Die Präparation von Quantensystemen aus Halbleitern mit großer Energielücke sowie die Charakterisierung ihrer optischen und elektronischen Eigenschaften und ihre Anwendung in optoelektronischen und elektronischen Bauelementen bildet den Schwerpunkt der wissenschaftlichen Arbeiten.

Mit Molekularstrahlepitaxie (MBE) werden Schichtsysteme aus II-VI Verbindungshalbleitern und aus Gruppe III-Nitriden mit kubischer Kristallstruktur hergestellt. Diese Arbeiten führten u.a. zur Realisierung der weltweit ersten UV-LED auf der Basis von kubischen III-Nitriden, einem effizienten Verfahren für die p-Dotierung dieser Halbleiter und zur Klärung der Mechanismen, die zur selbstorganisierten Bildung von Quantum Dots in II-VI und c-III-Nitriden führen. Die Epitaxie wird in zwei MBE-Apparaturen durchgeführt, die mit Vorkammern zur Substratpräparation ausgestattet sind. Quantitative Elektronenbeugung mit Submonolagenauflösung wird zur Kontrolle und Steuerung der Wachstumsprozesse und bei Experimenten zur selbstorganisierten Bildung von Nanoclustern eingesetzt. Vor kurzem gelang erstmalig die Messung der Röntgenbeugung an wachsenden Epitaxieschichten mit einer am Lehrstuhl entwickelten und derzeit zum Patent angemeldeten Anlage. Wesentlich dabei ist, dass die Anlage mit einer konventionellen Röntgenquelle ausgestattet ist und somit in jedem Labor eingesetzt werden kann. Die optische Charakterisierung der Schichtsysteme erfolgt mit Photolumineszenz. Die Kathodolumineszenz von Nanostrukturen wird in einem Rasterelektronenmikroskop mit Tieftemperatur-Probenbühne gemessen. Für die Untersuchung von Mikroresonatoren auf Halbleiterbasis steht ein Reflexionsmessplatz zur Verfügung. Die Dichte und Beweglichkeit der elektrischen Ladungsträger in den Halbleiterschichten wird mit Halleffekt aus CV-Messungen bestimmt.

2011:

• C. Mietze, E.A. DeCuir Jr.; M.O. Manasreh, K. Lischka, D.J. As
  "Intrasubband transitions in cubic AlN/GaN superlattices for detectors from near to far infrared"
  phys. stat. sol. (c), 8, 1204-1207 (2011), DOI: 10.1002/pssc.201000838

• A. Pawlis, T. Berstermann, C. Brüggemann, M. Brombeck, D. Dunker, D.R. Yakovlev, N.A. Gippius, K. Lischka, M. Bayer
  "Exciton states in shallow ZnSe/(Zn,Mg)Se quantum wells: Interaction of confined and continuum electron and hole states"
  Phys. Rev. B, 83, 115302 (2011), DOI: 10.1103

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, D.J. As
  "Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation"
  J. Crystal Growth 323, 286-289 (2011), DOI: 10.1016/j.jcrysgro.2010.12.043

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  "Molecular beam epitaxy based growth of cubic GaN quantum dots"
  phys. stat. sol (c) 8, 1495 (2011), DOI: 10.1002/pssc.201000904  

• R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.K.N. Lindner, K. Lischka, D.J. As
  "Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates"
  J. Crystal Growth 323, 84-87 (2011), DOI: 10.1016/j.jcrysgro.2010.12.042   

• A. Zado, E. Tschumak, J.W. Gerlach, K. Lischka, D.J. As
  "Carbon as an acceptor in cubic GaN/3C-SiC"
   J. Crystal Growth 323, 88-90 (2011),  DOI: 10.1016/j.jcrysgro.2010.12.044
  

• V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora
  "In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy"
  Semiconductor Science and Technology 26 (2011) 10523, DOI: 10.1088/0268-1242/26/10/105023
  
  
• C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka, and D.J. As
  "Band offsets in cubic GaN/AIN superlattices"
  Phys. Rev. B 83, (2011) 195301, DOI: 10.1103/PhysRevB.83.195301
  
  
• J.H. Buss, J. Rudolph, T. Schupp, D.J. As, K. Lischka, and D. Hägele
  "Long room-temperature electron spin lifetimes in bulk cubic GaN"
  Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, Proc. of SPIE, Vol. 7937 (2011) 793711, DOI: 10.1117/12.873395

2010:

• J. H. Buß, J. Rudolph, T. Schupp, D.J. As, K. Lischka, and D. Hägele
  "Long room-temperature electron spin lifetimes in highly doped cubic GaN"
  Appl. Phys. Lett 97, 062101 (2010)

• M. Rashad, M. Paluga, A. Pawlis, K. Lischka, D. Schikora, M.V. Artemyev, and U. Woggon
  "MBE overgrowth of ex-situ prepa red CdSe colloidal nanocrystals"
  phys. stat. sol. (c) 7, 1523 (2010)

• M. Panfilova, A. Pawlis, A. Shchekin, S. Lemeshko, and K. Lischka
  "Investigations of strain in ZnMgSe/ZnSe microdisks by means of micro-Raman imaging"
  phys. stat. sol. (c) 7, 1675 (2010)

• E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, and D. Schikora
  "Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers"
  Semiconductor Sci. Technol. 25, 075003 (2010)

• E.M. Larramendi, K. Gutiérrez Z-B, C. Arens, U. Woggon, D. Schikora, and K. Lischka
  "Growth of ZnSe_(1-x)Te_x epilayers by isothermal closed space sublimation"
  J. Appl. Phys. 107, 103510 (2010)

• E.A. DeCuir, M.O. Manasreh, K. Lischka, and D.J. As
  "Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC"
  phys. stat. sol. (c) 7, No. 1, 64-67 (2010)

• A. Zado, E. Tschumak, K. Lischka, and D.J. As
  "Electrical characterization of an interface n-type conduction channel in cubic AlGaN/GaN heterostructures"
  phys. stat. sol. (c) 7, No. 1, 52–55 (2010)
  

• T. Schupp, G. Rossbach, R. Goldhahn, K. Lischka, and D.J. As
  "Growth of atomically smooth cubic AlN by molecular beam epitaxy"
  phys. stat. sol. (c) 7, No. 1, 17–20 (2010)

• T. Schupp, K. Lischka, and D.J. As
  "MBE growth of atomically smooth non-polar cubic AIN"
  J. Crystal Growth 312, 1500-1504 (2010)

• E. Tschumak, J.K.N. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and D.J. As
  "Nonpolar cubic AlGaN/GaN HFETs grown by MBE on Ar⁺ implanted  3C-SiC (001)"
  phys. stat. sol. (c) Vol. 7, No. 1, 104-107 (2010)

•  T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, N. Esser, C. Cobet, K. Lischka, and D.J. As
  "MBE growth of cubic AlN on 3C-SiC substrate"
  phys. stat. solidi (a) 207, No. 6, 1365-1368 (2010)

• D.J. As, H. Pöttgen, E. Tschumak, and K. Lischka
  "Electronic properties of nonpolar cubic GaN MOS structures"
  phys. stat. sol. (c) (2010) published online 26 May 2010

• D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, K. Lischka
  "Cubic AlGaN/GaN hetero-field effect transistors with normally-on and normally-off operation"
  MRS Symp. Proc. Vol. 12020, 104-108 (2010)

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  "Droplet epitaxy of zinc-blende GaN quantum dots"
  Journal of Crystal Growth 312, 3235-3237 (2010)

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  "Growth of cubic GaN quantum dots"
  "AIP Conference Proc. 1292, 165 (2010)

• A. Zado, E. Tschumak, J.W. Gerlach, K. Lischka, and D.J. As
  "Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr₄"
  AIP Conference Proc. 1292, 181 (2010)

• C. Mietze, E.A. De Cuir, M.O. Manasreh, K. Lischka, and D.J. As
  "Band offset between cubic GaN and AIN from intra- and interband spectroscopy of superlattices"
  AIP Conference Proc. 1292, 169 (2010)
  

• R. Kudrawiec, E. Tschumak, J. Misiewicz, and D.J. As
  "Contactless electro-reflectance study of Fermi-level pinning at the surface of cubic GaN"
  Appl. Phys. Lett. 96, 241904 (2010)

• E. Tschumak, R. Granzner, J.K.N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and D.J. As
  "Nonpolar cubic AlGaN"/GaN heterojunction field-effect transistor on Ar⁺ implanted 3C-SiC (001)"
  Appl. Phys. Lett. 96, 253501 (2010)

• M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A. Zrenner
  "Photocurrent-spectroscopy of CdSe quantum dot photodiodes"
  Physica E 42, 2521 (2010)

• M. Rashad, A. Pawlis, D. Schikora, K. Lischka, M.V. Artemyev, and U. Woggon
  "Excitonic emisison of colloidal nano-crystals embedded in molecular beam epitaxy grown ZnSe"
  Journal of Physics: Conference Series (JPCS), accepted

• K. De Greve, S.M. Clark, D. Sleiter, K. Sanaka, T.D. Ladd, M. Panfilova, A. Pawlis, K. Lischka, and Y. Yamamoto
  "Photon antibunching and magnetospectroscopy of a single fluorine donor in ZnSe"
  Appl. Phys. Lett. 97, 241913 (2010)

• E. Tschumak (invited paper)
  "Cubic AlGaN/GaN hetero-junction field-effect transistors with normally-on and normally-off characteristics"
  AIP Conference Proc. 1292, 159 (2010)

2009:

• K. Sanaka, A. Pawlis, T.D. Ladd, K. Lischka, and Y. Yamamoto
  Indistinguishable photons from independent semiconductor nanostructures
  Phys. Rev. Lett. 103, 053601 (2009)

• M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, and D.J. As
  Dielectric function of zinc-blende AIN from 1 to 20 eV: Band gap and van Hove singularities
  J. Appl. Phys. 106, 076104 (2009)

• K. Lorenz, I.S. Roqan, N. Franco, K.P. O'Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, and M. Panfilova
  Europium doping of zinblende GaN by ion implantation
  J. App. Phys. 105, 113507 (2009)

• E. Tschumak, K. Tonisch, J. Pezoldt, D.J. As:
  "Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates"
  Proc. ECSCRM-2008 in Materials Science Forum, vols. 615-617, 943-946 (2009)

• D.J. As, E. Tschumak, H. Pöttgen, O. Kasdorf, J.W. Gerlach, H. Karl, and K. Lischka:
  "Carbon doping on non-polar cubic GaN by CBr₄"
  J. Crystal Growth, vol. 311, 2039-2041 (2009)
  
• D.J. As:
  "Cubic group III-nitride based nano-structures – basics and applications in optoelectronics"
  Microelectronics Journal, vol. 40, 204-209 (2009)

• E. Tschumak, M.P.F. de Godoy, D.J. As, K. Lischka:
  "Insulating substrates for cubic GaN-based HFETS"
  Microelectronics Journal, vol. 40, 367-369 (2009) 

• A. Pawlis, M. Panfilova, K. Sanaka, T.D. Ladd, D.J. As , K. Lischka, Y. Yamamoto:
  "Low-threshold ZnSe microdisc laser based on fluorine impurity bound-exciton transitions"
  Microelectronics Journal, vol. 40, 256-258 (2009)

• S. Michaelis de Vasconcellos, A. Pawlis, C. Arens, M. Panfilova, A. Zrenner, D. Schikora, K. Lischka:
  "Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes"
  Microelectronics Journal, vol. 40, 215-217 (2009)

• A. Kabir, M. Panfilova, A. Pawlis, H.P. Wagner, K. Lischka:
  "Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells"
  Microelectronics Journal, vol. 40, 303-305 (2009)

• M. Panfilova, A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka:
  "Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs"
  Microelectronics Journal, vol. 40, 221-223 (2009)

• D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka:
  "Schottky and ohmic contacts on non-polar cubic GaN epilayers"
  MRS. Symp. Proc. Vol. 1108, A01-02 (2009)

• M. Panfilova, A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka:
  "Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs"
  Microelectronics Journal, vol. 40, 221-223 (2009)

• D. Schikora, G. Litscher:
  "Laserneedles – a new painfree acupuncture method for children in Integrative Medicine for Children"
  M. Lou (Ed), Elsevier Publisher, London, 2009

2008:

• E.A. DeCuir, Jr., M.O. Manasreh, E. Tschumak, J. Schörmann, D.J. As, and K. Lischka:
  "Cubic GaN/AlN multiple quantum well photodetector"
  Appl. Phys. Lett. 92, 201910 (2008)

• P. Schley, R. Goldhahn, C. Napierala, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke:
  "Dielectric function of cubic InN from mid-infrared to the visible spetral range"
  Semiconductor Science and Technol. 23,055001(2008)

• E.A. DeCuir, Jr., E. Fred, O. Manasreh, J. Schörmann, D.J. As, and K. Lischka:
  "Near infrared intersubband absorption in cubic GaN/AlN superlattices"
  MRS. Symp. Proc. Vol. 1055E, GG13.2 (2008)tobias-wecker@gmx.net

• D.J. As, S. Potthast, J. Schörmann, E. Tschumak, M.F. de Godoy, K. Lischka:
  "Molecular beam epitaxy of nonpolar cubic Al_xGa_1-xN/GaN epilayers"
  MRS. Symp. Proc.Vol. 1040E, Q4.2 (2008)

• P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, J. Schörmann, D.J. As, K. Lischka, H. Lu, W.J. Schaff:
  "Valence band density of state of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations"
  Phys. Rev. B 77, 115213 (2008)

• I.S. Roqan, K.P. O´Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, E. Alves, D.J. As, M. Panfilova, I.M. Watson:
  "Luminescence of Eu-implanted zincblende and wurtzite GaN"
  phys. stat. sol. (b) 245 (1), 170 (2008)

• A. Pawlis, M. Panfilova, D.J. As, and K. Lischka, K. Sanaka, T.D. Ladd, and Y. Yamamoto:
  "Lasing of donor-bound excitons in ZnSe microdisks"
   Phys. Rev. B 77, 153304 (2008)

• P. Schley, C. Napierala, R.Goldhahn, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thinke, F. Fuchs, and F. Bechstedt:
  "Band gap an effective electron mass of cubic InN"
  phys. stat. sol. (c), No. 6, 2342-2344 (2008)

• D.J. As, J. Schörmann, E. Tschumak, K. Lischka, E.A. De Cuir, and M.O. Manasreh:
  "Growth of nonpolar cubic GaN/AIN multiple quantum wells with intersubband transitions for 1.5 µm applications"
  phys. Stat. sol. (c) 5, No. 6, 2092-2095 (2008)

• V. Haxsen, D. Schikora, U. Sommer, A. Remppis, J. Greten, C. Kasperk:
  "Relevance of laser irradiance threhold in the induction of alkaline phosphatase in human osteoblast cultures"
  Lasers Med. Sci. 23, No. 4, 381-384 (2008)

• W. Banzer, M. Hübscher, D. Schikora:
  "Laserneedle therapy for spontaneous osteonecrosis of the knee"
  Photomedicine and Laser Surgery 4, 301-306 (2008)

• D.Schikora:
  "Laserneedle Acupuncture: A critical review and recent results"
  Medical Acupuncture 20, No. 1, 37-42 (2008)

• D. Schikora, G. Litscher:
  "Laserneedles – a new painfree acupuncture method for children in Integrative Medicine for Children"
  M. Lou (Ed), Elsevier Publisher, London, 2008
  

2007:

• R. Goldhahn, P. Schley, J. Schörmann, D.J. As, K. Lischka, F. Fuchs, F. Bechstedt, C. Cobet, N. Esser:
  "Dielectric function and band structure of cubic InN"
  Bessy (Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H) Annual Report 2006, 529 (2007)

• J. Schörmann, D.J. As, K. Lischka:
  "MBE Growth of cubic InN"
  MRS Symp. Proc. Vol. 955E, I8.3 (2007)

• S.F. Li, J. Schörmann, D.J. As, K. Lischka:
  "Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells"
  Appl. Phys. Lett. 90, 071903 (2007)

• C. Simbrunner, K. Schmidegg, A. Bonanni, A. Kharchenko, J. Bethke, J.Woitok, K. Lischka, and H. Sitter:
  "In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm"
  J. Cryst. Growth 298, 243 (2007)

• J. Schörmann, S. Potthast, D.J. As, K. Lischka:
  "In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction"
  Appl. Phys. Lett. 90, 041918 (2007)

• D. J. As, M. Schnietz, J. Schörmann, S. Potthast, J.W. Gerlach, J. Vogt und K. Lischka:
  "MBE growth of cubic Al_xIn_1-xN and Al_xGa_yIn_1-x-yN lattice matched to GaN"
  phys. stat. sol. (c) 4, no. 7, 2318-2321 (2007)

• D.J. As, J. Schörmann, K. Lischka, E. A. De Cuir, Jr., and M.O. Manasreh:
  "Growth of nonpolar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 µm applications"
  ICNS-2007, Las Vegas, September 2007 (accepted)

• P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt:
  "Optical properties of cubic InN from mid-IR into the VUV range"
  ICNS-2007, Las Vegas, September 2007 (accepted)

• E.A. De Cuir, E. Fred, O. Manasreh, J. Schörmann, D.J. As, and K. Lischka:
  "Near infrared intersubband absorption in cubic GaN/AIN superlattices"
  MRS Symposium Proc. Vol. 1055E, GG13.2 (2007)

• P.D.C. King, T.D. Veal, and C.F. McConville, F. Fuchs, J. Furthmüller, and F. Bechstedt, P. Schley, and R. Goldhahn, J. Schörmann, D.J. As, and K. Lischka, D. Muto, H. Naoi, and Y. Nanishi, Hai Lu and W.J. Schaff:
  "Universality of electron accumulation at wurtzite c-and a-plane and zincblende InN surfaces"
  Appl. Phys. Lett. 91, 092101 (2007)

• D.J. As, S. Potthast, J. Schörmann, E. Tschumak, M. F. de Godoy, and K. Lischka:
  "Molecular beam epitaxy of nonpolar cubic Al_xGa_1-xN/GaN epilayers"
  MRS Symposium Proc. Vol. 1040E, Q4.2 (2007)

• E.A. DeCuir Jr., E. Fred, M.O. Manasreh, J. Schörmann, D.J. As, K. Lischka:
  "Near-infrared intersubband absorption in non-polar cubic GaN/AlN superlattices"
  Appl. Phys. Lett. 91, 041911 (2007)

• F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka:
  "Magnetic and structural properties of Gd-implanted zinc-blende GaN"
  Appl. Phys. Lett. 90, 262505 (2007)

• M. Hübscher, L. Vogt, D. Schikora, W. Banzer:
  "Laser needle acupuncture at Neiguan (PC6) does not mediate heart rate variability in young, healthy men"
  Photomed. Laser Surg. 25, No. 1, 21-25 (2007)

• C.M. Siedentopf, A. Ischebeck, I.A. Haala, F.M. Mottaghy, D. Schikora, M. Verius, F. Koppelstaetter, W. Buchberger, A. Schlager, S.R. Felber, S.M. Golaszewski: "Neural correlates of transmeatal cochlear laser (TCL) stimulation in healthy human subjects"
  Neurosci. Lett. 411, No. 3, 189-193 (2007)

2006:

• D.G. Pacheco-Salazar, J.R. Leite, F. Cerdeira, E.A. Meneses, S.F. Li, D.J. As and K. Lischka:
  "Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate"
  Semicond. Sci. Technol. 21 (2006) 846-851

• D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
  "Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates"
  Microelectronic Engineering 83 (2006) 34-36

• D.J. As, S. Potthast, J. Fernandez, J. Schörmann, and K. Lischka:
  "Ni Schottky diodes on cubic GaN"
  Appl. Phys. Lett. 88, 1521112 (2006)

• Ch. Arens, N. Rousseau, D. Schikora, K. Lischka, O. Schöps, E. Herz, U. Woggon, D. Litvinov, D. Gerthsen, and M.V. Artemyev:
  "Colloidal nanocrystals integrated in epitaxial nanostructures: structural and optical properties
  phys. stat. sol. (c) 3, No. 4 (2006) 861-864

• S. Potthast, J. Schörmann, J. Fernandez, D.J. As, K. Lischka, H. Nagasawa, M. Abe:
  "Two-dimensional electron gas in cubic Al_xGa_1-xN/GaN heterostructures"
  phys. stat. sol. (c) 3, No. 6 (2006) 2091

• J. Schörmann, S. Potthast, M. Schnietz, S.F. Li, D.J. As, and K. Lischka:
  "Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates"
  phys. stat. sol. (c) 3, No. 6 (2006) 1604

• C. Simbrunner, K. Schmidegg, A. Bonanni, A. Kharchenko, J. Bethke, J. Woitok, K. Lischka, and H. Sitter:
  "In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray diffraction"
  phys. stat. sol. (a) 203, No. 7 (2006) 1704-1707

• D.J. As, S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, M. Abe:
  "Mechanism of current leakage in Ni Schottky diodes on cubic GaN and AlxGa1-xN epilayers"
  MRS Symp. Proc. Vol. 892, 283 FF 13.4.1 (2006)

• D.J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, H. Nagasawa, M. Abe:
  "Molecular beam epitaxy of cubic group III-Nitrides on free-standing 3C-SiC substrates"
  Proc. ICSCRM-2005 Pittsburgh, PA/USA, Sept. 2005, abstract no. 3250
  Materials Science Forum 527-529, 1489 (2006)

• M. Abe, H. Nagasawa, S. Potthast, J. Fernandez, J. Schörmann, D.J. As, and K. Lischka:
  "Cubic GaN/AlGaN HEMTs von 3C-SiC substrate for normally-off operation"
  IEICE Trans. Electron. E89-C, No. 7 (2006) 1057-1063

• A. Pawlis, K. Sanaka, S. Götzinger, Y. Yamamoto, and K. Lischka:
  "Investigation of excitons bound to fluorine donors in ZnSe"
  Semicon. Sci. Technol. 21 (2006) 1412-1415

• J. Schörmann, S. Potthast, D.J. As, and K. Lischka:
  "Near ultraviolet emission from nonpolar cubic Al_xGa_1-xN/GaN quantum wells"
  Appl. Phys. Lett. 89 (2006) 131910

• J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F. Li, W. Löffler, M. Hetterich, H. Kalt:
  "Molecular beam epitaxy of phase pure cubic InN"
  Appl. Phys. Lett. 89, 261903 (2006)G. Litscher, D. Schikora: Laserneedle-Acupuncture. Science and Practice, Koreanische Ausgabe 2006

• H. Potente, S. Preuß, Th. Preuß:
  "A New Approach for Temperature Measurement inside an Injection Molding Tool"
  Antec 2006, Charlotte/NC, May 2006, Paper 103176

• S. Preuß, D. Potthoff, Th. Preuß, K. Lischka:
  "LED encapsulation - a new approach of rear light design"
  Proc. SPIE 6198, 61980I (2006)

• W. Banzer, M. Hübscher, M. Seib, D. Schikora, L. Vogt:
  "Short-time effects of laser needle stimulation on the peripheral microcirculation assessed by laser Doppler spectroscopy and near-infrared spectroscopy"
  Photomed. Laser Surg. 24, No. 5, 575-580 (2006)

• G. Litscher, Lu Wang, G. Schwarz, D. Schikora:
  „Lasernadelstimulation unter Normalkonditionen und Tinnitus“
  Schweiz. Zeitschrift für Ganzheitsmedizin 18, 29 – 34 (2006)

• G. Litscher, D. Schikora:
  Laserneedle-Acupuncture. Science and Practice, Koreanische Ausgabe 2006

2005:

• A. Kharchenko, K. Lischka, K. Schmidegg, H. Sitter, J. Bethke, and J. Woitok:
  In-situ and real-time characterization of MOCVD growth by high resolution X-ray diffraction
  Rev. Sci. Instrum. 76, No. 3, 033101-1 (2005)

• U. Woggon, E. Herz, O. Schöps, M.V. Artemyev, C. Arens, N. Rousseau, D. Schikora, K. Lischka, D. Litvinov, D. Gerthsen:
  Hybrid epitaxial-colloidal semiconductor nanostructures
  Nano Letters 5 (3), 483-490 (2005)

• Shunfeng Li, J. Schörmann, A. Pawlis, D.J. As, K. Lischka:
  Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs
  Microelectronics Journal 36, 963-968 (2005)

• H. Przybylinska, G. Kocher, W. Jantsch, D.J. As, and K. Lischka:
  Photoconductivity study of Mg and C acceptors in cubic GaN
  AIP Conf. Proc. 772 (2005) 253

• R. Goldhahn, C. Buchheim, V. Lebedev, V. Cimalla, O. Ambacher, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, S. Potthast, and D.J. As:
  Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN
  BESSY (Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H.) Annual Report 2005, ed. K. Godehusen, p. 206

• G. Litscher, L. Wang, G. Schwarz, D. Schikora
  Increases of intracranial pressure and changes of blood flow velocity due to acupressure, needle and laser needle acupuncture
  Forschung Komplementarmedizin Klasse Naturheilkunde 12, No. 4, 190 - 195 (2005)

• C. Siedentopf, I. Haala, F. Koppelstätter, M. Verius, S. Golasziewski, D. Schikora, S. Felber, A. Schlager:
  Placebo-kontrollierte, Computer-gesteuerte Doppelblind-Untersuchung – neue Ansätze für die Akupunktur Grundlagenforschung
  Deutsche Zeitschrift für Akupunktur 48, Nr. 1, 18 – 23 (2005)

• G. Litscher, D. Schikora:
  Laserneedle-Acupuncture. Science and Practice
  Pabst Science Publishers, Lengerich Berlin Bremen 2005

2004:

• J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, J.A.N.T. Soares, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler, D.G.P. Salazar, D. Schikora, K. Lischka:
  "Near band-edge optical properties of cubic GaN with and without carbon doping"
  Microelectronics Journal 35, 73 (2004)

• D.J. As, D.G. Pacheco-Salazar, S. Potthast, K. Lischka:
  "Electrical and optical properties of carbon doped cubic GaN epilayers grown under extreme Ga excess"
  MRS Symp. Proc. Vol. 798, Y8.2 (2004)

• A. Pawlis, A. Kharchenko, O. Husberg, K. Lischka and D. Schikora:
  "Preparation and properties of ZnSe/(Zn,Cd)Se multi-quantum-well microcavities for room temperature polariton emission"
   J. Phys.: Condensed Matter 16, S3689-S3694 (2004)

• I.C. Robin, R. André, Le Si Dang, H. Mariette, S. Tatarenko, J.-M. Gérard, K. Kheng, F. Tinjod, M. Bartels, K. Lischka, D. Schikora:
  "How to avoid non-radiative escape of excitons from quantum dots"
  phys. stat. sol. (b), Vol. 241, 542-545 (2004)

• A. Pawlis, D.J. As, D. Schikora, J. Schörmann, and K. Lischka:
  "Photonic devices based on wide gap semiconductors for room temperature polariton emission"
  phys. stat. sol. (c), vol. 1, no. S2, S202-S209 (2004)

• A. Bonanni, K. Schmidegg, A. Montagne Ramil, A. Kharchenko, J. Bethke, K. Lischka, and H. Sitter:
  "On-line growth control of MOCVD deposited GaN and related ternary compounds via spectroscopic ellipsometry and X-ray diffraction"
  phys. stat. sol. (a) 201, no. 10, 2259-2264 (2004)

• A. Montaigne Ramil, K. Schmidegg, A. Bonanni, H. Sitter, D. Stifter, Li Shunfeng, D.J. As, K. Lischka:
  "In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic GaN(001)"
  Thin Solid Films 455 - 456, 684-687 (2004)

• V.A. Chitta, J.A.H. Coaquira, J.R.L. Fernandez, C.A. Duarte, J.R. Leite, D. Schikora, D.J. As, K. Lischka, E. Abramof:
  "Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn⁺ ions"
  Appl. Phys. Lett. 85, no. 17, 3777-3779 (2004)

• M. Abe, H. Nagasawa, D.J. As, and K. Lischka:
  "Future propect of cubic GaN/AlGaN HEMT Technology"
  Proc. 13^th Meeting on SiC and Related Wide Bandgap Semiconductors, Nagoya/Japan, October 2004, paper P-69

• K. Schmidegg, A. Kharchenko, A. Bonanni, H. Sitter, J. Bethke, and K. Lischka:
  "Characterization of metalorganic chemical vapor deposition growth of cubic GaN by in situ x-ray diffraction"
  J. Vac. Sci. Technol. B 22(4), 2165-2168 (2004)

• R. Goldhahn, C. Buchheim, V. Lebedev, V. Cimalla, O. Ambacher, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, S. Potthast, and D.J. As:
  Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN
  BESSY (Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H.) Annual Report 2005, ed. K. Godehusen, p. 206

• S.F. Li, J. Schörmann, A. Pawlis, D.J. As, and Klaus Lischka:
  "Cubic InGaN/GaN multiple quantum wells and AlGaN/GaN Bragg reflectors for green resonant cavity LED"
  IEEE Proceedings SIMC-XIII, Bejing, p.61 (2004)

• S.F. Li, D.J. As, K. Lischka, D.G. Pacheco-Salazar, L.M.R. Scolfaro, J.R. Leite, F. Cerdeira, E.A. Meneses:
  "Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells"
  MRS Symp., Proc. Vol. 831, E8.15 (2004)

• D. Schikora:
  "Lasernadeln für die Akupunktur"
  Schweizerische Zeitschrift für Ganzheitsmedizin 16, 304 – 308 (2004)

• G. Litscher, W. Nemetz, J. Smolle, g. Schwarz, D. Schikora, S. Uranüs:
  Histological investigation of the micromorphological effects of the application of a laser needle--results of an animal experiment"
  Biomed Tech (Berl) 49, No. 1-2, 2 – 5 (2004)

• G. Litscher, L. Wang, E. Huber, D. Schikora, G. Schwarz:
  "Quantification of gender specific thermal sensory and pain threshold before and after laser needle stimulation"
  Biomed Tech (Berl) 49, No. 5, 106 – 110 (2004)

• G. Litscher, D. Rachbauer, S. Ropele, L. Wang, D. Schikora, F. Fazekas, F. Ebner:
  "Acupuncture using laser needles modulates brain function: first evidence from functional transcranial Doppler sonography and functional magnetic resonance imaging"
  Lasers Med Sci. 19, No. 1, 6 – 11 (2004)

• D. Schikora, G. Litscher:
  "Effects of acupressure, manual acupuncture and Laserneedle® acupuncture on EEG bispectral index  (BIS) and spectral edge frequency (SEF) in healthy volunteers"
  Europ. J. Anaesthesiol. 21, 13 – 19 (2004)

• G. Litscher, L. Wang, D. Schikora, D. Rachbauer, G. Schwarz, A. Schöpfer, S. Ropele, E. Huber:
  "Biological effects of painless laserneedle acupuncture"
  Medical Acupuncture 16, No. 1, 24 – 29 (2004)

• G. Litscher, D. Rachbauer, S. Ropele., L. Wang., D. Schikora:
  "Die schmerzfreie Lasernadelakupunktur moduliert die Gehirnaktivität: Erste Nachweise mit funktioneller transkranieller Dopplersonographie (fTCD)
  und funktionellem Magnetresonanzimaging (fMRI)"
  Schmerz & Akupunktur 1, 4 – 11 (2004)
  
  

  2003:

• D. J. As, S. Potthast, U. Köhler, A. Khartchenko and K. Lischka:
  "Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates"
  MRS Symp. Proc. Vol. 743 L5.4 (2003)

• J.R.L. Fernandez, O.C. Noriega, J.A.N.T. Soares, F. Cerdeira, E.A. Meneses, J.R. Leite, D.J. As, D. Schikora, and K. Lischka:
  "Near band-edge optical properties of cubic GaN"
  Solid State Communications 125, No. 3-4, 205 (2003)

• A. Pawlis, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora:
  "Large room temperature Rabi-splitting in II-VI semiconductor microcavity quantum structures"
  Microelectronics Journal 34, 439-442 (2003)

• K. Lischka:
  "Light emission from cubic InGan nanostructures"
  Microelectronics Journal 34, 427-433 (2003)

• D.J. As, D. Schikora, K. Lischka:
  "Molecular beam epitaxy of cubic III-nitrides on GaAs substrates"
  phys. stat. sol. (c) 0, no. 6, 1607-1626 (2003) (invited)

• A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D.J. As, U. Köhler, A. Dadgar, Y. Saito, Y. Nanishi,
  M.R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner:
  "Phonons and Free-carrier Properties of Binary, Ternary, and Quaternary Group-III Nitride Layers Measured by Infrared Spectroscopic Ellipsometry"
  phys. stat. sol. (c) 0, no. 6, 1750 (2003)

• O.C. Noriega, A. Tabata, J.A.N.T. Soares, S.C.P. Rodrigues, J.R. Leite, E. Ribeiro, J.R.L. Fernandez, E.A. Meneses, F. Cerdeira, D.J. As, D. Schikora, and K. Lischka:
  "Photoreflectance studies of optical transitions in cubic GaN grown on GaAs (001) substrates"
  Journal of Crystal Growth 252, 208-212 (2003)

• L.K. Teles, L.G. Ferreira, J.R. Leite, L. M.R. Scolfaro, A. Kharchenko, O. Husberg, D.J. As, D. Schikora, and K. Lischka:
  "Strain-induced ordering in In_xGa_1-xN alloys"
  Appl. Phys. Lett. 82, 4274-4276 (2003)

• J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, J.A.N.T. Soares, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Köhler,
  S. Potthast, and D.G. Pacheco Salazar:
  "Optical and x-ray studies on the incorporation of carbon as a dopant in cubic GaN"
  Phys. Rev. B 68, 155204 (2003)

• T. Makino, R. André, J.-M. Gérard, R. Romestain, Le Si Dang, M. Bartels, K. Lischka, and D. Schikora:
  "Single quantum dot spectroscopy of CdSe/ZnSe grown on vicinal GaAs structures"
  Appl. Phys. Lett. 82, 2227 (2003)

• T. Makino, R. André, J.-M. Gérard, R. Romestain, Le Si Dang, M. Bartels, K. Lischka, and D. Schikora:
  "Effect of growth conditions on optical properties of CdSe/ZnSe single quantum dots"
  Physica E 17, 97 (2003)

• D.J. As, D.G. Pacheco Salazar, S. Potthast, and K. Lischka
  Carbon doping of cubic GaN under gallium-rich growth conditions
  phys. stat. sol. (c) 0, no. 7, 2537-2540 (2003)

• D.J. As:
  "Growth and characterization of MBE-grown cubic GaN, In_xGa_1-xN and Al_xGa_1-yN quantum wells"
   in "III-Nitride Semiconductor Materials: Growth", eds. M.O. Manasreh and I.T. Ferguson,
  in series "Optoelectronic Properties of Semiconductors and Superlattices",
  series editor M.O. Manasreh (Taylor & Francis, New York) 19, chapter 9, 323-450 (2003) (invited)

• G. Litscher, D. Schikora:
  "Near-infrared spectroscopy for objectifying cerebral effects of needle and laserneedle acupuncture"
  Internet Journal Neuromonitoring 2, No. 2 (2003)