recent publications
List in Research Information System (RIS)
recent publications
- E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part II: Absorption edge shift with gain and temperature effects
J. Appl. Phys. (submitted) - E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part I: Determination of the dielectric function
J. Appl. Phys. (accepted July 2023)
Publications
- E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part II: Absorption edge shift with gain and temperature effects
J. Appl. Phys. (submitted) - E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN, Part I: Determination of the dielectric function
J. Appl. Phys. (accepted July 2023)
- M. Meier, M.Littmann, J. Bürger, T. Riedl, D. Kool, J.Lindener, D. Reuter, D.J. As
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
Physica Status Solidi (b) - special issue IWN2022 -F. Meier (2023), https://doi.org/10.1002/pssb.202200508 - M. Littmann, D. Reuter, D.J. As
Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy
Physica Status Solidi (b) 260 (2023), https://doi.org/10.1002/pssb.202300034
- F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
Physica Status Solidi (b) (2022), https://doi.org/10.1063/5.0053865 - E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg
Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
arXiv:2206.02223v1 [cond-mat.mtrl-sci] 5 Jun 2022), http://arxiv.org/abs/2206.02223.
[Translate to English:]
- A. Beloufa, D. Bouguenna, N. Kermas, D.J. As
A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1-xN/AlN/GaN MOS-HEMTs
Journal of Electronic Materials. (2020) accepted - M. Deppe, T. Henksmeier, D. Reuter, D. J. As
Molecular Beam Epitaxy Growth and Characterisation of Germanium Doped Cubic AlxGa1-xN
Phys. Stat. Sol. B 257, 1900532 (2020), DOI: 10.1002/pssb.201900532 - E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
Photoluminescence line shape analysis of highly n-type doped zincblende GaN
Phys. Stat. Sol. B 257, 1900522 (2020), DOI: 10.1002/pssb.201900522
- M. Deppe, T. Henksmeier, D. Reuter, D. J. As
Molecular Beam Epitaxy Growth and Characterisation of Germanium Doped Cubic AlxGa1-xN
Phys. Stat. Sol. B 257, 1900532 (2020), DOI: 10.1002/pssb.201900532 - E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
Photoluminescence line shape analysis of highly n-type doped zincblende GaN
Phys. Stat. Sol. B 257, 1900522 (2020), DOI: 10.1002/pssb.201900522 - A. Beloufa, D. Bouguenna, N. Kermas, D.J. As
A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1-xN/AlN/GaN MOS-HEMTs
Journal of Electronic Materials.49 (3), 2008 (2020), doi.org/10.1007/s11664-019-07927-8
[Translate to English:]
List of Publications:
Journal articles
recent publications
- M. Deppe, T. Henksmeier, D. Reuter, D. J. As
- Molecular Beam Epitaxy Growth and Characterisation of Germanium Doped Cubic AlxGa1-xN
Phys. Stat. Sol. (2019) submitted - E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
Photoluminescence line shape analysis of highly n-type doped zincblende GaN
Phys. Stat. Sol. (2019) submitted - J. Rudolf,R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
Optical excitiation density dependence of spin dynamics in bulk cubic GaN
J. Appl. Phys. (2019) submitted - E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg:
Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1x1020cm-3
Phys. Rev. Mat. (2019) submitted - M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, and D.J. As
Germanium doping of cubic GaN brown by molecular beam epitaxy
J. Appl. Phys. 125, 095703 (2019); doi: 10.1063/1.5066095
[Translate to English:]
- D.J. As and K. Lischka:
Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
Molecular Beam Epitaxy (2018) online - S. Blumenthal, D. Reuter, D.J. As:
Optical properties of cubic GaN quantum dot pairs grown by molecular beam epitaxy
Phys. Stat. Sol. (b) 255 (5), 1700457 (2018) online - T. Wecker, C. Callsen, A. Hoffmann, D. Reuter, D.J. As:
Correlation of decay time and barrier thickness for asymmetric cubic GaN/Al0.64Ga0.36N double quantum wells
Phys. Stat. Sol. (b) 255 (5), 1700373 (2018) online - L.K.S. Herval, M.P.F. Godoy, T. Wecker, D.J. As:
Investigation on interface-related defects by photoluminecence of cubic (Al)GaN/AlN multi-quantum wells structures
J. Luminescence 198, 309 (2018) online - S. Blumenthal, D. Reuter, D.J. As:
Stacked self-assembled cubic GaN quantum dots grown by molecular beam epitaxy
Phys. Stat. Sol. (b) 255 (3), 1600729 (2018) online
- T. Wecker, T. Jostmeier, T. Rieger, E. Neumannn, A. Pawlis, M. Betz, D. Reuter, D.J. As:
Linear and Nonlinear Behaviour of Intersubband Transitions in IR of Cubic GaN/AlN Multi Quantum Well Structures
J. Crystal Growth 477, 149 (2017) online - M.Deppe, J. W. Gerlach, D. Reuter, D.J. As:
Incorporation of germanium for n-type doping of cubic GaN
Phys. Stat. Sol. (b) 254 (8), 1600700 (2017) online - T. Cerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov, M. Bayer:
Picosecond acoustics experiments with cubic GaN/AlGaN single quantum wells
Phys. Rev. Appl. 7, 014006 (2017) DOI: 10.1103/PhysRevApplied.7.014006 - D.J. As, M. Deppe, J.W. Gerlach and D. Reuter:
Optical Properties of Germanium Doped Cubic GaN
MRS Advances 637 (5), 283 (2017) first view DOI: 10.1557/adv.2016.6437
[Translate to English:]
- J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele and J. Rudolph:
Electron spin dynamics in bulk cubic GaN
Phys. Rev. B 94, 235202 (2016) online - V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues, E. Abramof, D. Schikora, D.J. As, K. Lischka:
Magnetic und structural properties of Fe-implated cubic GaN
J. Appl. Phys. 120 (10), 103901 (2016) online - D. Bouguenma, T. Wecker, D.J. As, N. Kermas, A. Beloufa:
Numerical analysis of transmission coefficient, LDOS and DOS in superlattice nanostructures of cubic AlxGa1-xN/GaN resonant tunneling MODFETs
J. of Computational Electronics, 15 1 (2016) online - C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H-W. Becker, D.J. As, H.C. Hofsäss, A.D. Wieck, A. Ludwig:
Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots
Nucl. Instr. Meth. B 383, 1 (2016) online - S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter and D.J. As:
Fabrication and Characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots
phys. stat. sol. (c) 13, No. 5–6, 292–296 (2016) online - T. Wecker, G. Callsen, A. Hoffmann, D. Reuter and D.J. As:
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy
Jap. J. Appl. Phys. 55, 05FG01 (2016) online - M. Rüsing, T. Wecker, G. Berth, D.J. As, and A. Zrenner:
Joint Raman spectrosopy and HRXRD investigation of cubic Gallium nitride layers grown on 3C-SiC
phys. stat. sol. (b) 253, 778 (2016) online - S. Sergent, S. Kako, M. Bürger, S. Blumenthal, S. Iwamoto, D.J. As and Y. Arakawa:
Active Zinc-Blende III-Nitride Photonic Structures on Silicon
Appl. Phys. Express 9, 012002 (2016) online
[Translate to English:]
- J.H. Buß, T. Schupp, D.J. As, D.J. Hägele and J. Rudolph:
Temperature dependence of the electron Landé g-factor in cubic GaN
J. Appl. Phys. 118, 225701 (2015) - T. Jostmeier, T. Wecker, D. Reuter, D.J. As, and M. Betz:
Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice
Appl. Phys. Lett. 107, 211101 (2015) - T. Wecker, H. Hörich, M. Feneberg, R. Goldhahn, D. Reuter and D.J. As:
Structural and optical properties of MBE grown asymmetric cubic GaN/AlxGa1-xN double quantum wells
phys. stat. sol. (b) 252 (5), 873 (2015) - R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, J.K.N. Lindner and D.J. As:
STEM-CL investigations on the influence of stacking faults on the optical properties of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
phys. stat. sol. (c) 12 (4-5), 469 (2015) - M. Bürger, J.K.N. Lindner, D. Reuter and D.J. As:
Investigation of cubic GaN quantum dots grown by the Stranski-Krastanaov process
phys. stat. sol. (c) 12 (4-5), 452 (2015) - A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D.J. Hägele, and J. Rudolf:
Strain dependent electron spin dynamics in bulk cubic GaN
J. Appl. Phys. 117, 093906 (2015)
- D.J. As, R.M. Kemper, C. Mietze, T. Wecker, J.K.N. Lindner, P. Veit, A. Dempewolf, T. Wecker, and J. Christen:
Spacially Resolved Optical Emission of Cubic GaN/AlN Multi-Quantum Well Structures
MRS Symp. Proc. Vol. 1736 E, T3.03 (2014) - S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots
Phys. Rev. B 90, 235312 (2014) - J.H. Buß. A. Schaefer, T. Schupp, D.J. As, D.J. Hägele, and J. Rudolf:
High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature
Appl. Phys. Lett. 105, 182404 (2014) - S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, and Y. Arakawa:
Excitonic complexes in single Zinc-Blende GaN/AlN Quantum Dots Grown by Droplet Epitaxy
Appl. Phys. Lett. 105, 141112 (2014) - M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, and D.J. As:
Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks
phys. stat. sol. (c) 11 (3-4), 790 (2014) - A.D. Rodrigues, M.P.F. de Godoy, C. Mietze, and D.J. As:
Phonon localization in cubic GaN/AlN superlattices
Solid State Comunications 186, 18 (2014) - L. Hiller, T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As and J. Pezoldt:
Hydrogen Effects in ECR-etching of 3C-SiC(100) Mesa structures
Materials Science Forum Vols. 778-780, 730 (2014) - R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As and J.K.N. Lindner:
Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)
phys. stat. sol. (c) 11 (2), 265 (2014) - S. Kako, M. Holmes, S. Sergent, M. Bürger, D.J. As, and Y. Arakawa:
Single-Photon Emission from Cubic GaN Quantum Dots
Appl. Phys. Lett. 104, 011101 (2014)
- S. Sergent, S. Kako, M. Bürger, D.J. As, and Y. Arakawa:
Narrow Spectral Linewidth of Single Zinc-Blende GaN/AlN Self-Assembled Quantum Dots
Appl. Phys. Lett. 103, 151109 (2013) - D. Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As:
Comparative study on performance of cubic AlxGa1-xN/GaN nanostructures MODFETs and MOS-MODFETs
Superlattices and Microstructures 62, 260 (2013) - M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter and D.J. As:
Lasing properties of non-polar GaN quantum dots in cubic AlN microdisk cavities
Appl. Phys. Lett 103, 021107 (2013) - M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, R. Goldhahn:
Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1-xN
Phys. Rev. B 87, 195210 (2013) - M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier and D.J. As:
Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
Appl. Phys. Lett. 102, 081105 (2013) - R.M. Kemper, D.J. As and J.K.N. Lindner:
Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
in "Silicon-based Nanomaterials" edt.H. Li, J. Wu, Z.M. Wang, Springer Series in Materials Sciences 187, chapter 15, 381-405 (2013), ISBN 978-1-4614-8168-3, DOI: 10.1007/978-1-4614-8169-0 - D.J. As, A. Zado, Q.Y. Wei, T. Li, J.Y. Huang, F.A. Ponce:
Capacity Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions
Jap. J. Appl. Phys. 52 (8), 08JN04 (2013) - R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As and J.K.N. Lindner:
Growth of cubic GaN on 3C-SiC/Si (001) nanostructures
Journal of Crystal Growth 378, 291 (2013) - M. Bürger, R.M. Kemper, C. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner and D.J. As:
Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
Journal of Crystal Growth 378, 287 (2013) - D.J. As and C. Mietze: (invited paper)
MBE growth and applications of cubic AlN/GaN quantum wells
phys. stat. sol. (a) 210, 474 (2013) - A. Zado and D.J. As:
Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C-SiC substrates
phys. stat. sol. (c) 10 (3), 486 (2013) - C. Mietze, M. Bürger, S. Sakr, M. Thernycheva, F.H. Julien, and D.J. As:
Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers
phys. stat. sol. (a) 210 (3), 455 (2013) - D.J. As, K. Lischka: (invited)
Nonpolar cubic III-nitrides: from the basics of growth to device applications
in "Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots; From Research to Mass Production" edt. M. Henini, Elsevier (2013), chapter 11, p 203 (ISBN 9780123878397, http://dx.doi.org/10.1016/B978-0-12-387839-7.00011-7)
- D. Bouguenna, A. Boudghene Stambouli, A. Zado, D.J. As, N. Mekkakia Maaza:
2D Simulations of current-voltage characteristics of cubic AlxGa1-xN/GaN modulation doped hetero-junction field effect transistor structures
Electrical and Electronic Engineering 2 (5), 309 (2012) - M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn:
Optical properties of cubic GaN from 1 to 20 eV
Phys. Rev. B 85, 155207 (2012) - M. Bürger, T. Schupp, K. Lischka and D.J. As:
Cathodoluminescence spectroscopy of zinc-blende GaN quantum dots
phys. stat. sol. (c) 9 (5), 1273 (2012) - Q.Y. Wei, T. Li, J.Y. Huang, F.A. Ponce, E. Tschumak, A. Zado, D.J. As:
Free carrier accumulation at cubic AlGaN/GaN heterojunction
Appl. Phys. Lett 100, 142108 (2012) - A. Zado, K. Lischka and D.J. As:
Electrical properties of MBE grown Si3N4 - cubic GaN MIS structures
phys. stat. sol. (c) 9 (3-4), 1088 (2012) - R. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As and J.K.N. Lindner:
Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
phys. stat. sol. (c) 9 (3-4), 1028 (2012) - C. Mietze, K. Lischka and D.J. As:
Current-voltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3C-SiC
phys. stat. sol. (a) 209 (3), 439 (2012). - A. Zado, J. Gerlach and D.J. As:
Low interface trapped charge density in MBE in situ grown Si3N4 cubic GaN MIS structures
Semicond. Sci. Technol. 27, 035020 (2012) - J. Pezoldt, R. Grieseler, T. Schupp, D.J. As, P. Schaaf:
Mechanical Properties of cubic SiC, GaN and AlN thin Films
Materials Science Forum Vols. 717-720, 513 (2012) - L. Hiller. T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt:
ECR-Etching of Submicron and Nanometer sized 3C-SiC (100) Mesa Structures
Materials Science Forum Vols. 717-720, 901 (2012)
- R.M. Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, and D.J. As:
Anti-phase domains in cubic GaN
J. Appl. Phys. 110, 123512 (2011) - R. Granzner, E. Tschumak, M. Kittler, K. Tonisch, W. Jatal, J. Pezoldt, D.J. As and F. Schwierz:
Vertical design of cubic GaN-based high electron mobility transistors
J. Appl. Phys. 110, 114501 (2011) - C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka and D.J. As:
Band offsets in cubic GaN/AlN superlattices
Phys. Rev. B 83, 195301 (2011) - J.H. Buß, J. Rudolf, T. Schupp, D.J. As, K. Lischka, and D. Hägele:
Long room-temperature electron spin lifetimes in bulk cubic GaN
Proc. of SPIE Vol. 7937, 793711 (2011) (invited paper) - H. Machhadani, M. Tchernycheva, L. Rigutti, S. Saki, R. Colombelli, C. Mietze, D.J. As and F.H. Julien:
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to THz spectral range
Phys. Rev. B 83, 075313 (2011) - T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
Molcular beam epitaxy based growth of cubic GaN quantum dots
phys. stat. sol. (c) 8 (5), 1495 (2011) - R.M. Kemper, M. Weinl. C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.K.N. Lindner, K. Lischka, D.J. As:
Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates
Journal of Crystal Growth 323, 84 (2011) - T. Schupp, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation
Journal of Crystal Growth 323, 286 (2011) - A. Zado, E. Tschumak, J. Gerlach, K. Lischka, and D.J. As:
Carbon as an acceptor in cubic GaN/3C-SiC
Journal of Crystal Growth 323, 88 (2011)
- T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
Growth of cubic GaN quantum dots
AIP Conf. Proc. 1292, 165 (2010) - C. Mietze, E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As:
Band offset between cubic GaN and AlN from intra- and interband spectroscopy of superlattices
AIP Conf. Proc. 1292, 169 (2010) - A. Zado, E. Tschumak, J. Gerlach, K. Lischka, and D.J. As:
Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4
AIP Conf. Proc. 1292, 181 (2010) - E. Tschumak: (invited paper)
Cubic AlGaN/GaN hetero-Junction Field-Effect Transitors with Normally-on and Normally-off Chracteristics
AIP Conf. Proc. 1292, 159 (2010) - J.H. Buß, J. Rudolf, T. Schupp, D.J. As, K. Lischka, and D. Hägele:
Long room-temperature electron spin lifetimes in highly doped cubic GaN
Appl. Phys. Lett. 97, 062101 (2010) - T. Schupp, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As:
Droplet epitaxy of zinc-blende GaN quantum dots
Journal of Crystal Growth 312, 3235 (2010) - E. Tschumak, R. Granzer, J.K.N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and D.J. As:
Nonpolar cubic AlGaN/GaN HFETs on Ar+ implanted 3C-SiC (001)
Appl. Phys. Lett. 96, 253501 (2010) - R. Kudrawiec, E. Tschumak, J. Misiewicz, and D.J. As:
Contactless electro-reflectance study of Fermi-level pinning at the surface of cubic GaN
Appl. Phys. Lett. 96, 241904 (2010) - D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, K. Lischka:
Cubic AlGaN/GaN Hetero-field effect tranistors with normally on and normally off operation
MRS Symp. Proc. Vol. 1202, I04-08 (2010) - D.J. As:
Recent developments on non-polar cubic group III-nitrides for optoelectronic applications
Proc. of SPIE Vol. 7608, 76080G (2010) (invited paper) - T. Schupp, K. Lischka and D.J. As:
MBE growth of atomically smooth cubic AlN
J. Crystal Growth 312, 1500 (2010) - D.J. As, H. Pöttgen, E. Tschumak, and K. Lischka:
Electronic properties of nonpolar cubic GaN MOS structures
phys. stat. sol. (c) 7 (7-8), 1988 (2010) - T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, N. Esser, C. Cobet, K. Lischka, and D.J. As:
MBE growth of cubic AlN on 3C-SiC substrate
phys. stat. sol. (a), 207 (6), 1365 (2010) - A. Scholle, S. Greulich-Weber, D.J. As, C. Mietze, N.T. Son, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt:
Magnetic characterization of conductance electrons in GaN
phys. stat. sol. (b) 247 (7), 1728 (2010) - T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, K. Lischka, and D.J. As:
Growth of atomically smooth cubic AlN by molecular beam epitaxy
phys. stat. sol. (c) 7 (1), 17 (2010) - E. Tschumak, J.K.N. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and D.J. As:
Nonpolar cubic AlGaN/GaN HFETs grown by MBE on Ar+ implanted 3C-SiC (001)
phys. stat. sol. (c) 7 (1), 104 (2010) - A. Zado, E. Tschumak, K. Lischka, and D.J. As:
Electrical characterization of an interface n-type conduction channel in cubic AlGaN/GaN heterostructures
phys. stat. sol. (c) 7 (1), 52 (2010) - C. Mietze, E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As:
Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC
phys. stat. sol. (c) 7 (1), 64 (2010) - F. Niebelschütz, K. Bruecker, W. Jatal, E. Tschumak, D.J. As, A. Hein, and J. Pezoldt, :
Resonant MEMS based on cubic GaN layers
phys. stat. sol. (c) 7 (1), 116 (2010)
Publications in 2009:
- M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, and D.J. As:
Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
J. Appl. Phys. 106, 076104 (2009) - K. Lorenz, I.S. Roqan, N. Franco, K.P. O´Donnell, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova:
Europium doping of cubic (zincblende) GaN by ion implantation
J. Appl. Phys. 105, 113507 (2009) - D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka:
Schottky and ohmic contacts on non-polar cubic GaN epilayers
MRS. Symp. Proc. Vol. 1108, A01-02 (2009) - E. Tschumak, K. Tonisch, J. Pezoldt, D.J. As:
Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates
Proc. ECSCRM-2008 in Materials Science Forum Vols. 615-617 (2009) 943 - D.J. As, E. Tschumak, H. Pöttgen, O. Kasdorf, J.W. Gerlach, H. Karl, K. Lischka:
Carbon doping on non-polar cubic GaN by CBr4
Journal of Crystal Growth 311, 2039 (2009) - D.J. As:
Cubic group III-nitride based nano-structures - basics and applications in optoelectronics
Microelectronics Journal 40, 204 (2009) - E. Tschumak, M.P.F. de Godoy, D.J. As, K. Lischka:
Insulating substrates for cubic GaN-based HFETs
Microelectronics Journal 40, 367 (2009) - A. Pawlis, M. Panfilova, K. Sanaka, T.D. Ladd, D.J. As, K. Lischka, Y. Yamamoto:
Low-threshold ZnSe microdisk laser based on Fluorine impurity bound-exciton transition
Microelectronics Journal 40, 256 (2009)
Publications in 2008:
- E.A. DeCuir, Jr., M.O. Manasreh, E. Tschumak, J. Schörmann, D.J. As, and K. Lischka:
Cubic GaN/AlN multiple quantum well photodetector
Appl. Phys. Lett. 92, 201910 (2008) - A. Pawlis, M. Panfilova, D.J. As, K. Lischka, K. Sanaka, T.D. Ladd, and Y. Yamamoto:
Lasing of donor-bound excitons in ZnSe microdiscs
Phys. Rev. B 77, 153304 (2008) - P. Schley, R. Goldhahn, C. Napierala, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke:
Dielectric function of cubic InN from mid-infrared to the visible spetral range
Semiconductor Science and Technol. 23, 055001 (2008) - E.A. DeCuir, Jr., E. Fred, O. Manasreh, J. Schörmann, D.J. As, and K. Lischka:
Near infrared intersubband absorption in cubic GaN/AlN superlattices
MRS. Symp. Proc. Vol. 1055E, GG13.2 (2008) - D.J. As, S. Potthast, J. Schörmann, E. Tschumak, M.F. de Godoy, K. Lischka:
Molecular beam epitaxy of nonpolar cubic AlxGa1-xN/GaN epilayers
MRS. Symp. Proc. Vol. 1040E, Q4.2 (2008) - P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, J. Schörmann, D.J. As, K. Lischka, H. Lu, W.J. Schaff:
Valence band density of state of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
Phys. Rev. B 77, 115213 (2008) - D.J. As, J. Schörmann, E. Tschumak, K. Lischka, E.A. DeCuir Jr., M.O. Manasreh:
Growth of nonpolar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 µm applications
phys. stat. sol. (c) 5 (6), 2092 (2008) - P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt:
Band gap and effective electron mass in cubic InN
phys. stat. sol. (c) 5 (6), 2342 (2008) - I.S. Roqan, K.P. O´Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, E. Alves, D.J. As, M. Panfilova, I.M. Watson:
Luminescence of Eu-implanted zincblende and wurtzite GaN
phys. stat. sol. (b) 245 (1), 170 (2008)
Publications in 2007:
- P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Mutó, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff:
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
Appl. Phys. Lett. 91, 092101(2007) - E.A. DeCuir Jr., E. Fred, M.O. Manasreh, J. Schörmann, D.J. As, K. Lischka:
Near-infrared Intersubband Absorption in Non-polar Cubic GaN/AlN Superlattices
Appl. Phys. Lett. 91, 041911 (2007) - F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck,V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka:
Magnetic and structural properties of Gd-implanted zinc-blende GaN
Appl. Phys. Lett. 90, 262505 (2007) - R. Goldhahn, P. Schley, J. Schörmann, D.J. As, K. Lischka, F. Fuchs, F. Bechstedt, C. Cobet, N. Esser:
Dielectric function and band structure of cubic InN
Bessy - Annual Report 2006, 529 (2007) - S.F. Li, J. Schörmann, D.J. As, K. Lischka:
Room temperature blue and green light emissions from nonpolar cubic InGaN/GaN multi quantum wells
Appl. Phys. Lett. 90, 071903 (2007) - J. Schörmann, S. Potthast, D.J. As, K. Lischka:
In-situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
Appl. Phys. Lett. 90, 041918 (2007) - J. Schörmann, D.J. As, K. Lischka:
MBE Growth of cubic InN
MRS Symp. Proc. Vol. 955E, I8.3 (2007) - D.J. As, M. Schnietz, J. Schörmann, S. Potthast, J.W. Gerlach, J. Vogt and K. Lischka:
MBE growth of cubic AlxIn1-xN and AlxGayIn1-x-yN lattice matched to GaN
phys. stat. sol. (c) 4 (7), 2318 (2007)
Publications in 2006:
- J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F.Li, W. Löffler, M. Hetterich, H. Kalt:
Molecular Beam Epitaxy of phase pure cubic InN
Appl. Phys. Lett. 89, 261903 (2006) - J. Schörmann, S. Potthast, D.J. As, K. Lischka:
Near UV emission from nonpolar cubic AlxGa1-xN/GaN Quantum Wells
Appl. Phys. Lett. 89, 131910 (2006) - D.G. Pacheco-Salazar, F. Cerdeira, E.A. Meneses, J.R. Leite, S.F. Li, D.J. As and K. Lischka:
Optical measurements on c-InGaN layers deposited on SiC substrates
Semicond. Sci. Technol. 21, 846 (2006) - D.J. As, S. Potthast, J. Fernandez, J. Schörmann, K. Lischka, H. Nagasawa, M. Abe:
Ni Schottky diodes on cubic GaN
Appl. Phys. Lett. 88, 152112 (2006) - D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
Mechanism of current leakage in Ni Schottky diodes on cubic GaN and AlxGa1-xN epilayers
MRS Symp. Proc. Vol. 892, 283 FF 13.4.1 (2006) - D.J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, H. Nagasawa, M. Abe:
Molecular beam epitaxy of cubic group III-nitrides on free-standing 3C-SiC substrates
Materials Science Forum Vols. 527-529, 1489 (2006) - J. Schörmann, S. Potthast, M. Schietz, S.F. Li, D.J. As, and K. Lischka:
Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates
phys. stat. sol. (c) 3 (6), 1604 (2006) - S. Potthast, J. Schörmann, J. Fernandez, D.J. As, K. Lischka, H. Nagasawa, M. Abe:
Two-dimensional electron gas in cubic AlxGa1-xN/GaN heterostructures
phys. stat. sol. (c) 3 (6), 2091 (2006) - M. Abe, H. Nagasawa, S. Potthast, D.J. As, and K. Lischka:
Cubic GaN/AlGaN HEMTs on 3C-SiC substrates for normally-off operation
IEICE Transactions on Electronics, E89-C (7), 1057 (2006) - D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
Cubic GaN/AlGaN Schottky-barrier devices an 3C-SiC substrates
Microelectronic Engineering 83, 34 (2006)
Publications in 2005:
- R. Goldhahn, C. Buchheim, V. Lebedev, V. Cimalla, O. Ambacher, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, S. Potthast, and D.J. As:
Dielectric function and critical points of the baund structure for hexagonal and cubic GaN and AlN
Bessy - Annual Report 2005, p.206 - H. Przybylinska, G. Kocher, W. Jantsch, D.J. As and K. Lischka:
Photoconductivity study of Mg and C acceptors in cubic GaN
AIP Conf. Proc. 772, 253 (2005) - D.G. Pacheco-Salazar, S.F. Li, F. Cerdeira, E.A. Meneses, J.R. Leite, L.M.R. Scolfaro, D.J. As and K. Lischka:
Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrates
J. Crystal Growth 284 (3-4), 379 (2005) - S.F. Li, D.J. As, K. Lischka,D.G. Pacheco-Salazar, J.R. Leite, F. Cerdeira, E.A. Meneses:
Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells
MRS Symp. Proc. Vol. 831, E8.15 (2005)
Publications in 2004:
- S.F. Li, J. Schörmann, A. Pawlis, D.J. As, and Klaus Lischka
Cubic InGaN/GaN multiple quantum wells and AlGaN/GaN Bragg reflectors for green resonant cavity LED
in IEEE Proceedings SIMC-XIII, Bejing, p.61 (2004) - V.A. Chitta, J.A. H. Coaquira, J.R.L. Fernandez, C.A. Duarte, J.R. Leite, D. Schikora, D.J. As, K. Lischka, E.Abramof:
Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions
Appl. Phys. Lett. 85, 3777 (2004) - A. Pawlis, D.J. As, D. Schikora, J. Schörmann, K. Lischka: (invited)
Photonic devices based on wide gap semiconductors for room temperature polariton emission
phys.stat.sol. (c) 1, S2, S202 (2004) - D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka:
Electrical and optical properties of carbon doped cubic GaN epilayers grown under extreme Ga excess
MRS Symp. Proc. Vol. 798, Y8.2, p.515 (2004) - A. Montaigne Ramil, K. Schmidegg, A. Bonanni, H. Sitter, D. Stifter, Li Shunfeng, D.J. As, K. Lischka:
In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic GaN (001)
Thin Solid Film 455-456, 684 (2004) - J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, J.A.N.T. Soares, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, D.G.P. Salazar, D. Schikora, K. Lischka:
Near band-edge optical properties of cubic GaN with and without carbon doping
Microelectronics Journal 35, 73 (2004)
Publications in 2003:
- D.J. As, D.G. Pachenco-Salazar, S. Potthast, K. Lischka:
<link fileadmin physik arbeitsgruppen ag_as papers>Carbon doping of cubic GaN under Ga-rich growth conditions
phys.stat.sol. (c) 0, 2537 (2003) - J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, J.A.N.T. Soares, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, S. Potthast, D.G.P. Salazar:
<link fileadmin physik arbeitsgruppen ag_as papers>Optical properties on the incorporation of carbon as a dopant in cubic GaN
Phys. Rev. B 68, 155204 (2003) - L.K. Teles, L.G. Ferreira, J.R. Leite, L.M.R.Scolfaro, A. Kharchenko, O. Husberg, D.J. As, D. Schikora, K. Lischka:
Strain induced ordering in InxGa1-xN alloys
Appl. Phys. Lett. 82, 4274 (2003) - D.J. As, S. Potthast, U. Köhler, A. Khartchenko and K. Lischka:
Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates
MRS Symp. Proc. Vol. 743 L5.4 (2003) - O.C. Noriega, A. Tabata, J.A.N.T. Soares, S.C.P. Rodrigues, J.R. Leite, E. Ribeiro, J.R.L. Fernandez, E.A. Meneses, F. Cerdeira, D.J. As, D. Schikora, and K. Lischka:
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs (001) substrates
Journal of Crystal Growth 252, 208 (2003) - A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D.J. As, U. Köhler, A. Dadgar, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner:
Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared spectroscopic ellipsometry
phys. stat. sol. (c), 0 (6),1750 (2003) - D.J.As, D. Schikora, K. Lischka: (invited)
Molecular beam epitaxy of cubic III-nitrides on GaAs substrates
phys. stat. sol. (c), 0 (6), 1607 (2003) (invited) - J.R.L. Fernandez, O.C. Noriega, J.A.N.T. Soares, F. Cerdeira, E.A. Meneses, J.R. Leite, D.J. As, D. Schikora, and K. Lischka:
Near band-edge optical properties of cubic GaN
Solid State Communications 125, No. 3-4, 205 (2003) - D. Schikora, D.J. As, K. Lischka: (invited)
The molecular beam epitaxy of cubic III-nitrides
in "Vacuum Science and Technology: Nitrides as seen by the Technology" edt. T. Paskova and B. Monemar, Research Signpost, Kerala, India, (ISBN: 81-7736-198-8) chapter 15, pp. 315 (2003) - D.J.As: (invited)
<link fileadmin physik arbeitsgruppen ag_as papers>Growth and characterization of MBE-grown cubic GaN, InxGa1-xN and AlyGa1-yN
in “III-Nitride Semiconductor materials: Growth” eds. M.O. Manasreh and I.T. Ferguson, in series “Optoelectronic Properties of Semiconductors and Superlattices“, series editor M.O. Manasreh, (Taylor & Francis, New York), Vol. 19, chapter 9, pp. 323-450 (2003) - O.C. Noriega, J.R. Leite, E.A. Meneses, J.A.N.T. Soares, S.C.P. Rodrigues, L.M.R. Scolfaro,G.M. Sipahi, U. Köhler, D.J. As, S. Potthast, A. Khartchenko, and K. Lischka:
Photoluminescence and photoreflectance characterization of cubic GaN/AlxGa1-xN quantum wells
phys. stat. sol. (c) 0, (1), 528 (2003) - O. Husberg, A. Khartchenko, D.J. As, K. Lischka, E Silveira, O.C. Noriega, J.R.L. Fernandez, and J.R. Leite:
Thermal annealing of cubic InGaN/GaN double heterostructures
phys. stat. sol. (c) 0, (1), 293 (2003) - D.J. As, U. Köhler, S. Potthast, A. Khartchenko, and K. Lischka, V. Potin and D. Gerthsen:
Cathodoluminescence, high-resolution x-ray diffraction and transmission-electron-microscopy investigations of cubic AlGaN/GaN quantum wells
phys. stat. sol (c) 0, (1), 253 (2003)
Publications in 2002:
- A. Pawlis, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora
Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure
<link fileadmin physik arbeitsgruppen ag_as papers>Solid State Communications 123, 235-238 (2002)
<link fileadmin physik arbeitsgruppen ag_as papers>Microelectronics Journal 34, 439 (2003) - U. Köhler, D.J. As, S. Potthast, A. Khartchenko, K. Lischka, O.C. Noriega, D.G. Pachenco-Salazar, A. Tabata, S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Siphari, J.R. Leite
Optical charachterization of cubic AlGaN/GaN quantum wells
phys. stat. sol. (a) 192 (1), 129 (2002) - D.J. As: (invited)
<link fileadmin physik arbeitsgruppen ag_as papers>n- and p-type doping of cubic GaN
Defect and Diffusion Forum Vols. 206-207, 87 (2002) - D.J. As, U. Köhler, and K. Lischka
<link fileadmin physik arbeitsgruppen ag_as papers>Optical properties of carbon doped cubic GaN epilayers grown on GaAs (001) substrate
MRS Symp. Proc. Vol. 693, I 2.3 (2002) - A. Kasic and M. Schubert, T. Frey, U. Köhler, and D.J. As, C.M. Herzinger
Transverse optical phonon modes and interband transitions of cubic AlGaN films
Phys. Rev. B 65, 184302 (2002) - S.C.P. Rodrigues, G.M. Sipahi, L.M.R. Scolfaro, O.C. Noriega, J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka
Inter- and intraband transitions in cubic nitride quantum wells
phys. stat. sol. (a), vol. 190, no. 1, 121-127 (2002) - O. Husberg, A. Khartchenko, H. Vogelsang, D.J. As, K. Lischka, O.C. Noriega, A. Tabata, L.M.R. Scolfaro, J.R. Leite
Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures
Physica E 13, 1090-1093 (2002) - L.K. Teles, J. Furthmüller, L.M.R. Scolfaro, A. Tabata, J.R. Leite, F. Bechstedt, T. Frey, D.J. As, and K. Lischka
Phase separation and gap bowing in zinc-blende InGaN, InAIN, BGaN, and BAIN alloy layers
Physica E 13, 1086-1089 (2002) - A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Khartchenko, T. Frey, D.J. As, D. Schikora, K. Lischka, J. Furthmüller, and F. Bechstedt
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
Appl. Phys. Lett. 80, 769 (2002) - Yu.A. Pusep, M.T.O. Silva, J.R.L. Fernandez, V.A. Chitta, and J.R. Leite, T. Frey, D.J. As, D. Schikora, and K. Lischka
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and AlxGa1-xN epitaxial layers J. Appl. Phys. 91 (9), 6197 (2002) - C. Moysés Araújo, J.R.L. Fernandez, A. Ferreira da Silva, I. Pepe, J.R. Leite, Bo E. Sernelius, A. Tabata, C. Persson, R. Ahuja, D.J. As, D. Schikora, K. Lischka
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si
Microelectronics Journal 33, 365-369 (2002)
Publications in 2001:
- H. Przybylinska, A. Kozanecki, V. Glukhanyak, W. Jantsch, D.J. As, K. Lischka
Photoluminescence properties of Er doped GaN
Physica B 308-310, 34 (2001) - U. Köhler, M. Lübbers, J. Mimkes, D.J. As
<link fileadmin physik arbeitsgruppen ag_as papers>Properties of carbon as an acceptor in cubic GaN
Physica B, vol. 308-310, 126 (2001) - M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam, C.M. Herzinger
Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures
SPIE – Int.Soc.Opt.Eng. Proc. Vol. 4449, p. 58 (2001) - M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz, J.A. Woollam
Infrared ellipsometry - a novel tool for characterization group-III-nitride heterostructures for optoelectronic device applications
phys. stat. sol. (a) 288 (2), 437 (2001) - D.J. As, U. Köhler, M. Lübbers, J. Mimkes, and K. Lischka
<link fileadmin physik arbeitsgruppen ag_as papers>P-type doping of cubic GaN by carbon
phys.stat.sol. (a) 188 (2), 699 (2001) - O. Husberg, A. Khartchenko, D.J.As, H. Vogelsang, T. Frey, D. Schikora, and K. Lischka
Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures
Appl. Phys. Lett. 79 (9), 1243 (2001) - D.J. As and U. Köhler
<link fileadmin physik arbeitsgruppen ag_as papers>Carbon - an alternative acceptor for cubic GaN
J. Phys.: Condensed Matter 13 (40), 8923 (2001) - J.R. Fernandez, C. Moysés Araújo, A. Ferreira da Silva, J.R. Leite, Bo E. Sernelius, A. Tabata, E. Abramof, V.A. Chitta, C. Persson, R. Ahuja, I. Pepe, D.J. As, T. Frey, D. Schikora, K. Lischka
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems
J. Crystal Growth 231, 420 (2001) - D.J. As, T. Frey, M. Bartels, K. Lischka, R. Goldhahn, S. Shokhovets, A. Tabata, J.R.L. Fernandez, and J.R. Leite
MBE growth of cubic AlyGa1-yN/GaN heterostructures - structural, vibrational and optical properties
J. Crystal Growth 230, 421 (2001) - M.S. Liu, S. Prawer, L.A. Bursill, R. Brenn, D.J. As
Characterization of the surface irregularities of cubic GaN using Micro-Raman spectroscopy
Appl. Phys. Lett. 78 (18), 2658 (2001) - D.J. As, T. Frey, M. Bartels, A. Khartchenko, D. Schikora, K. Lischka, R. Goldhahn, S. Shokhovets
<link fileadmin physik arbeitsgruppen ag_as papers>Optical properties of MBE grown cubic AlGaN epilayers and AlGaN/GaN quantum well structures
MRS Symp. Proc. Vol. 639, G 5.9 (2001)
MRS Internet J. Nitrides Semicond. Res. 6S1, G 5.9 (2001) - M.W. Bayerl, M.S. Brandt, T. Graf, O. Ambacher, J.A. Majewski, M. Stutzmann, D.J. As, K. Lischka
g values of effective mass donors in AlxGa1-xN alloys
Phys. Rev. B 63, 165204 (2001), - J.R.L. Fernandez, A. Tabata, V.A. Chitta, D.J. As, T. Frey, O.C. Noriega, M.T.O. Silva, E. Abramof, D. Schikora, K. Lischka, and J.R. Leite
Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy
Institute of Pure and Applied Physics (IPAP) CS vol. 1, 664 (2001) - T. Frey, D.J. As, M. Bartels, A. Pawlis, and K. Lischka, A. Tabata, J.R.L. Fernandez, M.T.O. Silva, and J.R. Leite, C. Haug, and R. Brenn
Structural and vibrational properties of MBE grown cubic (Al,Ga)N/GaN heterostructures
J. Appl. Phys. 89 (5), 2631 (2001)
Publications in 2000:
- M. Lisker, H. Witte, A. Krtschil, J. Christen, D.J. As, B. Schöttker, and K. Lischka
Enhancement of UV-sensitivity in GaN/GaAs heterostructures by Si-doping
Material Science Forum 338-342, 1591 (2000) - V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, D.J. As, D. Schikora, and K. Lischka
Resonant Raman scattering and the emission process in zincblende InxGa1-xN
Materials Science Forum 338-342, 1595 (2000) - D.J. As, R. Richter, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, K. Lischka
Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si
MRS Internet J N S R 5: U264-U269, Suppl. 1, 2000 - J.R.L. Fernandez, V.A. Chitta, E. Abramof et al.
Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature
MRS Internet J N S R 5: U191-U196, Suppl. 1, 2000 - D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka
Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates
phys. stat. sol. (a) 180, 369 (2000) - J.-C. Holst, A. Hoffmann, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, and K. Lischka
The origin of optical gain in cubic In,GaN grown by molecular beam epitaxy
Appl. Phys. Lett. 76, 2832 (2000) - G. Kaczmarczyk, A. Kaschner, S. Reich, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert, A. Hoffmann, and C. Thomsen
Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations
Appl. Phys. Lett. 76, 2122 (2000) - V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, L.M.R. Scolfaro, T. Frey, D.J. As, D. Schikora, and K. Lischka
Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering
Phys. Rev. Lett 84, 3666 (2000) - D.J. As, T. Frey, D. Schikora, and K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt
<link fileadmin physik arbeitsgruppen ag_as papers>Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si (001) substrates
Appl. Phys. Lett. 76, 1686 (2000) - R. Brenn, D.N. Jamieson, A. Cimmino, K.K. Lee, T. Frey, D.J. As, S. Prawer
Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM
Nuclear Instruments and Methods in Physics B 161, 435 (2000) - C. Wang, D.J.As, B. Buda, M. Lübbers, D. Schikora, J. Mimkes, and K. Lischka
Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction
J. Appl. Phys. 87, 3823 (2000) - R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D.J. As, and K. Lischka
Refractive index and gap energy of cubic InxGa1-xN
Appl. Phys. Lett. 76, 291 (2000) - D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes, and K. Lischka
Electroluminescence of a cubic GaN/GaAs (001) p-n junction
Appl. Phys. Lett. 76, 13 (2000) - D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg
Investigations of the Stranski-Krastanov growth of CdSe quantum dots
Appl. Phys. Lett. 76, 418 (2000)
Publications in 1999:
- E. Silveira, A. Tabata, J.R. Leite, R. Trentin, V. Lemos, T. Frey, D.J. As, D. Schikora, K. Lischka
Evidence of phase separation cubic InxGa1-xN epitaxial layers by resonant Raman scattering
Appl. Phys. Lett. 75, 3602 (1999) - L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A. Tabate, J.L.P. Castineira, and D.J. As
Relaxation effects on the negatively charged Mg impurity in zincblende GaN
phys. stat. sol. (b) 216, 541 (1999) - D.J. As and K. Lischka (invited paper)
Heteroepitaxy of doped and undoped cubic group III-nitrides
phys. stat. sol. (a) 176, 475 (1999) - T. Frey, D.J. As, D. Schikora, K. Lischka, J. Holst, A. Hoffmann
Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures
phys. stat. sol. (b) 216, 259 (1999) - R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. As, and K. Lischka
Determination of optical constants for cubic InxGa1-xN
phys. stat. sol. (b) 216, 265 (1999) - J. Holst, A. Hoffmann, I. Broser, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora, K. Lischka
The influence of structural properties on the mechanisms of optical amplification in cubic GaInN
phys. stat. sol. (b) 216, 471 (1999) - A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora, and K. Lischka
Raman scattering study of zinc blende InxGa1-xN alloys
phys. stat. sol. (b) 216, 769 (1999) - J. Portmann, C. Haug, R. Brenn, T. Frey, B. Schöttker, D.J. As
Ion-channeling studies of cubic GaN and InxGa1-xN on GaAs substrates
Nuclear Instruments and Methods in Physics Research B 155, 489 (1999) - A. Tabata, J.R. Leite, A.P. Lima, E. Silveira, V. Lemos, T. Frey, D.J. As., D. Schikora, and K. Lischka
Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
Appl. Phys. Lett. 75 (8), 1095 (1999) - R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, B. Schöttker, T. Frey , D.J. As, D. Schikora, K. Lischka
Time Resolved Photoluminescence of Cubic Mg Doped GaN
MRS Proc. Vol. 572, 225 (1999) - A. Tabata, A.P. Lima, J.R. Leite, V. Lemos, D. Schikora, B. Schöttker, U. Köhler, D.J. As, and K. Lischka
Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrates
Semicond. Sci. Technol. 14 (1999) 318-322 - M. Lisker, A. Krtschil, H. Witte, J. Christen, D.J. As, B. Schöttker, and K. Lischka
Electrical and photoelectrical characterization of deep defects in cubic GaN on GaAs
MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998
MRS Internet J. Nitride Semicond. Res. 4S1, U190-U195, G2.3 (1999) - J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D.J. As, D. Schikora, K. Lischka
Mechanisms of Optical Gain in Cubic GaN and InGaN
MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, Dezember 1998
MRS Internet J. Nitride Semicond. Res. 4S1, U80-U85, G3.14 (1999) - D.J. As, T. Simonsmeier, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, and K. Lischka
P- and n-type doping of MBE grown cubic GaN/GaAs epilayers
MRS Proc. Vol. 537 (1999), MRS Fall Meeting 98, Boston, December 1998
MRS Internet J. Nitride Semicond. Res. 4S1, U238-U243, G3.24 (1999) - J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka
Optical gain and stimulated emission of cleaved cubic gallium nitrite
Appl. Phys. Lett. 74, 1966 (1999) - R. Pässler, E. Griebl, H. Riepl, G. Lautner, S. Bauer, H. Preis, W. Gebhardt, B. Buda, D.J. As, D. Schikora, K. Lischka, K. Papagelis, and S. Ves
Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films
J. Appl. Phys. 86, 4403 (1999) - A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schöttker, T. Frey, D.J. As, and K. Lischka
Growth of cubic InN on InAs (001) by plasma assisted molecular beam epitaxy
J. Crystal Growth 201/202, 396 (1999) - Z.X. Liu, A.R. Goñi, K. Syassen, H. Siegle, C. Thomsen, B. Schöttker, D.J. As, and D. Schikora
<link fileadmin physik arbeitsgruppen ag_as papers>Pressure and temperature effects on optical transitions in cubic GaN
J. Appl. Phys. 86 (2), 929 (1999) - C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka
<link fileadmin physik arbeitsgruppen ag_as papers>Cathodoluminescence of homogeneous cubic GaN/GaAs (001) layers
Semicond. Sci. Techn. 14, 161 (1999) - U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn
<link fileadmin physik arbeitsgruppen ag_as papers>Optical constants of cubic GaN in the energy range of 1.5 to 3.7 eV
J. Appl. Phys. 85, 404 (1999) - A.P. Lima, T. Frey, U. Köhler, C. Wang, D.J. As, K. Lischka, D. Schikora
Surface irregularities of MBE grown cubic GaN layers
J. Crystal Growth 197, 31 (1999)
Publications in 1998:
- N. Puhlmann, I. Stolpe, H.U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, and K. Lischka:
Megagauss cyclotron resonance in cubic GaN layers
Proc. 24rd Int. Conf. on Physics of Semicond., Jerusalem, August 1998 (invited paper), ed. D. Gershoni, World Scientifique, Singapore 1998 - N. Puhlmann, I. Stolpe, H.-U. Müller, M. von Ortenberg, D. Schikora, D.J. As, B. Schöttker, K. Lischka:
Magneto-optical investigations on cubic GaN in high magnetic fields
Physica B 256-258, 659 (1998) - D.J. As (invited paper):
Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers
phys. stat. sol. (b) 210, 445 (1998) - D.J. As (invited paper):
Defect Related Optical and Electrical Properties of MBE Grown Cubic GaN Epilayers
Radiation Effects and Defects in Solids 146, 145 (1998) - D.J. As, T. Simonsmeier, B. Schöttker, T. Frey, and D. Schikora:
Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
Appl. Phys. Lett. 73, 1835-1837 (1998) - I. Loa, S. Gronemeyer, C. Thomsen, O. Ambacher, D. Schikora, and D.J. As:
Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN
J. Raman Spectroscopy 29, 291-295 (1998) - B. Buda, C. Wang, W. Wrede, O. Leifeld, D.J. As, D. Schikora, and K. Lischka:
The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence
Semicond. Sci. Technol. 13, 921-926 (1998) - J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, and K. Lischka:
Mechanisms of optical gain in cubic gallium nitrite
Appl. Phys. Lett. 72, 1439 (1998) - D.J. As, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
Depth resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers
MRS Proc. Vol. 482, 661 (1998) - C. Wang, D.J. As, B. Schöttker, D. Schikora, and K. Lischka:
Cathodoluminescence of Cubic GaN Epilayers
Materials Science Forum Vols. 264-268 (1998) pp. 1339-1342 - B. Schöttker, J. Kühler, D.J. As, D. Schikora, and K. Lischka
An Accurate Method to Determine the Growth Conditions During Molecular Beam Epitaxy of Cubic GaN
Materials Science Forum Vols. 264-268 (1998) pp. 1173-1176 - D.J. As, C. Wang, B. Schöttker, D. Schikora, K. Lischka:
Depth-resolved and excitation power dependent cathodoluminescence of MBE grown cubic GaN epilayers
Mat. Res. Soc. Symp. Proc. Vol. 482, pp. 661-666 (1998)
Publications in 1997:
- H. Siegle, A.R. Goni, C. Thomsen, C. Ulrich, K. Syassen, B. Schöttker, D.J. As, D. Schikora:
<link fileadmin physik arbeitsgruppen ag_as papers>High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
Mat. Res. Soc. Symp. Proc. Vol. 468, pp. 225-230 (1997) - D.J.As, A.Greiner, M.Lübbers, J.Mimkes, M.Hankeln, K.Lischka, D.Schikora:
Hall-effect measurements on stoichiometrically grown cubic GaN epilayers on GaAs substrates
Proc. 23th Int.Conf.on the Physics of Semiconductors, Berlin, Germany 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific Publ. Singapore,1997), vol. 1, p. 509 - D.J.As, A.Rüther, M.Lübbers, J.Mimkes, K.Lischka, D.Schikora:
P-type conductivity with a high hole mobility in cubic GaN/GaAs epilayers
Mat. Res. Soc. Symp. Proc. No. 449, pp. 615-620 (1997) - D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka:
The near band edge photoluminescence of cubic GaN epilayers
Appl. Phys. Lett. 70, 1311-1313 (1997) - D.Schikora, B. Schöttker, D.J. As, K.Lischka:
Epitaxial growth and properties of cubic group III-nitride layers
SPIE-Int. Soc. Opt. Eng. Proc. Vol. 2994, 60 (1997)
Publications in 1996:
- D.J. As, D.Schikora, A.Greiner, M.Lübbers, J.Mimkes, K.Lischka:
P- and n-type cubic GaN epilayers on GaAs
Phys. Rev. B 54, R11118 (1996) - B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora, K. Lischka:
Initial roughness and relaxation behaviour of MBE grown ZnSe/GaAs
Acta physica polonica A 90, 997 (1996) - D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, F. Henneberger:
<link fileadmin physik arbeitsgruppen ag_as papers>Epitaxial growth and optical transitions of cubic GaN films
Phys. Rev. B 54, R8381 (1996)
Publications in 1994:
- K. Weich, J. Hörer, E. Patzak, D.J. As, R. Eggemann, M. Möhrle:
Injection locked laser as wavelength converter and optical regenerator up to 10 Gbit/s
Conf.Dig.ECOC 94, Vol.2, WeB2.2, 643 (1994) - U. Feiste, D.J. As, A. Ehrhardt, M. Möhrle, D. Franke:
Investigations on the stability of an all-optically extracted clock at 18 GHz using a selfpulsating DFB-laser
Conf.Dig.ECOC 94, Vol.1, TuP.29, 487 (1994) - K. Weich, R. Eggemann, J. Hörer, D.J. As, M. Möhrle, E. Patzak:
10 Gbit/s all-optical decision with two section semiconductor lasers
Electronics Letters 30, 784 (1994) - K. Weich, E. Patzak, J. Hörer, D.J. As, R. Eggemann, M. Möhrle:
5 Gbit/s optical switching between two injection locked modes of a semiconductor laser
Tech.Dig.CLEO 94, Vol.8, CTuT4, 170 (1994) - K. Weich, J. Hörer, D.J. As, R. Eggemann, M. Möhrle, E. Patzak:
2.5 Gbit all-optical clocked decision and retiming circuit using bistable semiconductor lasers
Tech.Dig.OFC 94, Vol.4, WB5, 79 (1994) - U. Feiste, D.J. As, A. Ehrhardt:
18 GHz all-optical frequency locking and clock recovery using a selfpulsating two-section DFB-laser
Photonics Technology Letters 6, 106 (1994)
Publications in 1993:
- A.Ehrhardt, D.J. As, U. Feiste:
All optical clock extraction at 18 GHz by a selfpulsating two-section DFB-laser
Conf.Dig.ECOC 93, Vol.3, ThP12.9, 85 (1993) - B. Sartorius, M. Möhrle, D.J. As, J. Hörer, H. Venghaus, U. Feiste:
High frequency locking at 18 GHz in a selfpulsating DFB laser
Conf.Dig.ECOC 93, Vol.2, WeP8.2, 365 (1993) - G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler, D.J.As:
Enhancement of the in-plane effective mass of electrons in modulation doped InGaAs quantum wells due to confinement effects
Phys.Rev.B 48, 2328 (1993) - D.J. As, R.Eggemann, U. Feiste, M. Möhrle, E. Patzak, K. Weich:
Clock recovery based on a new type of selfpulstion in a 1.5 µm two-section InGaAsP-InP DFB laser
Electronics Letters 29, 141 (1993) - M. Maier, K. Köhler, A. Höpner, D.J. As:
Composition analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by deterimination of film thickness
J. Appl. Phys. 73, 3820 (1993) - Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
High resolution carrier temperature and lifetime topography of semiinsulating LEC GaAs using spatially and spectrally resolved photoluminescence
J. Appl. Phys. 73, 1430 (1993)
Publications in 1992:
- J.D. Ralston, I. Esquivias, S. Weiser, D.F.G. Gallagher, P.J. Tasker, E.C. Larkins, J. Rosenzweig, H.P. Zappe, J. Fleissner, D.J. As:
16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure
SPIE Vol. 1680 High-Speed Electronics and Optoelectronics, 127 (1992) - Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz:
Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 60, 1609 (1992) - K. Hingerl, W. Jantsch, P. Juza, M. Lang, H. Sitter, J. Lilja, M. Pessa, D.J. As, W. Rothemund:
Determination of acceptor binding energies in ZnSe
J. Crystal Growth 117, 341 (1992) - M. Maier, D.J. As, K. Köhler, A. Höpner:
Composition analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
in "Secondary Ion Mass Spectroscopy SIMS VIII", edited by A. Benninghoven, K.T.F. Jansen, J. Tümpner, H.W. Werner (J. Wiley & Sons, Chichester, 1992), p.873 - D.J.As, S. Korf, Z.M. Wang, J. Windscheif, K.H. Bachem, W. Jantz:
Low temperature photoluminescence topography of MOCVD grown InGaP, AlGaAs, and AlGaAs/GaAs single quantum wells
Semiconductor Sci. Technol. 7, A27 (1992) - Z.M. Wang, D.J. As, J. Windscheif, K.H. Bachem, W. Jantz:
Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 60, 1609 (1992)
Publications in 1991:
- H.P. Zappe, D.J. As:
Carrier transport in HEMTs analyzed by high-field electroluminescence
IEEE Electron Device Letters 12, 590 (1991) - H.P. Zappe, D.J. As:
Spectrum of hot-electron luminescence from high electron mobility transistors
Appl. Phys. Lett. 59, 2257 (1991) - Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers
Appl. Surf. Sci. 50, 228 (1991) - J.D. Ralston, M. Ramsteiner, B. Dischler, M. Maier, G. Brandt, P. Koidl, D.J. As:
Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum well structures
J. Appl. Phys. 70, 2195 (1991) - K. Hingerl, W. Jantsch, P. Juza, H. Sitter, D.J. As, W. Rothemund:
Characterization of MBE grown ZnSe epilayers doped with Arsenic
Crystal Properties and Preparation 32-34, 276 (1991)
Publications in 1990:
- K. Hingerl, J. Lilja, M. Toivonen, W. Jantsch, D.J. As, W. Rothemund, P. Juza, H. Sitter:
Electrical and optical properties of As and Li doped ZnSe films
SPIE Proceedings Vol. 1361, 943 (1990) - Z.M. Wang, J. Windscheif, D.J. As, W. Jantz:
Electron temperature and lifetime mapping of photoexcited carriers in semi-insulating LEC GaAs substrates by photoluminescence
Inst. Phys. Conf. Ser. No. 112, 190 (1990) - T. Schweizer, K. Köhler, P. Ganser, D.J. As, K.H. Bachem:
Investigation of the interface quality of GaAs/AlGaAs heterostructures
Superlattices and Microstructures 8, 179 (1990) - H.P. Zappe, D.J. As:
Mechanisms for the emission of visible light from GaAs field-effect transistors
Appl. Phys. Lett. 57, 2919 (1990) - K. Hingerl, H. Sitter, D.J. As, W. Rothemund:
Growth and Characterization of ZnSe grown on GaAs by Hot-Wall-Epitaxy
J. Crystal Growth 101, 180 (1990) - D.J. As, Th. Frey, W. Jantz, G. Kaufel, K. Köhler, W. Rothemund, T. Schweizer, H.P. Zappe:
Influences of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructrures
J. Electr. Mat. 19, 747 (1990)
Publications in 1988:
- D.J. As, P.W. Epperlein, P.W. Mooney:
Deep electron traps in GaAs/n-AlGaAs single quantum wells
J. Appl. Phys. 64, 2408 (1988) - D.J. As, P.W. Epperlein, P.W. Mooney:
DLTS measurements on MBE-grown narrow GaAs/-AlGaAs single quantum wells
Inst. Phys. Conf. Ser. No. 91, 561 (1988)
Publications in 1987:
- D.J. As, L. Palmetshofer:
Laser beam heating and high temperature luminescence of CdTe
J. Appl. Phys. 62, 369 (1987) - D.J. As, J.M. Langer:
Energy gap and the joint density of states temperature dependence in CdTe
Acta Physica Polonica A 71, 149 (1987) - D.J. As, L. Palmetshofer, J.M. Langer:
Laser annealing and photo-induced sublimation in compound semiconductors
Acta Physica Polonica A 71, 363 (1987)
Publications in 1985:
- D.J. As, L. Palmetshofer:
Laser annealing of defects in CdTe epitaxial layers
J. Crystal Growth 72, 246 (1985) - J. Schuller, D.J. As, W. Faschinger, K. Lischka, L. Palmetshofer, H. Sitter, W. Jantsch:
Thermal and laser annealing of intrinsic defects in CdTe epilayers
In Proc. 13th Int. Conf. on Defects in Semiconductors, L.C. Kimmerling and J.M. Parsey eds., Metallurgical Soc. of AIME (1985), p. 553
Publications in 1984:
- D.J. As, L. Palmetshofer, J. Schuller, K. Lischka:
CW-laser annealing of CdTe epitaxial layers
in: Laser Processing and Diagnostics, ed. D. Bäuerle, Springer Ser. Chem. Phys. 39, 64 (1984)
Nonscientific papers:
- D.J. As:
International Workshop on Nitride Semiconductors (IWN-2002) in Aachen, Germany, 22-25 July 2002
phys. stat. sol. (b) 233, 555 (2002)
