhancement of the in-plane effective mass of electrons in modulation doped InGaAs quantum wells due to confinement effects
  Phys.Rev.B 48, 2328 (1993)
• D.J. As, R.Eggemann, U. Feiste, M. Möhrle, E. Patzak, K. Weich:
  Clock recovery based on a new type of selfpulstion in a 1.5 µm two-section InGaAsP-InP DFB laser
  Electronics Letters 29, 141 (1993)
• M. Maier, K. Köhler, A. Höpner, D.J. As: 
  Composition analysis of molecular beam epitaxy grown In_yGa_1-yAs/GaAs/Al_xGa_1-xAs quantum wells by deterimination of film thickness
  J. Appl. Phys. 73, 3820 (1993)
• Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
  High resolution carrier temperature and lifetime topography of semiinsulating LEC GaAs using spatially and spectrally resolved photoluminescence
  J. Appl. Phys. 73, 1430 (1993)

Publications in 1992:

• J.D. Ralston, I. Esquivias, S. Weiser, D.F.G. Gallagher, P.J. Tasker, E.C. Larkins, J. Rosenzweig, H.P. Zappe, J. Fleissner, D.J. As: 
  16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure
  SPIE Vol. 1680 High-Speed Electronics and Optoelectronics, 127 (1992)
• Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz: 
  Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
  Appl. Phys. Lett. 60, 1609 (1992)
• K. Hingerl, W. Jantsch, P. Juza, M. Lang, H. Sitter, J. Lilja, M. Pessa, D.J. As, W. Rothemund: 
  Determination of acceptor binding energies in ZnSe
  J. Crystal Growth 117, 341 (1992)
• M. Maier, D.J. As, K. Köhler, A. Höpner: 
  Composition analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
  in "Secondary Ion Mass Spectroscopy SIMS VIII", edited by A. Benninghoven, K.T.F. Jansen, J. Tümpner, H.W. Werner (J. Wiley & Sons, Chichester, 1992), p.873
• D.J.As, S. Korf, Z.M. Wang, J. Windscheif, K.H. Bachem, W. Jantz: 
  Low temperature photoluminescence topography of MOCVD grown InGaP, AlGaAs, and AlGaAs/GaAs single quantum wells
  Semiconductor Sci. Technol. 7, A27 (1992)
• Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz: 
  Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
  Appl. Phys. Lett. 60, 1609 (1992)

Publications in 1991:

• H.P. Zappe, D.J. As: 
  Carrier transport in HEMTs analyzed by high-field electroluminescence
  IEEE Electron Device Letters 12, 590 (1991)
• H.P. Zappe, D.J. As: 
  Spectrum of hot-electron luminescence from high electron mobility transistors
  Appl. Phys. Lett. 59, 2257 (1991)
• Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
  Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers
  Appl. Surf. Sci. 50, 228 (1991)
• J.D. Ralston, M. Ramsteiner, B. Dischler, M. Maier, G. Brandt, P. Koidl, D.J. As: 
  Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum well structures
  J. Appl. Phys. 70, 2195 (1991)
• K. Hingerl, W. Jantsch, P. Juza, H. Sitter, D.J. As, W. Rothemund: 
  Characterization of MBE grown ZnSe epilayers doped with Arsenic
  Crystal Properties and Preparation 32-34, 276 (1991)

Publications in 1990:

• K. Hingerl, J. Lilja, M. Toivonen, W. Jantsch, D.J. As, W. Rothemund, P. Juza, H. Sitter: 
  Electrical and optical properties of As and Li doped ZnSe films
  SPIE Proceedings Vol. 1361, 943 (1990)
• Z.M. Wang, J. Windscheif, D.J. As, W. Jantz: 
  Electron temperature and lifetime mapping of photoexcited carriers in semi-insulating LEC GaAs substrates by photoluminescence
  Inst. Phys. Conf. Ser. No. 112, 190 (1990)
• T. Schweizer, K. Köhler, P. Ganser, D.J. As, K.H. Bachem: 
  Investigation of the interface quality of GaAs/AlGaAs heterostructures
  Superlattices and Microstructures 8, 179 (1990)
• H.P. Zappe, D.J. As: 
  Mechanisms for the emission of visible light from GaAs field-effect transistors
  Appl. Phys. Lett. 57, 2919 (1990)
• K. Hingerl, H. Sitter, D.J. As, W. Rothemund: 
  Growth and Characterization of ZnSe grown on GaAs by Hot-Wall-Epitaxy
  J. Crystal Growth 101, 180 (1990)
• D.J. As, Th. Frey, W. Jantz, G. Kaufel, K. Köhler, W. Rothemund, T. Schweizer, H.P. Zappe: 
  Influences of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructrures
  J. Electr. Mat. 19, 747 (1990)

Publications in 1988:

• D.J. As, P.W. Epperlein, P.W. Mooney: 
  Deep electron traps in GaAs/n-AlGaAs single quantum wells  
  J. Appl. Phys. 64, 2408 (1988)
• D.J. As, P.W. Epperlein, P.W. Mooney: 
  DLTS measurements on MBE-grown narrow GaAs/-AlGaAs single quantum wells  
  Inst. Phys. Conf. Ser. No. 91, 561 (1988)

Publications in 1987:

• D.J. As, L. Palmetshofer: 
  Laser beam heating and high temperature luminescence of CdTe
  J. Appl. Phys. 62, 369 (1987)
• D.J. As, J.M. Langer: 
  Energy gap and the joint density of states temperature dependence in CdTe
  Acta Physica Polonica A 71, 149 (1987)
• D.J. As, L. Palmetshofer, J.M. Langer: 
  Laser annealing and photo-induced sublimation in compound semiconductors
  Acta Physica Polonica A 71, 363 (1987)

Publications in 1985:

• D.J. As, L. Palmetshofer: 
  Laser annealing of defects in CdTe epitaxial layers
  J. Crystal Growth 72, 246 (1985)
• J. Schuller, D.J. As, W. Faschinger, K. Lischka, L. Palmetshofer, H. Sitter, W. Jantsch: 
  Thermal and laser annealing of intrinsic defects in CdTe epilayers
  In Proc. 13^th Int. Conf. on Defects in Semiconductors, L.C. Kimmerling and J.M. Parsey eds., Metallurgical Soc. of AIME (1985), p. 553

Publications in 1984:

• D.J. As, L. Palmetshofer, J. Schuller, K. Lischka: 
  CW-laser annealing of CdTe epitaxial layers
  in: Laser Processing and Diagnostics, ed. D. Bäuerle, Springer Ser. Chem. Phys. 39, 64 (1984)

Nonscientific papers:

•  D.J. As: 
  International Workshop on Nitride Semiconductors (IWN-2002) in Aachen, Germany, 22-25 July 2002
  phys. stat. sol. (b) 233, 555 (2002)